TI TLV2211IDBV

TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
D
D
D
D
D
D
D
D
DBV PACKAGE
(TOP VIEW)
Output Swing Includes Both Supply Rails
Low Noise . . . 21 nV/√Hz Typ at f = 1 kHz
Low Input Bias Current . . . 1 pA Typ
Very Low Power . . . 13 µA Per Channel Typ
Common-Mode Input Voltage Range
Includes Negative Rail
Wide Supply Voltage Range
2.7 V to 10 V
Available in the SOT-23 Package
Macromodel Included
IN +
1
VDD– /GND
2
IN –
3
5
VDD+
4
OUT
description
The TLV2211 is a single operational amplifier manufactured using the Texas Instruments Advanced LinCMOS
process. These devices are optimized and fully specified for single-supply 3-V and 5-V operation. For this
low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has
been dramatically improved using optimized design techniques for CMOS-type amplifiers. Another added
benefit is that these amplifiers exhibit rail-to-rail output swing. The output dynamic range can be extended using
the TLV2211 with loads referenced midway between the rails. The common-mode input voltage range is wider
than typical standard CMOS-type amplifiers. To take advantage of this improvement in performance and to
make this device available for a wider range of applications, VICR is specified with a larger maximum input offset
voltage test limit of ± 5 mV, allowing a minimum of 0 to 2-V common-mode input voltage range for a 3-V power
supply.
AVAILABLE OPTIONS
TA
VIOmax AT 25°C
PACKAGED DEVICES
SOT-23 (DBV)†
SYMBOL
0°C to 70°C
3 mV
TLV2211CDBV
VACC
– 40°C to 85°C
3 mV
TLV2211IDBV
VACI
CHIP FORM
(Y)
TLV2211Y
† The DBV package available in tape and reel only.
The Advanced LinCMOS process uses a silicon-gate technology to obtain input offset voltage stability with
temperature and time that far exceeds that obtainable using metal-gate technology. This technology also makes
possible input-impedance levels that meet or exceed levels offered by top-gate JFET and expensive
dielectric-isolated devices.
The TLV2211, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for
high-impedance sources such as piezoelectric transducers. Because of the low power dissipation levels
combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing
applications. In addition, the rail-to-rail output feature with single or split supplies makes these devices excellent
choices when interfacing directly to analog-to-digital converters (ADCs). All of these features combined with its
temperature performance make the TLV2211 ideal for remote pressure sensors, temperature control, active
voltage-resistive (VR) sensors, accelerometers, hand-held metering, and many other applications.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright  1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
description (continued)
The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under
MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may
result in degradation of the device parametric performance. Additional care should be exercised to prevent
VDD + supply-line transients under powered conditions. Transients of greater than 20 V can trigger the
ESD-protection structure, inducing a low-impedance path to VDD – /GND. Should this condition occur, the
sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a
latched condition and device failure.
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TLV2211Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2211C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(4)
(3)
VDD +
(5)
(1)
+
IN +
(3)
(4)
OUT
–
IN –
(2)
VDD – / GND
40
(2)
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ± 10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
(1)
(5)
32
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
Q3
Q6
Q9
R7
IN +
Q12
Q14
Q16
C2
R6
OUT
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
C1
IN –
R5
Q1
Q4
Q13
Q15
R2
Q2
R3
Q5
Q7
Q8
Q10
Q11
R1
R4
VDD – / GND
COMPONENT COUNT†
Transistors
Diodes
Resistors
Capacitors
23
6
11
2
† Includes both amplifiers and all
ESD, bias, and trim circuitry
D2
Q17
D1
Template Release Date: 7–11–94
VDD +
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
4
equivalent schematic
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD
Input voltage range, VI (any input, see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to VDD
Input current, II (each input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Total current into VDD + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Total current out of VDD – . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Duration of short-circuit current (at or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA: TLV2211C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
TLV2211I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to VDD – .
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought
below VDD – – 0.3 V.
3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
DBV
150 mW
1.2 mW/°C
96 mW
78 mW
recommended operating conditions
TLV2211C
Supply voltage, VDD (see Note 1)
Input voltage range, VI
MAX
MIN
MAX
2.7
10
2.7
10
VDD –
VDD –
Common-mode input voltage, VIC
Operating free-air temperature, TA
NOTE 1: All voltage values, except differential voltages, are with respect to VDD – .
