TSOP17..KA1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP17..KA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP17..KA1 is the standard IR remote control receiver series, supporting all major transmission codes. 12797 Features Special Features • Continuous data transmission possible (up to 2400 bps) • Suitable burst length ≥ 10 cycles/burst Block Diagram 2 25 kΩ VS 3 Input AGC Band Pass Demodulator OUT 1 PIN Control Circuit Document Number 82033 Rev. 10, 15-Oct-2002 GND Parts Table Part Carrier Frequency TSOP1730KA1 30 kHz TSOP1733KA1 33 kHz TSOP1736KA1 36 kHz TSOP1737KA1 36.7 kHz TSOP1738KA1 38 kHz TSOP1740KA1 40 kHz TSOP1756KA1 56 kHz Application Circuit Transmitter TSOPxxxx with TSALxxxx Circuit • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Low power consumption R1 = 100 Ω VS OUT GND +VS C1 = 4.7 µF µC VO GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 3.3 V by the external circuit. www.vishay.com 1 TSOP17..KA1 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VS - 0.3 to + 6.0 V IS 5 mA VO - 0.3 to + 6.0 V 5 mA Supply Voltage (Pin 2) Supply Current (Pin 2) Output Voltage (Pin 3) Output Current (Pin 3) IO Junction Temperature Storage Temperature Range Operating Temperature Range Tj 100 °C Tstg - 25 to + 85 °C Tamb - 25 to + 85 °C Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW Soldering Temperature t≤5s Tsd 260 °C Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Supply Current (Pin 2) Symbol Min Typ. Max Unit VS = 5 V, Ev = 0 Test condition ISD 0.8 1.2 1.5 mA VS = 5 V, Ev = 40 klx, sunlight ISH Supply Voltage (Pin 2) 1.5 VS Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 400 mA Output Voltage Low (Pin 3) IOSL = 0.5 mA, Ee = 0.7 mW/m2, f = fo, test signal see fig. 1 VOSL Irradiance (30 - 40 kHz) Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Ee min Irradiance (56 kHz) Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Ee min Irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max Directivity Angle of half transmission distance ϕ1/2 4.5 mA 5.5 d 35 V m 250 mV 0.35 0.5 mW/m2 0.4 0.6 mW/m2 30 W/m2 ± 45 deg Typical Characteristics (Tamb = 25°C unless otherwise specified) Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) t tpi * T * tpi w 10/fo is recommended for optimal function VO 16110 Output Signal 1) 2) VOH 7/f0 < td < 15/f0 tpi–5/f0 < tpo < tpi+6/f0 VOL tpo2 ) td1 ) 1.0 0.8 Document Number 82033 Rev. 10, 15-Oct-2002 Input Burst Duration 0.7 0.6 0.5 0.4 0.3 l = 950 nm, optical test signal, fig.1 0.2 0.1 0.0 0.1 t 16908 Figure 1. Output Function Output Pulse 0.9 t po – Output Pulse Width ( ms ) Ee 1.0 10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 ) Figure 2. Pulse Length and Sensitivity in Dark Ambient www.vishay.com 2 TSOP17..KA1 VISHAY Vishay Semiconductors Optical Test Signal 600 ms t 600 ms T = 60 ms 94 8134 Output Signal, ( see Fig.4 ) VO VOH VOL Ton 4.0 Ee min– Threshold Irradiance ( mW/m 2 ) Ee 3.0 2.5 2.0 1.5 Ambient, l = 950 nm 1.0 0.5 0.0 0.01 t Toff Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K) 3.5 Ee min– Threshold Irradiance ( mW/m 2 ) Ton ,Toff – Output Pulse Width ( ms ) 1.0 0.9 Ton 0.7 0.6 0.5 Toff 0.4 0.3 l = 950 nm, optical test signal, fig.3 0.2 0.1 0.0 0.1 1.0 