TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 8.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V JEDEC ― (Note 1) ID 17 Pulsed (Note 1) IDP 68 A JEITA ― PD 1.9 W PD 1.0 W EAS 188 mJ IAR 17 A EAR 0.15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration Note: For Notes 1 to 4, refer to the next page. 8 7 6 5 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-09-16 TPC8039-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8039 H Part No. (or abbreviation code) Lot No. A line indicates lead(Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = 17 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year: sequential number up to 52 or 53) Year of manufacture (The last digit of the year) 2 2008-09-16 TPC8039-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ Vth VDS = 10 V, ID = 0.5 mA 1.3 ⎯ 2.3 VGS = 4.5 V, ID = 8.5 A ⎯ 4.9 6.9 VGS = 10 V, ID = 8.5 A ⎯ 4.1 6.0 VDS = 10 V, ID = 8.5 A 30 60 ⎯ ⎯ 2600 3400 ⎯ 170 270 ⎯ 490 ⎯ ⎯ 1.0 1.5 ⎯ 3.5 ⎯ ⎯ 11 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-on time ton Fall time toff 7.3 ⎯ ⎯ 41 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 24 V, VGS = 10 V, ID = 17 A ⎯ 36 ⎯ Gate-source charge 1 Qgs1 VDD ≈ 24 V, VGS = 5 V, ID = 17 A ⎯ 18 ⎯ ⎯ 7.6 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 4.8 ⎯ Gate switch charge QSW ⎯ 8.5 ⎯ VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs VDD ≈ 24 V, VGS = 10 V, ID = 17 A V mΩ S pF Ω ns ⎯ tf Turn-off time 0V 4.7 Ω Switching time ID = 8.5 A VOUT 10 V RL = 1.67Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 68 A ⎯ ⎯ −1.2 V VDSF IDR = 17 A, VGS = 0 V 3 2008-09-16 TPC8039-H 10, 8, 6, 5, 4.5, 4 5 (A) ID 3 2.4 Drain current (A) ID 2.45 2 VGS = 2.3 V 1 Common source Ta = 25°C Pulse test 0 0.2 0.4 2.6 2.65 4 0 ID – VDS 10 2.5 2.55 Drain current 10, 8, 6, 5, 4.5, 4 ID – VDS 0.6 Drain-source voltage 0.8 VDS 8 2.55 6 2.5 Common source Ta = 25°C Pulse test 4 2.4 2 VGS = 2.2 V 0 0 1 (V) 0.4 Drain-source voltage ID – VGS 25 1 2 3 4 Gate-source voltage VGS 0.2 0.1 ID = 17 A 8.5 4.3 0 0 5 (V) 4 6 8 VGS 10 (V) RDS (ON) – ID 10 Common source VDS = 10 V Pulse test Drain-source ON-resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance 2 Gate-source voltage ⎪Yfs⎪ – ID 100 Ta = −55°C 100 10 25 1 0.1 0.1 (V) Common source Ta = 25℃ Pulse test (V) VDS Drain-source voltage ID Drain current Ta = −55°C 100 10 1000 VDS 2 VDS – VGS 20 0 0 1.6 0.3 Common source VDS = 10 V Pulse test (A) 30 1.2 0.8 1 Drain current 10 ID 4.5 VGS = 10 V Common source Ta = 25 ℃ Pulse test 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2008-09-16 TPC8039-H RDS (ON) – Ta IDR – VDS 10 100 4.5 IDR ID = 4.3, 8.5 A 6 ID = 4.3, 8.5, 17 A VGS = 4.5 V 4 VGS = 10 V 2 0 −80 −40 0 40 Ambient temperature 10 (A) 17 A 8 Drain reverse current 80 120 Ta 3 1 10 VGS = 0 V Common source Ta = 25°C Pulse test 1 0 160 −0.2 (°C) −0.4 Drain-source voltage Capacitance – VDS Vth (V) Gate threshold voltage Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 120 1 0.5 Common source VDS = 10 V ID = 0.5 mA Pulse test −40 2 40 (V) VDS Drain-source voltage 1.5 (2) 0.5 40 80 Ambient temperature 40 Ta 160 (°C) Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) t=10 s (1) 0 Ambient temperature VDS (V) PD – Ta (W) 80 1.5 0 −80 100 10 2 120 Ta (°C) 12 30 20 VDS 12 V 10 4 10 20 Total gate charge 5 8 VDD = 6 V 24 V 0 0 160 16 Common source ID = 17 A Ta = 25°C Pulse test (V) 1 Drain-source voltage PD (V) 30 Qg VGS Capacitance C (pF) 1000 10 0.1 Drain power dissipation VDS −1.0 2.5 Ciss 0 0 −0.8 Vth – Ta 10000 1.0 −0.6 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 40 (nC) 2008-09-16 TPC8039-H rth – tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 0.1 0.01 0.0001 Single - pulse 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 (s) Safe operating area 100 ID max (Pulse) * t =1ms * Drain current ID (A) 1000 10 ms * 10 1 * Single – pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 1 Drain-source voltage 10 VDS 100 (V) 6 2008-09-16 TPC8039-H RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2008-09-16