POST OFFICE BOX 655303
TLV2211I
MIN
0
• DALLAS, TEXAS 75265
VDD + – 1.3
VDD + – 1.3
70
VDD –
VDD –
– 40
VDD + – 1.3
VDD + – 1.3
85
UNIT
V
V
V
°C
5
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER
VIO
Input offset voltage
αVIO
Temperature
coefficient of input
offset voltage
Input offset voltage
long-term drift
(see Note 4)
IIO
IIB
VICR
VOH
VOL
AVD
TA†
TEST CONDITIONS
TLV2211C
MIN
Full range
VDD ± = ± 1
1.5
5V
V,
VO = 0,
VIC = 0
0,
RS = 50 Ω
25°C
TLV2211I
TYP
MAX
0.47
3
MIN
TYP
MAX
0.47
3000
UNIT
mV
1
1
µV/°C
0.003
0.003
µV/mo
Input offset current
Full range
0.5
150
0.5
150
pA
Input bias current
Full range
1
150
1
150
pA
Common-mode input
voltage range
High-level
Hi
hl
l output
t t
voltage
Low-level
L
l
l output
t t
voltage
Large-signal
Large
signal
differential voltage
amplification
|VIO | ≤ 5 mV
mV,
25°C
0
to
2
Full range
g
0
to
1.7
RS = 50 Ω
IOH = – 100 µA
IOH = – 250 µA
IOL = 500 µA
VIC = 1
1.5
5V
V,
1 5 V,
V
VIC = 1.5
VO = 1 V to 2 V
0
to
2
– 0.3
to
2.2
V
0
to
1.7
25°C
2.94
2.94
25°C
2.85
2.85
Full range
IOL = 50 µA
VIC = 1.5 V,
– 0.3
to
2.2
2.5
V
2.5
25°C
15
15
25°C
150
150
Full range
500
7
mV
500
RL = 10 kه
25°C
3
3
7
Full range
1
RL = 1 Mه
25°C
600
600
1
V/mV
ri(d)
Differential input
resistance
25°C
1012
1012
Ω
ri(c)
Common-mode
input resistance
25°C
1012
1012
Ω
ci(c)
Common-mode
input capacitance
f = 10 kHz,
25°C
5
5
pF
zo
Closed-loop
output impedance
f = 7 kHz,
AV = 1
25°C
200
200
Ω
CMRR
Common-mode
rejection ratio
VIC = 0 to 1.7 V,,
RS = 50 Ω
VO = 1.5 V,,
kSVR
Supply voltage
rejection ratio
(∆VDD /∆VIO)
VDD = 2.7 V to 8 V,,
No load
VIC = VDD /2
,
IDD
Supply current
5V
VO = 1
1.5
V,
No load
25°C
65
Full range
60
25°C
80
Full range
80
83
65
83
dB
60
95
80
95
dB
25°C
Full range
80
11
25
30
11
25
30
µA
† Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV2211I is – 40°C to 85°C.
‡ Referenced to 1.5 V
NOTE 4: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
6
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
operating characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER
SR
Slew rate at unity gain
TA†
TEST CONDITIONS
1 1 V to 1
9V
VO = 1.1
1.9
V,
CL = 100 pF
F‡
RL = 10 kه,
25°C
Full
range
TLV2211C
MIN
TYP
0 01 0.025
0.01
0 025
TLV2211I
MAX
MIN
TYP
MAX
UNIT
0 01 0.025
0.01
0 025
V/µs
0 005
0.005
0 005
0.005
Vn
Equivalent
q
input noise
voltage
f = 10 Hz
25°C
80
80
f = 1 kHz
25°C
22
22
VN(PP)
Peak-to-peak equivalent
q
input noise voltage
f = 0.1 Hz to 1 Hz
25°C
660
660
f = 0.1 Hz to 10 Hz
25°C
880
880
In
Equivalent input noise
current
25°C
0.6
0.6
fA /√Hz
25°C
56
56
kHz
25°C
7
7
kHz
25°C
56°
56°
25°C
20
20
Gain bandwidth product
Gain-bandwidth
f = 10 kHz,
CL = 100 pF‡
RL = 10 kه,
BOM
Maximum output-swing
g
bandwidth
VO(PP) = 1 V,,
RL = 10 kه,
AV = 1,,
CL = 100 pF‡
φm
Phase margin at
unity gain
RL = 10 kه,
CL = 100 pF‡
Gain margin
† Full range is – 40°C to 85°C.
‡ Referenced to 1.5 V
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
nV/√Hz
µV
dB
7
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
VIO
Input offset voltage
αVIO
Temperature
coefficient of in
input
ut
offset voltage
Input offset voltage
long-term drift
(see Note 4)
IIO
Input offset current
IIB
Input bias current
VICR
VOH
VOL
AVD
Common-mode input
voltage range
High-level
High
level output
voltage
Low-level
Low
level output
voltage
Large signal
Large-signal
differential
voltage amplification
TA†
TEST CONDITIONS
TLV2211C
MIN
Full range
2.5 V
VDD ± = ± 2
V,
VO = 0,
VIC = 0,
0
RS = 50 Ω
MAX
0.45
3
5V
VIC = 2
2.5
V,
IOL = 500 µA
VIC = 2.5
2 5 V,
V
VO = 1 V to 4 V
RL = 10 kه
RL = 1 Mه
3
mV
0.003
0.003
µV/mo
25°C
0.5
0.5
150
150
1
1
150
25°C
0
to
4
Full range
g
0
to
3.5
– 0.3
to
4.2
150
0
to
4
4.95
4.95
25°C
4.875
4.875
12
12
25°C
120
120
Full range
500
25°C
6
3
V
4.5
25°C
Full range
pA
V
0
to
3.5
4.5
pA
– 0.3
to
4.2
25°C
Full range
IOL = 50 µA
0.45
UNIT
25°C
RS = 50 Ω
VIC = 2.5 V,
MAX
µV/°C
25°C
IOH = – 250 µA
TYP
05
0.5
Full range
IOH = – 100 µA
MIN
05
0.5
Full range
|VIO | ≤ 5 mV
TLV2211I
TYP
12
mV
500
6
12
3
V/mV
25°C
800
800
ri(d)
Differential input
resistance
25°C
1012
1012
Ω
ri(c)
Common-mode
input resistance
25°C
1012
1012
Ω
ci(c)
Common-mode
input capacitance
f = 10 kHz,
25°C
5
5
pF
zo
Closed-loop
output impedance
f = 7 kHz,
AV = 1
25°C
200
200
Ω
CMRR
Common-mode
rejection ratio
VIC = 0 to 2.7 V,
RS = 50 Ω
VO = 2.5 V,
kSVR
Supply voltage
rejection ratio
(∆VDD /∆VIO)
VDD = 4.4 V to 8 V,
No load
VIC = VDD /2,
IDD
Supply current
5V
VO = 2
2.5
V,
No load
25°C
70
Full range
70
25°C
80
Full range
80
83
70
83
dB
70
95
80
95
dB
25°C
Full range
80
13
25
30
13
25
30
µA
† Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV2211I is – 40°C to 85°C.
