Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE (SAT), = 1.0V @ Ic / Ib = 1A / 0.2A Features Ordering Information Built-in free-wheeling diode makes efficient anti Part No. Packing Package saturation operation. TSC5302DCH Tube TO-251 No need to interest an hfe value because of low variable TSC5302DCP T&R TO-252 storage-time spread even though comer spirit product. Block Diagram Low base drive requirement. Suitable for half bridge light ballast applications. Structure Silicon triple diffused type. NPN silicon transistor with Diode Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 800V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 10 V IC 2 A Collector Current DC Pulse Base Current DC 4 IB Pulse o Collector Power Dissipation (Tc=25 C) TO-251 Operating Junction and Storage Temperature Range A 2 PD TO-252 Operating Junction Temperature 1 75 W 1.5 TJ +150 o C TSTG - 65 to +150 o C Thermal Resistance Junction to Case RΘjc 6.25 o Thermal Resistance Junction to Ambient Note: 1. Single pulse, Pw = 300uS, Duty <= 2% RΘja 100 o TS5302D Preliminary 1-1 2004/09 rev. A C/W C/W Preliminary Electrical Characteristics Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 1mA, IB = 0 BVCBO 800 -- -- V Collector-Emitter Breakdown Voltage IC = 5mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 10 -- -- V Collector Cutoff Current VCB = 500V, IE = 0 ICBO -- -- 10 uA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC / IB = 0.5A / 0.1A VCE(SAT)1 -- -- 0.4 V IC / IB = 1.0A / 0.25A VCE(SAT)2 -- -- 0.6 IC / IB = 0.5A / 0.1A VCB(SAT)1 -- -- 0.9 IC / IB = 1.0A / 0.25A VCB(SAT)2 -- -- 1.0 VCE = 5V, IC = 0.4A hFE 1 20 -- -- VCE = 5V, IC = 1A hFE 2 6 -- -- Base-Emitter Saturation Voltage DC Current Gain V Turn On Time VCC = 250V, IC = 1A, tON -- -- 0.5 uS Storage Time IB1 = IB2 = 0.2A, tp= 25uS tSTG -- 2.0 2.75 uS Fall Time Duty cycle < 1% tF -- -- 0.2 uS Fall Time IC = 1A tF -- -- 700 nS Forward Voltage IC = 1A Vf -- -- 1.4 V Doide Note : pulse test: pulse width <=300uS, duty cycle <=2% TS5302D Preliminary 2-2 2004/09 rev. A Preliminary Electrical Characteristics Curve Figure 1. Static Characteric Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Switching Time Figure 5. Safe Operating Area Figure 6. Power Derating TS5302D Preliminary 3-3 2004/09 rev. A Preliminary TO-252 Mechanical Drawing E J A A B C D E F TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.570 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 0.094 0.490 0.570 0.019 0.022 G H I J 1.460 0.520 5.340 1.460 F DIM I B G D C H 1.580 0.570 5.550 1.640 0.057 0.020 0.210 0.057 0.062 0.022 0.219 0.065 TO-251 Mechanical Drawing DIM TS5302D Preliminary 4-4 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX A A1 b C D D1 E e F 2.20 1.10 0.40 0.40 6.70 5.40 6.40 2.10 0.40 2.4 1.30 0.80 0.60 7.30 5.65 6.65 2.50 0.60 0.087 0.043 0.016 0.016 0.264 0.213 0.252 0.083 0.016 0.095 0.051 0.032 0.024 0.287 0.222 0.262 0.098 0.024 L L1 7.00 1.60 8.00 1.86 0.276 0.063 0.315 0.073 2004/09 rev. A Preliminary TS5302D Preliminary 5-5 2004/09 rev. A