TOSHIBA TPCA8103_06

TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCA8103
Lithium Ion Battery Applications
Notebook PC Applications
0.5±0.1
Unit: mm
0.4±0.1
0.05 M A
5
Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.)
High forward transfer admittance: |Yfs| =45S (typ.)
•
Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
•
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
0.15±0.05
4
1
5.0±0.2
0.05 S
S
Characteristics
Symbol
4
4.25±0.2
8
Rating
5 0.8±0.1
1,2,3：SOURCE
4：GATE
5,6,7,8：DRAIN
Unit
Drain-source voltage
VDSS
−30
V
JEDEC
―
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
JEITA
―
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
− 40
Pulsed (Note 1)
IDP
−120
PD
45
W
PD
2.8
W
PD
1.6
W
EAS
208
mJ
IAR
− 40
A
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
Drain power dissipation
(Tc=25°C)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25°C) (Note 4)
A
A
3.5±0.2
0.6±0.1
1
Absolute Maximum Ratings (Ta = 25°C)
0.595
0.166±0.05
6.0±0.3
•
•
5.0±0.2
Small footprint due to small and thin package
0.95±0.05
•
1.27
8
1.1±0.2
Portable Equipment Applications
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
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2006-11-16
TPCA8103
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
(Tc=25°C)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-c)
2.78
°C/W
Rth (ch-a)
44.6
°C/W
Rth (ch-a)
78.1
°C/W
Marking (Note 5)
TPCA
8103
Type
※
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 24 V， Tch = 25°C (initial)， L = 100µH， RG = 25 Ω， IAR = − 40 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ○ on lower left of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
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TPCA8103
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V
⎯
⎯
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 20 V
−13
⎯
⎯
Vth
VDS = −10 V, ID = − 1 mA
−0.8
⎯
−2.0
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-ON time
ton
VGS = −4 V, ID = −20 A
⎯
5.2
6.8
VGS = −10 V, ID = −20 A
⎯
3.1
4.2
VDS = −10 V, ID = −20 A
22.5
45
⎯
VDS = −10 V, VGS = 0 V, f = 1 MHz
0V
VGS
−10 V
Switching time
Fall time
tf
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
ID = −20A
VOUT
RL = 0.8 Ω
Gate threshold voltage
4.7 Ω
Drain-source breakdown voltage
VDD ∼
− −15 V
<
Duty = 1%, tw = 10 µs
VDD ∼
− −24 V, VGS = −10 V,
ID = −40 A
⎯
7880
⎯
⎯
1340
⎯
⎯
1450
⎯
⎯
15
⎯
⎯
13
⎯
⎯
251
⎯
⎯
596
⎯
⎯
184
⎯
⎯
12
⎯
⎯
58
⎯
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
−120
A
⎯
⎯
1.2
V
VDSF
IDR = −40 A, VGS = 0 V
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TPCA8103
ID – VDS
−3
−2.8
−10
Drain current
ID
−6
−80
−8
Common source
Ta = 25°C
Pulse test
−2.6
−30
(A)
(A)
−40
Common source
Ta = 25°C
Pulse test
−10
−2.4
−20
−2.2
ID
−4
ID – VDS
−100
−60
Drain current
−50
−40
−10
−6
−8
−3.2
−4