‡ Referenced to 1.5 V
NOTE 5: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
operating characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
SR
Slew rate at unity gain
1 5 V to 3
5V
VO = 1.5
3.5
V,
CL = 100 pF
F‡
TLV2211C
TA†
TEST CONDITIONS
RL = 10 kه,
MIN
TLV2211I
MAX
0 01 0.025
0.01
0 025
25°C
Full
range
TYP
MIN
TYP
MAX
UNIT
0 01 0.025
0.01
0 025
V/µs
0 005
0.005
0 005
0.005
Vn
Equivalent
q
input noise
voltage
f = 10 Hz
25°C
72
72
f = 1 kHz
25°C
21
21
VN(PP)
Peak-to-peak equivalent
q
input noise voltage
f = 0.1 Hz to 1 Hz
25°C
600
600
f = 0.1 Hz to 10 Hz
25°C
800
800
In
Equivalent input noise
current
25°C
0.6
0.6
fA /√Hz
25°C
65
65
kHz
25°C
7
7
kHz
25°C
56°
56°
25°C
22
22
Gain bandwidth product
Gain-bandwidth
f = 10 kHz,
CL = 100 pF‡
RL = 10 kه,
BOM
Maximum output-swing
g
bandwidth
VO(PP) = 2 V,,
RL = 10 kه,
AV = 1,,
CL = 100 pF‡
φm
Phase margin at
unity gain
RL = 10 kه,
CL = 100 pF‡
Gain margin
† Full range is – 40°C to 85°C.
‡ Referenced to 1.5 V
nV/√Hz
µV
dB
electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER
VIO
IIO
Input offset voltage
IIB
Input bias current
Input offset current
1 5 V,
V
VDD ± = ± 1.5
RS = 50 Ω
0
VO = 0,
VICR
Common-mode input voltage
g range
g
| VIO | ≤ 5 mV,
VOH
High level output voltage
High-level
IOH = –100 µA
IOH = – 200 µA
VOL
Low level output voltage
Low-level
VIC = 0,
VIC = 0,
IOL = 50 µA
IOL = 500 µA
AVD
Large-signal
g
g
differential
voltage amplification
VIC = 1
1.5
5V
V,
VO = 1 V to 2 V
ri(d)
Differential input resistance
ri(c)
Common-mode input resistance
ci(c)
Common-mode input capacitance
f = 10 kHz
zo
Closed-loop output impedance
f = 7 kHz,
CMRR
Common-mode rejection ratio
kSVR
Supplyy voltage
g rejection
j
ratio
(∆VDD /∆VIO)
IDD
Supply current
† Referenced to 1.5 V
TLV2211Y
TEST CONDITIONS
VIC = 0
0,
RS = 50 Ω
TYP
VDD = 2.7
2 7 V to 8 V,
V
VIC = VDD/2,
/2
VO = 1.5 V,
No load
• DALLAS, TEXAS 75265
UNIT
mV
0.5
pA
1
pA
– 0.3
to
2.2
V
2.85
VIC = 0 to 1.7 V,
MAX
0.47
2.94
AV = 1
VO = 1.5 V,
POST OFFICE BOX 655303
MIN
15
150
RL = 10 kن
7
RL = 1 Mن
600
V
mV
V/mV
1012
1012
Ω
5
pF
Ω
200
Ω
RS = 50 Ω
83
dB
No load
95
dB
11
µA
9
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
electrical characteristics at VDD = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER
VIO
IIO
Input offset voltage
IIB
Input bias current
VICR
VDD ± = ± 2.5
2 5 V,
V
RS = 50 Ω
VIC = 0
0,
Common-mode input voltage
g range
g
| VIO | ≤ 5 mV,
RS = 50 Ω
VOH
High level output voltage
High-level
IOH = – 100 µA
IOH = – 250 µA
VOL
Low level output voltage
Low-level
VIC = 2.5 V,
VIC = 2.5 V,
IOL = 50 µA
IOL = 500 µA
AVD
Large-signal
g
g
differential
voltage amplification
VIC = 2
2.5
5V
V,
VO = 1 V to 4 V
ri(d)
Differential input resistance
ri(c)
Common-mode input resistance
ci(c)
Common-mode input capacitance
f = 10 kHz
zo
Closed-loop output impedance
f = 7 kHz,
CMRR
Common-mode rejection ratio
kSVR
Supplyy voltage
g rejection
j
ratio
(∆VDD /∆VIO)
Input offset current
IDD
Supply current
† Referenced to 1.5 V
10
TLV2211Y
TEST CONDITIONS
VO = 0,
0
TYP
VDD = 4.4
4 4 V to 8 V,
V
VIC = VDD/2,
/2
VO = 2.5 V,
No load
• DALLAS, TEXAS 75265
UNIT
mV
0.5
pA
1
pA
– 0.3
to
4.2
V
4.875
VIC = 0 to 2.7 V,
MAX
0.45
4.95
AV = 1
VO = 2.5 V,
POST OFFICE BOX 655303
MIN
12
120
RL = 10 kن
12
RL = 1 Mن
800
V
mV
V/mV
1012
1012
Ω
5
pF
Ω
200
Ω
RS = 50 Ω
83
dB
No load
95
dB
13
µA
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
Input offset voltage
Distribution
vs Common-mode input voltage
1,, 2
3, 4
αVIO
Input offset voltage temperature coefficient
Distribution
5, 6
IIB/IIO
Input bias and input offset currents
vs Free-air temperature
7
VI
Input voltage
vs Supply
y voltage
g
vs Free-air temperature
8
9
VOH
VOL
High-level output voltage
vs High-level output current
10, 13
Low-level output voltage
