TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V ID 6 Pulse (Note 1) IDP 24 Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 5.8 mJ Avalanche current IAR 3 A Repetitive avalanche energy (Note 4) EAR 0.22 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current (Note 1) A JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration 6 5 4 1 2 3 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle it with caution. 1 2004-07-06 TPC6001 Marking (Note 5) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. S2A Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance VDS = 10 V, ID = 200 µA 0.5 ⎯ 1.2 RDS (ON) VGS = 2.0 V, ID = 3 A ⎯ 35 60 RDS (ON) VGS = 2.5 V, ID = 3 A ⎯ 28 45 Vth RDS (ON) VGS = 4.5 V, ID = 3 A ⎯ 22 30 Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 7.5 15 ⎯ Input capacitance Ciss ⎯ 755 ⎯ ⎯ 172 ⎯ ⎯ 222 ⎯ ⎯ 6 ⎯ ⎯ 11 ⎯ ⎯ 32 ⎯ ⎯ 64 ⎯ ⎯ 15 ⎯ ⎯ 10 ⎯ ⎯ 5 ⎯ Crss Output capacitance Coss Rise time Turn-ON time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton Turn-OFF time Total gate charge (gate-source plus gate-drain) 4.7 Ω Switching time Fall time tf toff ID = 3 A VGS 5 V 0V VOUT RL = 3.3 Ω Reverse transfer capacitance VDD ∼ − 10 V Duty < = 1%, tw = 10 µs Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − 16 V, VGS = 5 V, ID = 6 A 2 V V mΩ S pF ns nC 2004-07-06 TPC6001 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Pulse drain reverse current Forward voltage (diode) (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 24 A ⎯ ⎯ −1.2 V VDSF IDR = 6 A, VGS = 0 V Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: . • on lower left of the marking indicates Pin 1. 3 2004-07-06 TPC6001 ID – VDS ID – VDS 20 10 2.5 4 1.8 2 6 1.7 (A) 10 (A) ID 1.6 6 Drain current ID 2 16 8 Drain current Common source Ta = 25°C Pulse test 2.5 4.5 1.5 4 1.4 10, 8, 6 12 1.8 8 1.6 4 2 1.4 VGS = 1.3 V 0 0 Common source Ta = 25°C Pulse test 0.2 0.4 0.6 Drain-source voltage 0.8 VDS VGS = 1.2 V 0 0 1.0 (V) 2 4 ID – VGS VDS (V) 8 Drain-source voltage (A) ID Drain current Common source VDS = 10 V Pulse test 6 4 25°C 100°C 0.5 1 1.5 Common source Ta = 25°C Pulse test 0.4 0.3 0.2 ID = 6 A 0.1 3A Ta = −55°C 1.5 A 2 Gate-source voltage 2.5 VGS 0 0 3 (V) 2 4 6 Gate-source voltage |Yfs| – ID 8 VGS 10 (V) RDS (ON) – ID 100 100 50 30 Drain-source on resistance RDS (ON) (mΩ) |Yfs| (S) (V) VDS – VGS 2 Forward transfer admittance VDS 10 0.5 10 0 0 8 Drain-source voltage 14 12 6 Ta = −55°C 25°C 100°C 10 5 3 Common source 2V 2.5 V VGS = 4.5 V 30 10 3 Common source VDS = 10 V Pulse test 1 1 3 5 10 Drain current ID 30 50 Ta = 25°C Pulse test 1 0.1 100 (A) 0.3 1 3 Drain current ID 4 10 30 100 (A) 2004-07-06 TPC6001 RDS (ON) – Ta IDR – VDS 100 100 Common source (A) IDR 6A 60 Drain reverse current ID = 3 A, 1.5 A 40 VGS = 2 V −40 0 40 Ambient temperature 80 Ta 120 1V 3V 10 VGS = 0 V 3 1 0.3 0.1 0 160 5V Common source Ta = 25°C Pulse test −0.2 (°C) −0.4 (V) 300 Coss 100 Crss Common source 30 VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 0.3 1 3 10 Drain-source voltage 30 1 Gate threshold voltage Ciss (V) 1000 1.2 Vth Common source C (pF) VDS −1.2 1.4 3000 Capacitance −1 Vth – Ta Capacitance – VDS VDS = 10 V ID = 200 µA Pulse test 0.8 0.6 0.4 0.2 0 −80 100 −40 VDS 0 40 80 Ambient temperature PD – Ta Ta 160 120 (°C) Dynamic input/output characteristics 12 30 2.5 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) Common source (V) 2 Drain-source voltage 1.5 VDS (2) Device mounted on a glass-epoxy board (b) (Note 2b) PD (W) −0.8 Drain-source voltage 10000 Drain power dissipation −0.6 (1) DC 1 (2) t = 5 s 0.5 (2) DC 25 ID = 6 A 8V Ta = 25°C 10 4V Pulse test 8 20 VDS = 16 V VDD = 16 V 15 6 8V 4 10 VGS 2 5 (V) 0 −80 VGS = 2.5 V ID = 6 A, 3 A, 1.5 A VGS = 4.5 V ID = 6 A, 3 A, 1.5 A 10 V VGS 20 30 Gate-source voltage Drain-source on resistance RDS (ON) (mΩ) Pulse test 80 4V 0 0 40 80 Ambient temperature 120 Ta 0 0 160 (°C) 4 8 12 Total gate charge 5 16 Qg 20 24 0 28 (nC) 2004-07-06 TPC6001 rth − tw rth (°C/W) 300 Transient thermal impedance 1000 30 Device mounted on a glassepoxy board (b) (Note 2b) 100 Device mounted on a glassepoxy board (a) (Note 2a) 10 3 1 0.3 Single pulse 0.1 0.001 0.01 1 0.1 Pulse 10 100 1000 tw (s) Safe operating area 100 ID max (pulse)* 30 1 ms* Drain current ID (A) 10 10 ms* 3 1 0.3 0.1 0.03 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature 0.01 0.01 0.03 0.1 0.3 VDSS max 1 Drain-source voltage 3 VDS 10 30 100 (V) 6 2004-07-06 TPC6001 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06