TPD1039F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1039F Low-Side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1039F is a monolithic power IC intended for low-side load switching applications. The output has a vertical MOSFET, and the input can be directly driven from CMOS or TTL logic (e.g., an MPU). The TPD1039F provides intelligent protection functions. Features • A structure that incorporates control circuitry and a vertical power MOSFET on a single chip. • Can be directly driven from a microprocessor, a CMOS logic IC, etc. • Overvoltage, overtemperature and overcurrent protections • Low ON-resistance: RDS (ON) = 0.25Ω(max) (@VIN = 5 V, ID = 1 A, Tch = 25°C) • Housed in the 8-pin SOP package and supplied in embossed carrier tape. Pin Assignment (top view) SOP8-P-1.27A Weight: 0.08 g (typ.) Marking SOURCE 1 8 DRAIN SOURCE 2 7 DRAIN SOURCE 3 6 DRAIN IN 4 5 DRAIN TPD1039 F Part No. (or abbreviation code) Lot No. (weekly code) A line indicates Lead (Pb) -Free Finish (TOP VIEW) Note: This product has a MOS structure and is sensitive to electrostatic discharge. 1 2008-03-18 TPD1039F Block Diagram DRAIN IN Overtemperature Detection/Protection Overcurrent Detection/Protection SOURCE Pin Description Pin No. Symbol 1, 2, 3 SOURCE 4 IN 5 ,6, 7, 8 DRAIN Pin Description Source (ground) pins. Input pin. This pin is connected to a pull-down resistor internally, so that even if the input is open-circuited, the output never turns on inadvertently. Drain pins. The output current is limited to 5 A (typ.) even if an excessive current flows into a device due to an in-rush current of a lamp or load short-circuit. Timing Chart 5°C hysteresis (typ.) Input signal Overcurrent detection Channel temperature Overtemperature detection 125°C (min) V(CL)DSS VDD Drain-source voltage Inductive load drive Drain current Normal Current limiting (limiter) Active clamp Thermal shutdown Truth Table VIN VDS Output State L H Off H L On L H Off H H Current limiting(limiter) L H Off H H Off Operating State Normal Load short-circuited Overtemperature 2 2008-03-18 TPD1039F Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDS (DC) 45 V Drain current ID (DC) 1.5 A Input voltage VIN −0.5 to 6 V Drain-source voltage Power dissipation (Note 2-a) PD(1) 1.1 W Power dissipation (Note 2-b) PD(2) 0.425 W EAS 20 mJ IAR 1.5 A EAR 0.11 mJ Operating temperature Topr −40 to 85 °C Channel temperature Tch 150 (Note 5) °C Storage temperature Tstg −55 to 150 °C Single pulse active clamp capability (Note 3) Active clamp current Repetitive active clamp capability (Note 2-a) (Note 4) Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rating 113.5 (Note 2-a) Rth(ch-a) 294.0 (Note 2-b) Unit °C /W Note 2: 2-a: glass epoxy board (a) 2-b: glass epoxy board (b) FR-4 25.4×25.4×0.8 (unit: mm) FR-4 25.4×25.4×0.8 (unit: mm) Note 3: Active clamp capability (single pulse) test condition VDD = 25 V, Tch = 25°C (initial), L = 10 mH, IAR = 1.5 A, RG = 25Ω Note 4: Repetitive rating: Pulse width limited by maximum channel temperature Note 5: Overtemperature protection is tripped at a channel temperature of 125°C. Ensure that the channel temperature, Tch, does not exceed 125°C under the worst-case conditions. 3 2008-03-18 TPD1039F Electrical Characteristics (Tch = 25°C) Symbol Test Circuit V (CL)DSS - High-level input voltage VIH Low-level input voltage VIL Characteristics Drain-source clamp voltage Test Condition Min Typ. Max Unit VIN = 0 V, ID = 1 mA 45 - - V 1 VDS = 10 to 40 V, ID ≥ 1 A 3.5 - 6 1 VDS = 10 to 40 V, ID ≤ 10μA - - 0.8 - IDSS - VIN = 0 V, VDS = 40 V IIH - VIN = 5 V, at normal operation Drain-source ON-resistance RDS(ON) - VIN = 5 V, ID = 1 A Protective circuit operation input Voltage range VIN(opr) - Overtemperature detection (Note 6) TOT 2 Overcurrent detection IOC 3 Drain cut-off current High-level input current ton Switching times toff Drain-source diode forward Voltage VDSF 4 - V - 10 μA - 400 μA - - 0.25 