vs Low-level output current
11, 12, 14
VO(PP)
Maximum peak-to-peak output voltage
vs Frequency
15
IOS
Short circuit output current
Short-circuit
vs Supply
y voltage
g
vs Free-air temperature
16
17
VO
Output voltage
vs Differential input voltage
18, 19
AVD
Differential voltage
g amplification
vs Load resistance
vs Frequency
vs Free-air temperature
20
21, 22
23, 24
zo
Output impedance
vs Frequency
25, 26
CMRR
Common mode rejection ratio
Common-mode
vs Frequency
q
y
vs Free-air temperature
27
28
kSVR
Supply voltage rejection ratio
Supply-voltage
vs Frequency
q
y
vs Free-air temperature
29,, 30
31
IDD
Supply current
vs Supply voltage
32
SR
Slew rate
vs Load capacitance
vs Free-air temperature
33
34
VO
VO
Large-signal pulse response
vs Time
35, 36, 37, 38
Small-signal pulse response
vs Time
39, 40, 41, 42
Vn
Equivalent input noise voltage
vs Frequency
Noise voltage (referred to input)
Over a 10-second period
45
Total harmonic distortion plus noise
vs Frequency
46
Gain bandwidth product
Gain-bandwidth
vs Free-air temperature
vs Supply voltage
47
48
Phase margin
vs Frequency
q
y
vs Load capacitance
21,, 22
49
Gain margin
vs Load capacitance
50
Unity-gain bandwidth
vs Load capacitance
51
THD + N
φm
B1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
43, 44
11
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2211
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLV2211
INPUT OFFSET VOLTAGE
30
30
376 Amplifiers From 1 Wafer Lot
VDD = ± 1.5 V
TA = 25°C
25
Precentage of Amplifiers – %
Precentage of Amplifiers – %
25
20
15
10
5
0
376 Amplifiers From 1 Wafer Lot
VDD = ± 2.5 V
TA = 25°C
20
15
10
5
– 1.5
–1
– 0.5
0
0.5
1
VIO – Input Offset Voltage – mV
0
1.5
– 1.5
–1
– 0.5
0
0.5
1
VIO – Input Offset Voltage – mV
Figure 1
Figure 2
INPUT OFFSET VOLTAGE†
vs
COMMON-MODE INPUT VOLTAGE
INPUT OFFSET VOLTAGE†
vs
COMMON-MODE INPUT VOLTAGE
1
0.8
0.6
VIO – Input Offset Voltage – mV
VIO – Input Offset Voltage – mV
ÁÁ
ÁÁ
1
VDD = 3 V
RS = 50 Ω
TA = 25°C
0.8
0.4
0.2
0
– 0.2
ÁÁ
ÁÁ
ÁÁ
– 0.4
– 0.6
– 0.8
–1
–1
0
1
2
3
VIC – Common-Mode Input Voltage – V
VDD = 5 V
RS = 50 Ω
TA = 25°C
0.6
0.4
0.2
0
– 0.2
– 0.4
– 0.6
– 0.8
–1
–1
0
1
2
3
4
VIC – Common-Mode Input Voltage – V
Figure 4
Figure 3
† For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
12
1.5
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2211 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
DISTRIBUTION OF TLV2211 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
50
32 Amplifiers From 1 Wafer Lot
VDD = ± 1.5 V
P Package
TA = 25°C
40
Percentage of Amplifiers – %
Percentage of Amplifiers – %
50
30
20
10
0
–3
–2
–1
0
1
2
32 Amplifiers From 1 Wafer Lot
VDD = ± 2.5 V
P Package
TA = 25°C
40
30
20
10
0
3
–3
α VIO – Temperature Coefficient – µ V / °C
–2
–1
INPUT BIAS AND INPUT OFFSET CURRENTS†
vs
FREE-AIR TEMPERATURE
5
VDD± = ± 2.5 V
VIC = 0
VO = 0
RS = 50 Ω
3
RS = 50 Ω
TA = 25°C
4
3
70
60
50
30
IIB
20
2
1
0
| VIO | ≤ 5 mV
–1
ÁÁ
ÁÁ
40
–2
–3
IIO
–4
10
0
25
2
INPUT VOLTAGE
vs
SUPPLY VOLTAGE
100
80
1
Figure 6
VI – Input Voltage – V
IIIB
IB and IIIO
IO – Input Bias and Input Offset Currents – pA
Figure 5
90
0
α VIO – Temperature Coefficient – µ V / °C
–5
105
45
65
85
TA – Free-Air Temperature – °C
125
1
Figure 7
1.5
3
3.5
2
2.5
| VDD ± | – Supply Voltage – V
4
Figure 8
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
13
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
INPUT VOLTAGE†‡
vs
FREE-AIR TEMPERATURE
HIGH-LEVEL OUTPUT VOLTAGE†‡
vs
HIGH-LEVEL OUTPUT CURRENT
5
3
VDD = 5 V
VDD = 3 V
VOH – High-Level Output Voltage – V
VI – Input Voltage – V
4
3
| VIO | ≤ 5 mV
2
ÁÁÁ
1
0
–1
– 55 – 35 – 15
5
25
45
65 85 105
TA – Free-Air Temperature – °C
125
ÁÁ
ÁÁ
ÁÁ
2.5
TA = – 40°C
2
TA = 25°C
1.5
TA = 85°C
1
TA = 125°C
0.5
0
0
200
1.4
1
VIC = 0
VOL – Low-Level Output Voltage – V
