PANASONIC UN2222

Transistors with built-in Resistor
UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor
0.65±0.15
1.45
0.95
1.5 –0.05
1
0.95
3
+0.1
0.4 –0.05
+0.2
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1.9±0.2
2.9 –0.05
■ Features
●
+0.25
0.65±0.15
For digital circuits
●
Unit: mm
+0.2
2.8 –0.3
2
●
●
■ Absolute Maximum Ratings
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
500
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
■ Electrical Characteristics
Parameter
Emitter
cutoff
current
Internal Connection
C
R1
B
R2
E
Conditions
min
typ
max
Unit
ICBO
VCB = 50V, IE = 0
1
µA
ICEO
VCE = 50V, IB = 0
1
µA
IEBO
VEB = 6V, IC = 0
VCBO
IC = 10µA, IE = 0
50
V
VCEO
IC = 2mA, IB = 0
50
V
UN2221
5
UN2222
2
UN2223/2224
mA
1
Collector to base voltage
Collector to emitter voltage
Forward UN2221
current
UN2222
transfer
ratio
UN2223/2224
40
hFE
VCE = 10V, IC = 100mA
50
60
Collector to emitter saturation voltage
VCE(sat)
IC = 100mA, IB = 5mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = 5V, VB = 3.5V, RL = 500Ω
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
Input
resistance
EIAJ:SC-59
Mini Type Package
(Ta=25˚C)
Symbol
Collector cutoff current
+0.1
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
0.8
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
+0.2
Marking Symbol
9A
9B
9C
9D
0 to 0.1
●
UN2221
UN2222
UN2223
UN2224
1.1 –0.1
●
0.16 –0.06
■ Resistance by Part Number
0.25
4.9
V
0.2
200
UN2221/2224
V
V
MHz
2.2
UN2222
R1
(–30%)
4.7
0.8
1.0
UN2223
(+30%)
kΩ
10
Resistance ratio
UN2224
R1/R2
1.2
0.22
1
Transistors with built-in Resistor
UN2221/2222/2223/2224
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN2221
IC — VCE
VCE(sat) — IC
IB=1.0mA
Ta=25˚C
Collector current IC (mA)
250
0.9mA
0.8mA
200
0.7mA
0.6mA
150
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
0
0
2
4
6
8
10
Collector to emitter saturation voltage VCE(sat) (V)
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
12
1
200
25˚C
100
3
10
30
100
300
1
1000
3
IO — VIN
16
12
8
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
–25˚C
10000
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
4
3
0
0.1
0.3
1
3
10
Collector to base voltage
2
300
0
Cob — VCB
20
VCE=10V
0.01
Collector to emitter voltage VCE (V)
24
hFE — IC
400
Forward current transfer ratio hFE
300
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
Transistors with built-in Resistor
UN2221/2222/2223/2224
Characteristics charts of UN2222
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
250
IB=1.0mA
0.9mA
200
0.8mA
0.7mA
150
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
VCE=10V
0.01
0
0
2
4
6
8
10
10
3
30
100
100
–25˚C
50
300
1000
1
3
6
4
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
Output current IO (µA)
8
10
Collector current IC (mA)
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
10
25˚C
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
12
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
hFE — IC
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
300
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN2223
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
160
120
0.7mA
0.6mA
0.5mA
80
0.4mA
0.3mA
40
0.2mA
0.1mA
hFE — IC
IC/IB=10
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
Ta=75˚C
VCE=10V
25˚C
150
100
–25˚C
50
0
0.01
0
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
1
3
10
30
100
300
Collector current IC (mA)
1000
1
3
10
30
100
300
1000
Collector current IC (mA)
3
Transistors with built-in Resistor
UN2221/2222/2223/2224
Cob — VCB
IO — VIN
10000
10
8
6
4
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
12
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN2224
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
250
IB=1.0mA
200
0.9mA
0.8mA
150
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
100
0
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
2
4
6
8
10
12
3
–25˚C
50
30
100
300
1
1000
3
6
4
30
100
300
1000
VIN — IO
1000
VO=5V
Ta=25˚C
3000
300
1000
100
Input voltage VIN (V)
8
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
10
10
10000
f=1MHz
IE=0
Ta=25˚C
25˚C
100
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
VCE=10V
0.01
0
300
100
30
10
VO=0.2V
Ta=25˚C
30
10
3
1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
4
hFE — IC
200
Forward current transfer ratio hFE
300
30
100
VCB (V)
1
0.4
0.3
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.1
0.1
0.3
1
3
10
30
Output current IO (mA)
100