10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 ) 16909 1.0 0.8 0.6 0.4 f = f0"5% Df ( 3dB ) = f0/10 16925 0.9 1.1 Figure 5. Frequency Dependence of Responsivity Rev. 10, 15-Oct-2002 f = fo 1.5 f = 10 kHz 1.0 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 DVsRMS – AC Voltage on DC Supply Voltage (mV) 2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 1.3 f/f0 – Relative Frequency Document Number 82033 100.00 Figure 7. Sensitivity vs. Supply Voltage Disturbances E e min– Threshold Irradiance ( mW/m 2 ) E e min / E e – Rel. Responsivity 1.2 0.0 0.7 10.00 2.0 16912 Figure 4. Output Pulse Diagram 0.2 1.00 Figure 6. Sensitivity in Bright Ambient Figure 3. Output Function 0.8 0.10 E – Ambient DC Irradiance (W/m2) 16911 94 8147 0.4 0.8 1.2 1.6 2.0 E – Field Strength of Disturbance ( kV/m ) Figure 8. Sensitivity vs. Electric Field Disturbances www.vishay.com 3 TSOP17..KA1 VISHAY Vishay Semiconductors 0q 1.0 10q 20q 30q Max. Envelope Duty Cycle 0.9 0.8 0.7 40q 0.6 1.0 0.5 0.9 50q 0.8 60q 0.4 0.3 f = 38 kHz, Ee = 2 mW/m2 0.2 70q 0.7 80q 0.1 0.0 10 30 50 70 90 110 Burst Length ( number of cycles / burst ) 16915 0.6 95 11340p2 Figure 12. Horizontal Directivity ϕx Ee min– Threshold Irradiance ( mW/m 2 ) Figure 9. Max. Envelope Duty Cycle vs. Burstlength 0q 0.6 0.5 10q 20q 30q Sensitivity in dark ambient 40q 0.4 1.0 0.3 0.9 50q 0.2 0.8 60q 0.1 0.7 70q 80q 0.0 –30 –15 0 15 30 45 60 75 90 Tamb – Ambient Temperature ( qC ) 16918 0.6 0.4 0.2 0 0.2 0.4 drel – Relative Transmission Distance Figure 13. Vertical Directivity ϕy Suitable Data Format 1.2 1.0 0.8 0.6 0.4 0.2 0 750 0.6 95 11339p2 Figure 10. Sensitivity vs. Ambient Temperature S ( l ) rel – Relative Spectral Sensitivity 0.6 0.4 0.2 0 0.2 0.4 drel – Relative Transmission Distance 850 94 8408 950 1050 1150 l – Wavelength ( nm ) Figure 11. Relative Spectral Sensitivity vs. Wavelength Document Number 82033 Rev. 10, 15-Oct-2002 The circuit of the TSOP17..KA1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). • Burst length should be 10 cycles/burst or longer. • After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. • For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the www.vishay.com 4 TSOP17..KA1 VISHAY Vishay Semiconductors IR Signal data stream. This gap time should have at least same length as the burst. • Up to 1400 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, R-2000 Code, Sony Format (SIRCS). When a disturbance signal is applied to the TSOP17..KA1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occure. Some examples for such disturbance signals which are suppressed by the TSOP17..KA1 are: • DC light (e.g. from tungsten bulb or sunlight) • Continuous signal at 38 kHz or at any other frequency • Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below). IR Signal from fluorescent lamp with low modulation 0 5 16920 10 15 20 Time ( ms ) Figure 14. IR Signal from Fluorescent Lamp with low Modulation Document Number 82033 Rev. 10, 15-Oct-2002 www.vishay.com 5 TSOP17..KA1 VISHAY Vishay Semiconductors Package Dimensions in mm 12783 Document Number 82033 Rev. 10, 15-Oct-2002 www.vishay.com 6 TSOP17..KA1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82033 Rev. 10, 15-Oct-2002 www.vishay.com 7