VOL – Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE†‡
vs
LOW-LEVEL OUTPUT CURRENT
VDD = 3 V
TA = 25°C
VIC = 0.75 V
0.8
0.6
VIC = 1.5 V
ÁÁ
ÁÁ
ÁÁ
0.4
0.2
0
0
4
2
3
IOL – Low-Level Output Current – mA
1
5
VDD = 3 V
VIC = 1.5 V
1.2
TA = 125°C
1
TA = 85°C
0.8
TA = 25°C
0.6
0.4
TA = – 40°C
0.2
0
0
Figure 11
1
2
3
4
IOL – Low-Level Output Current – mA
Figure 12
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡ For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
14
800
Figure 10
LOW-LEVEL OUTPUT VOLTAGE‡
vs
LOW-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
600
| IOH | – High-Level Output Current – µ A
Figure 9
1.2
400
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE†‡
vs
LOW-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE†‡
vs
HIGH-LEVEL OUTPUT CURRENT
1.4
5
VDD = 5 V
VIC = 2.5 V
ÁÁ
ÁÁ
1.2
4
VOL – Low-Level Output Voltage – V
VOH – High-Level Output Voltage – V
TA = 125°C
TA = 85°C
TA = 25°C
3
TA = – 40°C
2
VDD = 5 V
VIC = 2.5 V
0
200
TA = 85°C
0.8
TA = 25°C
0.6
0.4
ÁÁ
ÁÁ
1
0
TA = 125°C
1
400
600
800
TA = – 40°C
0.2
0
0
1000
1
| IOH | – High-Level Output Current – µA
Figure 13
4
5
6
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
16
5
VDD = 5 V
I OS – Short-Circuit Output Current – mA
VO(PP) – Maximum Peak-to-Peak Output Voltage – V
3
Figure 14
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE‡
vs
FREQUENCY
ÁÁ
ÁÁ
ÁÁ
2
IOL – Low-Level Output Current – mA
4
3
VDD = 3 V
2
1
RI = 10 kΩ
TA = 25°C
0
102
12
104
VID = – 100 mV
10
8
6
4
2
VID = 100 mV
0
–2
103
f – Frequency – Hz
VO = VDD/2
VIC = VDD/2
TA = 25°C
14
2
3
6
4
5
VDD – Supply Voltage – V
7
8
Figure 16
Figure 15
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡ For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
15
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
SHORT-CIRCUIT OUTPUT CURRENT†‡
vs
FREE-AIR TEMPERATURE
OUTPUT VOLTAGE‡
vs
DIFFERENTIAL INPUT VOLTAGE
3
VDD = 5 V
VIC = 2.5 V
VO = 2.5 V
12
10
VID = – 100 mV
8
6
4
2
–2
– 75
– 50
2
1.5
1
0.5
VID = 100 mV
0
VDD = 3 V
RI = 10 kΩ
VIC = 1.5 V
TA = 25°C
2.5
V O – Output Voltage – V
I OS – Short-Circuit Output Current – mA
14
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
0
– 1000 – 750 – 500 – 250
0
250 500 750 1000
VID – Differential Input Voltage – µV
125
Figure 17
Figure 18
OUTPUT VOLTAGE‡
vs
DIFFERENTIAL INPUT VOLTAGE
VDD = 5 V
VIC = 2.5 V
RL = 10 kΩ
TA = 25°C
V O – Output Voltage – V
4
3
2
1
0
– 1000 – 750 – 500 – 250
0
250 500 750 1000
VID – Differential Input Voltage – µV
AVD – Differential Voltage Amplification – V/mV
5
DIFFERENTIAL VOLTAGE AMPLIFICATION‡
vs
LOAD RESISTANCE
103
VO(PP) = 2 V
TA = 25°C
VDD = 5 V
102
VDD = 3 V
101
ÁÁ
ÁÁ
1
0.1
1
101
102
RL – Load Resistance – kΩ
Figure 19
Figure 20
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡ For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
16
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
103
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN†
vs
FREQUENCY
40
45°
20
Phase Margin
10
0°
0
Gain
– 10
– 20
φom
m – Phase Margin
AVD
A
VD – Large-Signal Differential
Voltage Amplification – dB
30
ÁÁ
ÁÁ
90°
VDD = 3 V
RL = 10 kΩ
CL= 100 pF
TA = 25°C
– 45°
– 30
– 40
103
104
105
f – Frequency – Hz
106
– 90°
Figure 21
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN†
vs
FREQUENCY
40
45°
20
Phase Margin
10
0°
0
Gain
– 10
– 20
φom
m – Phase Margin
AVD
A
VD – Large-Signal Differential
Voltage Amplification – dB
30
ÁÁ
ÁÁ
90°
VDD = 5 V
RL= 10 kΩ
CL= 100 pF
TA = 25°C
– 45°
– 30
– 40
103
104
105
f – Frequency – Hz
106
– 90°
Figure 22
† For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
17
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION†‡
vs
FREE-AIR TEMPERATURE
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION†‡
vs
FREE-AIR TEMPERATURE
104