−3.1
−3.0
−2.8
−20
−2.6
VGS = −2 V
0
0
−1
−2
−3
Drain-source voltage
−4
0
0
−5
VDS (V)
VGS = −2.4 V
−0.2
−0.4
Drain-source voltage
ID – VGS
(V)
Common source
VDS = −10 V
Pulse test
100
−20
−2
−4
−6
Gate-source voltage
−8
VGS
−0.3
−0.2
−10
−20
ID = −40 A
−0.1
0
0
−10
(V)
−4
−8
−12
Gate-source voltage
−16
VGS
−20
(V)
RDS (ON) – ID
100
100
Ta = −55°C
Drain-source ON resistance
RDS (ON) (mΩ)
(S)
Forward transfer admittance ⎪Yfs⎪
Common source
Ta = 25°C
Pulse test
−0.4
|Yfs| – ID
25
100
10
1
0.1
−0.1
VDS (V)
VDS
25
Drain-source voltage
ID
Drain current
(A)
Ta = −55°C
0
0
−1.0
−0.5
−80
−40
−0.8
VDS – VGS
−100
−60
−0.6
Common source
VDS = −10 V
Pulse test
−1
Drain current
−10
10
−10
1
0.1
−0.1
−100
ID (A)
VGS = −4 V
Common source
Ta = 25°C
Pulse test
−1
Drain current
4
−10
−100
ID (A)
2006-11-16
TPCA8103
RDS (ON) – Ta
IDR – VDS
−1000
20
Drain reverse current IDR (A)
Drain-source ON resistance
RDS (ON) (mΩ)
Common source
Pulse test
15
10
ID = −40 A, −20 A, −10 A
VGS = −4 V
5
−5
−10
−3
−10
−1
−40
0
40
80
Ambient temperature
Ta
120
−1
Common source
Ta = 25°C
Pulse test
−0.1
0
160
(°C)
0.2
0.4
Capacitance – VDS
0.8
1.0
1.2
VDS (V)
Vth – Ta
−2.0
Vth (V)
Ciss
10000
Gate threshold voltage
C
(pF)
0.6
Drain-source voltage
100000
Capacitance
VGS = 0 V
ID = −40 A, −20 A, −10 A
−10 V
0
−80
−100
Coss
1000
Common source
VGS = 0 V
Crss
f = 1 MHz
Ta = 25°C
100
−0.1
−1
−10
Drain-source voltage
−100
Common source
VDS = −10 V
−1.2
−0.8
−0.4
0
−80
VDS (V)
ID = −1 mA
Pulse test
−1.6
−40
0
40
Ambient temperature
80
Ta
120
160
(°C)
Dynamic input/output characteristics
−30
−30
Ta = 25°C
VDS
Pulse test
−20
−20
−12
−12
−10
−10
−6
VDD = −24 V
−6
VGS
0
0
40
80
120
160
200
Gate-source voltage
(V)
VDS
Drain-source voltage
ID = −13 A
VDD = −24 V
VGS (V)
Common source
0
240
Total gate charge Qg (nC)
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2006-11-16
TPCA8103
TRANSIENT THERMAL IMPEDANCE
rth (℃/W)
rth – tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b)
100
(Note 2b)
(1)
(3) Tc=25℃
10
(3)
1
SINGLE PULSE
0.1
0.001
0.01
0.1
1
10
PULSE WIDTH
tw
100
PD – Ta
3
PD – Tc
(1)
(Note 2a)
DRAIN POWER DISSIPATION
PD (W)
DRAIN POWER DISSIPATION
PD (W)
50
(1)Device mounted on a
glass-epoxy board(a)
2.5
(2)Device mounted on a
glass-epoxy board(b)
(Note 2b)
ｔ＝10s
2
(2)
1.5
1
0.5
0
0
40
1000
(s)
80
120
AMBIENT TEMPERATURE
30
20
10
0
160
Ta
40
(°C)
0
40
80
CASE TEMPERATURE
120
Tc
160
(°C)
SAFE OPERATING AREA
DRAIN CURRENT ID (A)
1000
ID max (PULSED) *
100
t=1ms
t=10ms
10
ID max (CONTINUOUS) *
DC
※ SINGLE NONREPETITIVE PULSE
1
Tc=25℃
CURVES
LINEARLY
MUST
WITH
BE
IN
VDSS max
TEMPERATURE.
0.1
0.1
DERATED
INCREASE
1
10
DRAIN-SOURCE VOLTAGE
100
VDS
(V)
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2006-11-16
TPCA8103
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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