TOSHIBA TPC6101

TPC6101
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
TPC6101
Notebook PC Applications
Portable Equipment Applications
Unit: mm
·
Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.)
·
High forward transfer admittance: |Yfs| = 8.2 S (typ.)
·
Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
·
Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V,
ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Drain-gate voltage (RGS = 20 kW)
VDGR
-20
V
Gate-source voltage
VGSS
±12
V
ID
-4.5
DC
(Note 1)
Drain current
Pulse
(Note 1)
(t = 5 s)
Drain power dissipation
(Note 2a)
(t = 5 s)
Drain power dissipation
(Note 2b)
A
IDP
-18
PD
2.2
W
PD
0.7
W
EAS
3.3
mJ
Avalanche current
IAR
-2.25
A
EAR
0.22
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
(Note 4)
Thermal Characteristics
Characteristics
Symbol
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Single pulse avalanche energy (Note 3)
Repetitive avalanche energy
JEDEC
(Note 2b)
Max
Circuit Configuration
6
5
4
1
2
3
Unit
Marking (Note 5)
Rth (ch-a)
56.8
°C/W
Rth (ch-a)
178.5
°C/W
S3A
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
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2002-01-17
TPC6101
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = -20 V, VGS = 0 V
¾
¾
-10
mA
V (BR) DSS
ID = -10 mA, VGS = 0 V
-20
¾
¾
V (BR) DSX
ID = -10 mA, VGS = 12 V
-8
¾
¾
-0.5
¾
-1.2
Drain-source breakdown voltage
Gate threshold voltage
Vth
VDS = -10 V, ID = -200 mA
RDS (ON)
VGS = -2 V, ID = -2.2 A
¾
110
180
RDS (ON)
VGS = -2.5 V, ID = -2.2 A
¾
75
100
RDS (ON)
VGS = -4.5 V, ID = -2.2 A
¾
48
60
Forward transfer admittance
|Yfs|
VDS = -10 V, ID = -2.2 A
4.1
8.2
¾
Input capacitance
Ciss
¾
830
¾
Reverse transfer capacitance
Crss
¾
300
¾
Output capacitance
Coss
¾
370
¾
¾
6
¾
¾
11
¾
¾
57
¾
¾
112
¾
¾
12
¾
¾
6
¾
¾
6
¾
Drain-source ON resistance
tr
Turn-ON time
ton
4.7 W
Switching time
Fall time
tf
Turn-OFF time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
ID = -2.2 A
VOUT
VGS 0 V
-5 V
RL = 4.5 W
Rise time
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDD ~
- -10 V
<
Duty = 1%, tw = 10 ms
VDD ~
- -16 V, VGS = -5 V,
ID = -4.5 A
V
V
mW
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Pulse drain reverse current
Forward voltage (diode)
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
¾
¾
¾
-18
A
¾
¾
1.2
V
VDSF
IDR = -4.5 A, VGS = 0 V
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4
25.4 ´ 25.4 ´ 0.8
Unit: (mm)
FR-4
25.4 ´ 25.4 ´ 0.8
Unit: (mm)
(a)
(b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = -2.25 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking “·” locates on the left lower side of parts number marking “S3A” indicates terminal
No.1.