10 3
AVD – Large-Signal Differential Voltage
Amplification – V/mV
AVD – Large-Signal Differential Voltage
Amplification – V/mV
RL = 1 MΩ
10 2
10 1
RL = 10 kΩ
VDD = 3 V
VIC = 1.5 V
VO = 0.5 V to 2.5 V
1
– 75
– 50
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
VDD = 5 V
VIC = 2.5 V
VO = 1 V to 4 V
103
RL = 1 MΩ
102
101
RL = 10 kΩ
1
– 75
125
– 50
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
Figure 23
Figure 24
OUTPUT IMPEDANCE‡
vs
FREQUENCY
OUTPUT IMPEDANCE‡
vs
FREQUENCY
10 3
10 3
VDD = 5 V
TA = 25°C
z o – Output Impedance – Ω
z o – Output Impedance – Ω
VDD = 3 V
TA = 25°C
10 2
AV = 100
AV = 10
101
AV = 100
10 2
101
AV = 10
AV = 1
1
10 1
AV = 1
10 2
10 3
f– Frequency – Hz
10 4
1
101
Figure 25
102
103
f– Frequency – Hz
Figure 26
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡ For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
18
125
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
104
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
COMMON-MODE REJECTION RATIO†
vs
FREQUENCY
COMMON-MODE REJECTION RATIO†‡
vs
FREE-AIR TEMPERATURE
88
TA = 25°C
VDD = 5 V
VO = 2.5 V
80
60 VDD = 3 V
VO = 1.5 V
40
20
0
10 1
10 2
10 4
10 3
f – Frequency – Hz
CMMR – Common-Mode Rejection Ratio – dB
CMRR – Common-Mode Rejection Ratio – dB
100
86
VDD = 5 V
84
VDD = 3 V
82
80
78
0
25
50
75 100
– 75 – 50 – 25
TA – Free-Air Temperature – °C
10 5
Figure 27
Figure 28
SUPPLY-VOLTAGE REJECTION RATIO†
vs
FREQUENCY
SUPPLY-VOLTAGE REJECTION RATIO†
vs
FREQUENCY
100
VDD = 3 V
TA = 25°C
80
k SVR – Supply-Voltage Rejection Ratio – dB
k SVR – Supply-Voltage Rejection Ratio – dB
100
kSVR +
60
40
kSVR –
20
ÁÁ
ÁÁ
0
– 20
10 1
125
10 2
10 3
10 4
f – Frequency – Hz
10 5
10 6
VDD = 5 V
TA = 25°C
kSVR +
80
60
kSVR –
40
20
ÁÁ
ÁÁ
ÁÁ
0
– 20
101
Figure 29
10 2
10 3
10 4
10 5
10 6
f – Frequency – Hz
Figure 30
† For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
‡ Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
19
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
SUPPLY-VOLTAGE REJECTION RATIO†
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT†
vs
SUPPLY VOLTAGE
30
VDD = 2.7 V to 8 V
VIC = VO = VDD / 2
96
20
TA = – 40°C
TA = 25°C
15
ÁÁ
ÁÁ
ÁÁ
94
Á
Á
Á
VO = VDD/2
VIC = VDD/2
No Load
25
98
I DD – Supply Current – µ A
k SVR – Supply-Voltage Rejection Ratio – dB
100
92
90
– 75 – 50
– 25
0
25
50
75
100
10
TA = 85°C
5
0
125
0
2
TA – Free-Air Temperature – °C
Figure 31
8
10
SLEW RATE†‡
vs
FREE-AIR TEMPERATURE
0.050
0.040
VDD = 5 V
AV = – 1
TA = 25°C
SR –
0.040
0.030
SR – Slew Rate – V/ µ s
SR – Slew Rate – V/ µ s
6
Figure 32
SLEW RATE‡
vs
LOAD CAPACITANCE
0.035
4
VDD – Supply Voltage – V
0.025
SR +
0.020
0.015
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = 1
SR –
0.030
SR +
0.020
0.010
0.010
0.05
0
101
102
103
104
CL – Load Capacitance – pF
105
0
– 75
– 50
Figure 33
– 25
0
25
50
75 100
TA – Free-Air Temperature – °C
Figure 34
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡ For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
20
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
INVERTING LARGE-SIGNAL PULSE
RESPONSE†
INVERTING LARGE-SIGNAL PULSE
RESPONSE†
3
5
VO – Output Voltage – V
2.5
2
1.5
1
3
2
1
0.5
0
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = – 1
TA = 25°C
4
VO – Output Voltage – V
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
AV = –1
TA = 25°C
0
0
50 100 150 200 250 300 350 400 450 500
t – Time – µs
0
50 100 150 200 250 300 350 400 450 500
t – Time – µs
Figure 35
Figure 36
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE†
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE†
5
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
4 A =1
V
TA = 25°C
VDD = 5 V
CL = 100 pF
AV = 1
TA = 25°C
4
VO – Output Voltage – V
VO – Output Voltage – V
5
3
2
1
3
2
RL = 10 kΩ