Ω 3.5 - 6 V VIN = 5 V, VDD = 12 V 125 - - °C VIN = 5 V, VDS = 24 V - 5 - A - VDD = 24 V, VIN = 0 V/5 V, - 15 - RL = 24Ω - 45 - VIN = 0 V, IDR = 1.5 A - 0.9 1.8 μs V Note 6: Overtemperature protection is tripped at a channel temperature of 125°C. Ensure that the channel temperature, Tch, does not exceed 125°C under the worst-case conditions. This feature is intended to protect the device against damage. The device reliability is not guaranteed if the device persists to remain overtemperature protection mode. Test Circuit 1 H-level input voltage, L-level input voltage measuring circuit Test circuit Measured waveforms ID ID DRAIN IN TPD1039F VIN 1A VDD = 10 to 40 V SOURCE 10μA VIL VIH VIN Test Circuit 2 Overtemperature detection measuring circuit Measured waveforms Ta increase RL = 1.2kΩ DRAIN IN VIN = 5 V TOT Ta TPD1039F Ta decrease VDD = 12 V 12 V 11 V SOURCE hysteresis Test circuit VDS 1V 0V 4 2008-03-18 TPD1039F Test Circuit 3 Overcurrent detection circuit Test circuit Measured waveforms ≤ 0.1μs ID 90% A DRAIN IN P.G. ≤ 0.1μs 5V 90% VIN TPD1039F VDD = 24 V 0V 10% 10% IOC SOURCE VIN ID 0A Test Circuit 4 Switching time measuring circuit Test circuit Measured waveforms ≤ 0.1μs RL = 24Ω 90% DRAIN IN P.G. VIN ≤ 0.1μs 5V 90% VIN TPD1039F 0V VDD = 24 V 10% 10% 90% SOURCE 90% 24 V VDS 0V 10% tr ton 5 10% tf toff 2008-03-18 TPD1039F ID – VDS V (CL) DSS – Tch 70 5 4.5 4 5.5 1.6 ドレイン･ソース間クランプ電圧 Drain-source clamp voltage V (CL) DSS (V) V(CL)DSS (V) (A) ドレイン電流 Drain current IIDD (A) 2.0 6 VIN = 3.5 V 1.2 0.8 0.4 0 0 0.2 0.3 0.4 50 40 30 20 VIN = 0 V 10 ID = 1 mA Tch = 25°C 0.1 60 0 −80 0.5 Drain-source voltage VDS ドレイン･ソース間電圧 VDS(V)(V) −40 0 40 80 120 チャネル温度 Tch T (°C) Channel temperature ch (°C) ID – VIN IIN –VIN 10 200 Tch = 25°C Input current IINIIN (μA) (μA) 入力電流 (A) IIDD (A) VDS = 10 V Drain current ドレイン電流 160 1 0.1 85 0.01 25 160 120 80 40 Tch = −40°C 0.001 0 1 2 3 4 0 0 5 Input voltageVINVIN(V) (V) 入力電圧 2 IIH – Tch 8 RDS (ON) – VIN Tch = 25°C VIN = 5 V ドレイン･ソース間オン抵抗 Drain-source ON-resistance RDS (ON) (Ω) RDS(ON) (Ω) normal 250 operation 200 150 100 50 0 −80 6 3 300 High-level input current IIH (μA) 入力電流 IIH (μA) 4 Input voltageVIN VIN(V) (V) 入力電圧 −40 0 40 80 120 ID = 1 A 2 1 0 0 160 チャネル温度 Tch T(°C) Channel temperature ch (°C) 2 4 6 8 入力電圧 Input voltageVINVIN(V) (V) 6 2008-03-18 TPD1039F RDS (ON) – ID RDS (ON) – Tch 0.5 0.3 ID =1 A Tch = 25°C Drain-source ON-resistance ドレイン･ソース間オン抵抗 RRDS (Ω) (ON) (Ω) DS(ON) Drain-source ON-resistance ドレイン･ソース間オン抵抗 RRDS (ON) (Ω) (Ω) DS(ON) VIN = 5 V 0.4 0.3 0.2 0.1 0 0.01 0.1 1 5 0.2 VIN = 6 V 0.1 0 −80 10 3.5 Drain current ID ドレイン電流 ID (A) (A) −40 0 40 80 IOC – VIN IOC – Tch 10 Overcurrent detection 過電流検出値 IOC IOC (A) (A) 過電流検出値 IOC IOC (A) (A) Overcurrent detection Tch = 25°C 8 6 4 2 2 4 6 VDS = 24 V VIN = 5 V 8 6 4 2 0 −80 8 入力電圧 Input voltageVINVIN(V) (V) −40 0 80 120 160 ton,toff,tr,tf – VIN 180 80 VDD = 24 V Switching times ton,toff,tr,t スイッチングタイム (μs) f (μs) (°C ) 40 チャネル温度 Tch (°C) Channel temperature Tch (°C) TOT – VIN 過熱検出値detection TOT (°C) Overtemperature TOT 160 Channel temperature チャネル温度 Tch T(°C) ch (°C) 10 0 0 120 160 140 120 100 0 2 4 6 RL = 24Ω Tch = 25°C 60 toff 40 ton 20 tr 0 0 8 入力電圧 Input voltageVIN VIN(V) (V) tf 2 4 6 8 入力電圧 Input voltage VIN VIN (V) (V) 7 2008-03-18 TPD1039F PD – Ta Power dissipation D (W ) 許容損失 PD P (W) 1.6 (1)ガラスエポキシ基板(a)実装 (1)Mount on glass epoxy board (a) (2)ガラスエポキシ基板(b)実装 (2)Mount on glass epoxy board (b) 1.2 (1) 0.8 (2) 0.4 0 -40 0 40 80 120 160 周囲温度 Ta (℃) Ta (°C) Ambient temperature rth(ch-a) – tW 1000 Transient thermal resistance rth(ch-a) (°C/W ) (1)Mount on glass epoxy board (a) (2) (2)Mount on glass epoxy board (b) Measuring single pulse, Ta = 25°C 100 (1) 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse widthtw tW(s) (s) パルス幅 8 2008-03-18 TPD1039F Package Dimensions Weight: 0.08 g (typ.) 9 2008-03-18 TPD1039F RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2008-03-18