TSM4539D Complementary Enhancement MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) N-Channel 30 P-Channel -30 ID (A) 28 @ VGS = 10V 6.5 42 @ VGS = 4.5V 5.0 65 @ VGS = -10V -4.2 90 @ VGS = -4.5V -3.5 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM4539DCS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel P-Channel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol N-CH Limit P-CH Limit Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current, VGS ID 6.5 -4.2 A Pulsed Drain Current, IDM 28 -20 A IS 2.5 -1.9 A PD 2.1 2.1 Drain-Source Diode Forward Current o Power Dissipation @ Ta = 25 C Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TJ, TSTG W 150 o -55 ~ +150 o C C Thermal Performance Parameter Symbol Junction to Ambient Thermal Resistance N-CH Limit RӨJA Junction to Lead Thermal Resistance RӨJL 62.5 40 P-CH Limit Unit 62.5 o 40 o C/W C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 5sec. c. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz. 1/4 Version: A12 TSM4539D Complementary Enhancement MOSFET Electrical Specifications (TA=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH 30 -30 1.0 -1.0 -------- --1.4 -1.5 ----23 50 35 82 --3.0 -3.0 ±100 ±10 1 -1 28 65 42 90 N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH ------------- 7 9.7 1.6 1.6 1.0 1.3 610 100 77 551 90 60 ------------- N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH N-CH P-CH ----------- 7 6.2 10 6.2 16 26 7 5.5 --- --------1.0 -1.3 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State a Resistance VGS =0V, ID = 250uA VGS =0V, ID =-250uA VDS =VGS, ID = 250µA VDS =VGS, ID =-250µA VGS = ±20V, VDS =0V VGS = ±20V, VDS =0V VDS =24V, VGS =0V VDS =-24V, VGS =0V VGS =10V, ID =6.5A VGS =-10V, ID =-4.2A VGS =4.5V, ID =5A VGS =-4.5V, ID =-3.5A BVDSS VGS(TH) IGSS IDSS RDS(ON) V V nA µA mΩ b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching N-Channel VDS =10V, ID =1A, VGS =10V Qg P-Channel VDS =-15V, ID =-5.2A, VGS =-10V N-Channel VDS =15V, VGS = 0V, f = 1.0MHz P-Channel VDS =-15V, VGS = 0V, f = 1.0MHz Qgs Qgd Ciss Coss Crss nC pF b Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Diode Forward Voltage N-Channel VDD =15V, ID = 1A, VGEN =10V, RG = 6Ω td(on) P-Channel VDD =-15V, ID = -1A, VGEN =-10V, RG = 6Ω td(off) IS =1 A, VGS = 0V IS =-1.9A, VGS = 0V tr tf VSD nS V Notes: a. Pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. 2/4 Version: A12 TSM4539D Complementary Enhancement MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R 3/4 SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Version: A12 TSM4539D Complementary Enhancement MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12