Tied to 2.5 V
1
0
0
100 200 300 400 500 600 700 800 900 1000
t – Time – µs
RL = 100 kΩ
Tied to 2.5 V
RL = 10 kΩ
Tied to 0 V
0
0
100
200
300
400
500
t – Time – µs
Figure 37
Figure 38
† For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
21
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
INVERTING SMALL-SIGNAL
PULSE RESPONSE†
INVERTING SMALL-SIGNAL
PULSE RESPONSE†
0.76
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = – 1
TA = 25°C
2.56
VO
VO – Output Voltage – V
074
VO – Output Voltage – V
2.58
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
AV = – 1
TA = 25°C
0.72
0.7
0.68
0.66
2.54
2.52
2.5
2.48
2.46
0.64
0
10
20
30
40
2.44
50
0
t – Time – µs
10
Figure 39
2.58
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
AV = 1
TA = 25°C
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = 1
TA = 25°C
2.56
VO
VO – Output Voltage – V
0.74
0.72
0.7
0.68
0.66
2.54
2.52
2.5
2.48
2.46
0
10
20
30
40
50
2.44
0
t – Time – µs
10
20
30
40
t – Time – µs
Figure 42
Figure 41
† For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
22
50
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE†
0.76
VO
VO – Output Voltage – V
40
Figure 40
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE†
0.64
20
30
t – Time – µs
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
50
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
EQUIVALENT INPUT NOISE VOLTAGE†
vs
FREQUENCY
EQUIVALENT INPUT NOISE VOLTAGE†
vs
FREQUENCY
80
V n – Equivalent Input Noise Voltage – nV/ Hz
V n – Equivalent Input Noise Voltage – nV/ Hz
80
VDD = 3 V
RS = 20 Ω
TA = 25°C
70
60
50
40
30
20
10
0
101
102
103
f – Frequency – Hz
VDD = 5 V
RS = 20 Ω
TA = 25°C
70
60
50
40
30
20
10
0
101
104
102
Figure 44
TOTAL HARMONIC DISTORTION PLUS NOISE†
vs
FREQUENCY
THD + N – Total Harmonic Distortion Plus Noise – %
INPUT NOISE VOLTAGE OVER
A 10-SECOND PERIOD†
1000
VDD = 5 V
f = 0.1 Hz to 10 Hz
TA = 25°C
Noise Voltage – nV
500
250
0
– 250
– 500
– 750
– 1000
0
2
4
104
f – Frequency – Hz
Figure 43
750
103
6
8
10
10
VDD = 10 V
VIC = 2.5 V
RL = 10 kΩ
TA = 25°C
AV = 100
1
AV = 10
0.1
AV = 1
0.01
10 1
t – Time – s
10 2
10 3
10 4
f – Frequency – Hz
Figure 46
Figure 45
† For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
23
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
GAIN-BANDWIDTH PRODUCT
vs
SUPPLY VOLTAGE
GAIN-BANDWIDTH PRODUCT†‡
vs
FREE-AIR TEMPERATURE
80
80
Gain-Bandwidth Product – kHz
75
Gain-Bandwidth Product – kHz
VDD = 5 V
f = 10 kHz
RL = 10 kΩ
CL = 100 pF
70
65
60
RL = 10 kΩ
CL = 100 pF
TA 25°C
75
70
65
60
55
55
50
– 75
50
– 50 – 25
0
25
50
75
100
TA – Free-Air Temperature – °C
0
125
1
2
3
4
5
6
VDD – Supply Voltage – V
Figure 47
GAIN MARGIN
vs
LOAD CAPACITANCE
75°
25
Rnull = 1000 Ω
TA = 25°C
60°
20
Rnull = 500 Ω
Gain Margin – dB
Rnull = 1000 Ω
45°
30°
10 kΩ
15°
10 kΩ
VI
0
101
10
Rnull = 500 Ω
VDD +
–
+
15
5
Rnull
CL
VDD –
102
103
104
CL – Load Capacitance – pF
Rnull = 0
TA = 25°C
Rnull = 0
105
0
101
Figure 49
102
103
104
CL – Load Capacitance – pF
Figure 50
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡ For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
24
8
Figure 48
PHASE MARGIN
vs
LOAD CAPACITANCE
φom
m – Phase Margin
7
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
105
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
TYPICAL CHARACTERISTICS
UNITY-GAIN BANDWIDTH
vs
LOAD CAPACITANCE
80
TA = 25°C
B1 – Unity-Gain Bandwidth – kHz
70
60
50
40
30
ÁÁÁ
ÁÁÁ
20
10
0
101
10 2
10 3
10 4
10 5
CL – Load Capacitance – pF
10 6
Figure 51
APPLICATION INFORMATION
driving large capacitive loads
The TLV2211 is designed to drive larger capacitive loads than most CMOS operational amplifiers. Figure 49
and Figure 50 illustrate its ability to drive loads up to 600 pF while maintaining good gain and phase margins
(Rnull = 0).