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2002-01-17
TPC6101
ID – VDS
-5
-5 V
-3 V
-4 V
ID – VDS
-10
Common source
Ta = 25°C Pulse test
-2.5 V
-2.0 V
-1.9 V
-1.6 V
-2
-1
-0.4
-0.8
-1.2
Drain-source voltage
-1.6
VDS
-2.0 V
-4 V
-6
-1.8 V
-4
-1.6 V
-2
VGS = -1.4 V
0
0
0
0
-2.0
(V)
VGS = -1.4 V
-1
-2
(V)
(V)
Common source
Ta = 25°C
Pulse test
-0.8
VDS
(A)
Drain-source voltage
ID
Drain current
VDS
-5
VDS – VGS
-6
-4
-2
25°C
-0.5
-0.6
-2.2 A
-0.4
-1
-1.5
Gate-source voltage
-2
VGS
ID = -4.5 A
-0.2
Ta = -55°C
100°C
0
0
-1.1 A
0
0
-2.5
(V)
-2
(S)
30
-4
-6
Gate-source voltage
|Yfs| – ID
100
-8
VGS
-10
(V)
RDS (ON) – ID
1000
Common source
VDS = -10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Ta = -55°C
Drain-source on resistance
RDS (ON) (m9)
Forward transfer admittance |Yfs|
-4
-1
Common source
VDS = -10 V
Pulse test
-8
-3
Drain-source voltage
ID – VGS
-10
-2.2 V
-5 V
(A)
ID
-1.7 V
Drain current
ID
Drain current
-1.8 V
-3 V
-2.5 V
-8
(A)
-4
-3
Common source
Ta = 25°C Pulse test
-2.4 V
25°C
10
100°C
3
1
300
-2.0 V
100
-2.5 V
VGS = -4.5 V
30
0.3
0.1
-0.1
-0.3
-1
-3
Drain current
-10
ID
-30
10
-0.1
-100
(A)
-0.3
-1
-3
Drain current
3
-10
ID
-30
-100
(A)
2002-01-17
TPC6101
RDS (ON) – Ta
IDR – VDS
-100
180
(A)
ID = -2.2 A
Pulse test
140
-1.1 A
120
100
Common source
Ta = 25°C
Pulse test
Common source
Drain reverse current IDR
Drain-source on resistance
RDS (ON) (m9)
160
VGS = -2.0 V
-4.5 A
80
-2.2 A
-1.1 A
60
40 -2.5 V
20
0
-80
-1.1 A
-2.2 A -4.5 A
-30
-10
-4 V
-3
-2 V
-4.5 V
-40
0
40
120
80
-1
0
160
0.2
VGS = -0 V
-1 V
0.4
0.6
0.8
Drain-source voltage
Ambient temperature Ta (°C)
VDS
1
1.2
(V)
Vth – Ta
Capacitance – VDS
-2.0
10000
Gate threshold voltage Vth (V)
Common source
Capacitance C
(pF)
3000
1000
Ciss
Coss
300
Crss
100
30
Ta = 25°C
f = 1 MHz
VDS = -10 V
ID = -200 mA
Pulse test
-1.6
-1.2
-0.8
-0.4
VGS = 0 V
-3
-10
Drain-source voltage
VDS
-30
0
-80
-100
(V)
PD – Ta
Drain-source voltage
(1) DC
1
(2) t = 5 s
0.5
(2) DC
40
80
(W)
80
120
160
120
-16
-10
Common source
ID = -6 A
Ta = 25°C
Pulse test
-8
VGS
VDS
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
PD
Drain power dissipation
(V)
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
1.5
0
0
40
Dynamic input/output characteristics
-20
2
0
Ambient temperature Ta (°C)
2.5
(1) t = 5 s
-40
-12
-8
Ambient temperature Ta (°C)
VDD = -16 V
-4
0
0
160
-6
-8 V
VDS
-4
-2
2
4
6
8
10
12
14
16
(V)
-1
VGS
-0.3
Gate-source voltage
10
-0.1
0
18
Total gate charge Qg (nC)
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2002-01-17
TPC6101
rth - tw
1000
(°C/W)
300
Device mounted on a glassepoxy board (b) (Note 2b)
rth
100
Transient thermal impedance
30
Device mounted on a glassepoxy board (a) (Note 2a)
10
3
1
0.3
Single pulse
0.1
0.001
0.01
0.1
10
1
Pulse tw
100
1000
(s)
Safe operating area
-100
-30 ID max (pulse)*
(A)
-3
Drain current
ID
1 ms*
-10
10 ms*
-1
-0.3
-0.1
-0.03
-0.01
-0.003
*: Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature
-0.001
-0.01 -0.03
-0.1
-0.3
VDSS
max
-1
Drain-source voltage
-3
VDS
-10
-30
-100
(V)
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2002-01-17
TPC6101
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-01-17
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