TOSHIBA TPC8016-H

TPC8016-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8016-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
•
Small footprint due to small and thin package
•
•
High speed switching
Small gate charge: Qg = 48 nc (typ.)
•
Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.)
•
•
High forward transfer admittance: |Yfs| = 25 S (typ.)
Low leakage current: IDSS = 10 µA (max) (V DS = 30 V)
•
Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
V DGR
30
V
Gate-source voltage
V GSS
±20
V
ID
15
IDP
60
PD
1.9
W
PD
1.0
W
EA S
146
mJ
IAR
15
A
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
(Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
A
JEDEC
?
JEITA
?
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
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TPC8016-H
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-a)
65.8
°C/W
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8016
H
Type
※
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, R G = 25 Ω, IAR = 15 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
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TPC8016-H
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
V GS = ±16 V, V DS = 0 V


±10
µA
Drain cut-OFF current
IDSS
V DS = 30 V, V GS = 0 V


10
µA
V (BR) DSS
ID = 10 mA, V GS = 0 V
30


V (BR) DSX
ID = 10 mA, V GS = −20 V
15


V DS = 10 V, ID = 1 mA
1.1

2.3
V GS = 4.5 V , ID = 7.5 A

5.5
7.5
V GS = 10 V , ID = 7.5 A

3.7
5.7
V DS = 10 V , ID = 7.5 A
12.5
25


2380


410


980


9.8


21

Drain-source breakdown voltage
Gate threshold voltage
V th
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yf s |
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
tr
Turn-ON time
ton
tf
Turn-OFF time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
Gate switch charge
QSW
4.7 Ω
Switching time
Fall time
ID = 7.5 A
V OUT
10 V
V GS
0V
RL = 2 Ω
Rise time
V DS = 10 V , V GS = 0 V , f = 1 MHz
V
mΩ
S
pF
ns

15

V DD ∼
− 15 V
<
Duty = 1%, tw = 10 µs

60

V DD ∼
− 24 V, V GS = 10 V , ID = 15 A

46

V DD ∼
− 24 V, V GS = 5 V , ID = 15 A

26


7.2


12.2


15.6

V DD ∼
− 24 V, V GS = 10 V , ID = 15 A
V
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP



60
A


−1.2
V
V DSF
IDR = 15 A, V GS = 0 V
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TPC8016-H
ID – V DS
10
3.2
4.5
3.15
10
3.5
Drain current D
I
ID
Drain current
3.05
6
3.0
4
2.9
2
0
0
0.6
Drain-source voltage
0.8
12
3.1
8
3.0
2.9
VGS = 2.8 V
VGS = 2.7 V
0.4
3.2
4
2.8
0.2
10
(A)
16
0
0
1.0
0.4
VDS (V)
0.8
ID – V GS
VDS (V)
(A)
Drain-source voltage
Drain current D
I
30
20
25
10
100
VDS (V)
Common source
Ta = 25°C
Pulse test
0.8
0.6
0.4
ID = 15 A
0.2
7.5
Ta = −55°C
1
2
3
3.8
4
Gate-source voltage
2.0
V DS – V GS
40
5
0
0
6
VGS (V)
2
4
6
Gate-source voltage
|Yf s | – ID
8
10
12
VGS (V)
RDS (ON) – ID
100
Drain-source ON resistance
R DS (ON) (mΩ)
100
Yfs 
(S)
1.6
1
Common source
VDS = 10 V
Pulse test
Forward transfer admittance
1.2
Drain-source voltage
50
0
0
Common source
Ta = 25°C, pulse test
3.3
4.5 3.5
3.1
(A)
8
ID – V DS
20
Common source
Ta = 25°C, pulse test
Ta = −55°C
25
10
100
1
Common source
Ta = 25°C
Pulse test
10
VGS = 4.5 V
10
Common source
VDS = 10 V
Pulse test
0.1
0.1
1
Drain current D
I
10
1
0.1
30
(A)
1
Drain current D
I
4
10
100
(A)
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TPC8016-H
RDS (ON) – Ta
IDR – V DS
100
(A)
10
8
Drain reverse current DR
I
ID = 15, 7.5, 3.8 A
6
VGS = 4.5 V
ID = 15, 7.5, 3.8 A
4
10
2
5
10
3
10
VGS = 0 V
1
1
Common source
Ta = 25°C
Pulse test
Common source
Pulse test
0
−80
−40
0
40
Ambient temperature
80
Ta
120
0.1
0
160
−0.2
(°C)
−0.4
Drain-source voltage
Capacitance – V DS
Gate threshold voltage Vth (V)
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
10
Drain-source voltage
100
2
1.5
1
Common source
0.5 V
DS = 10 V
ID = 1 mA
Pulse test
0
−80
−40
0
VDS (V)
Ambient temperature
PD – Ta
40
VDS (V)
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
1.6
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b )
Drain-source voltage
t = 10 s
1.2
80
120
Ta
160
(°C)
Dynamic input/output characteristics
2
(1)
40
(2)
0.8
0.4
16
Common source
Ta = 25°C
ID = 15 A
Pulse test
14
30
12
VDD = 24 V
6
10
VDD = 24 V
12
20
8
VGS
VDS
6
12
10
4
6
VGS (V)
(pF)
1000
C
Capacitance
VDS (V)
2.5
Ciss
(W)
−1
V th – Ta
10000
Drain power dissipation PD
−0.8
−0.6
Gate-source voltage
Drain-source ON resistance
R DS (ON) (mΩ)
12
2
0
0
50
100
Ambient temperature
150
Ta
0
0
200
(°C)
10
20
30
40
Total gate charge Qg
5
50
0
60
(nC)
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TPC8016-H
r th − tw
Normalized transient thermal impedance
r th (°C/W)
1000
(1)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(2)
t = 10 s
100
(1)
10
1
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width tw
10
100
1000
(S)
Safe operating area
100
ID max (plused) *
1 ms*
10
Drain current D
I
(A)
10 ms*
1
0.1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01
0.1
VDSS max
1
Drain-source voltage
10
100
VDS (V)
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TPC8016-H
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the mos t recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own ris k.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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