A smaller series resistor (Rnull) at the output of the device (see Figure 52) improves the gain and phase margins
when driving large capacitive loads. Figure 49 and Figure 50 show the effects of adding series resistances of
500 Ω and 1000 Ω. The addition of this series resistor has two effects: the first is that it adds a zero to the transfer
function and the second is that it reduces the frequency of the pole associated with the output load in the transfer
function.
The zero introduced to the transfer function is equal to the series resistance times the load capacitance. To
calculate the improvement in phase margin, equation (1) can be used.
ǒ
Ǔ
+ tan–1 2 × π × UGBW × Rnull × CL
where :
∆φ m1 + improvement in phase margin
UGBW + unity-gain bandwidth frequency
R null + output series resistance
C L + load capacitance
∆φ m1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
(1)
25
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
APPLICATION INFORMATION
driving large capacitive loads (continued)
The unity-gain bandwidth (UGBW) frequency decreases as the capacitive load increases (see Figure 51). To
use equation (1), UGBW must be approximated from Figure 51.
10 kΩ
VDD +
VI
10 kΩ
Rnull
–
+
CL
VDD – / GND
Figure 52. Series-Resistance Circuit
driving heavy dc loads
The TLV2211 is designed to provide better sinking and sourcing output currents than earlier CMOS rail-to-rail
output devices. This device is specified to sink 500 µA and source 250 µA at VDD = 3 V and VDD = 5 V at a
maximum quiescent IDD of 25 µA. This provides a greater than 90% power efficiency.
When driving heavy dc loads, such as 10 kΩ, the positive edge under slewing conditions can experience some
distortion. This condition can be seen in Figure 37. This condition is affected by three factors.
D
D
D
26
Where the load is referenced. When the load is referenced to either rail, this condition does not occur. The
distortion occurs only when the output signal swings through the point where the load is referenced.
Figure 38 illustrates two 10-kΩ load conditions. The first load condition shows the distortion seen for a 10-kΩ
load tied to 2.5 V. The third load condition shows no distortion for a 10-kΩ load tied to 0 V.
Load resistance. As the load resistance increases, the distortion seen on the output decreases. Figure 38
illustrates the difference seen on the output for a 10-kΩ load and a 100-kΩ load with both tied to 2.5 V.
Input signal edge rate. Faster input edge rates for a step input result in more distortion than with slower input
edge rates.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts , the model generation software used
with Microsim PSpice . The Boyle macromodel (see Note 6) and subcircuit in Figure 53 are generated using
the TLV2211 typical electrical and operating characteristics at TA = 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D
D
D
D
D
D
D
D
D
D
D
D
Maximum positive output voltage swing
Maximum negative output voltage swing
Slew rate
Quiescent power dissipation
Input bias current
Open-loop voltage amplification
Unity-gain frequency
Common-mode rejection ratio
Phase margin
DC output resistance
AC output resistance
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
99
3
VDD +
9
RSS
92
FB
10
J1
DP
VC
J2
IN +
11
RD1
VAD
DC
12
C1
R2
–
53
HLIM
–
+
C2
6
–
–
–
+
VLN
+
GCM
GA
VLIM
8
–
RD2
54
4
91
+
VLP
7
60
+
–
+ DLP
90
RO2
VB
IN –
VDD –
–
+
ISS
RP
2
1
DLN
EGND +
–
RO1
DE
5
+
VE
OUT
.SUBCKT TLV2211 1 2 3 4 5
C1
11
12
8.86E–12
C2
6
7
50.00E–12
DC
5
53
DX
DE
54
5
DX
DLP
90
91
DX
DLN
92
90
DX
DP
4
3
DX
EGND
99
0
POLY (2) (3,0) (4,0) 0 .5 .5
FB
7
99
POLY (5) VB VC VE VLP
+ VLN 0 4.29E6 –6E6 6E6 6E6 –6E6
GA
6
0
11
12 9.425E–6
GCM
0
6
10
99 1320.2E–12
ISS
3
10
DC 1.250E–6
HLIM
90
0
VLIM 1K
J1
11
2
10 JX
J2
12
1
10 JX
R2
6
9
100.0E3
RD1
60
11
106.1E3
RD2
60
12
106.1E3
R01
8
5
50
R02
7
99
150
RP
3
4
419.2E3
RSS
10
99
160.0E6
VAD
60
4
–.5
VB
9
0
DC 0
VC
3
53
DC .55
VE
54
4
DC .55
VLIM
7
8
DC 0
VLP
91
0
DC 0.1
VLN
0
92
DC 2.6
.MODEL DX D (IS=800.0E–18)
.MODEL JX PJF (IS=500.0E–15 BETA=166E–6
+ VTO=–.004)
.ENDS
Figure 53. Boyle Macromodel and Subcircuit
PSpice and Parts are trademark of MicroSim Corporation.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
27
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
MECHANICAL INFORMATION
DBV (R-PDSO-G5)
PLASTIC SMALL-OUTLINE PACKAGE
0,40
0,20
5
0,25 M
4
1,80
1,50
3,00
2,50
0,15 NOM
1
2
3
0,95
Gage Plane
3,10
2,70
0,25
0°– 8°
Seating Plane
1,30
1,00
0,10
0,05 MIN
4073253-3/A 09/95
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions include mold flash or protrusion.
28
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  1998, Texas Instruments Incorporated