Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 ■ Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● UN4111 UN4112 UN4113 UN4114 UN4115 UN4116 UN4117 UN4118 UN4119 UN4110 UN411D UN411E UN411F UN411H UN411L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ 1 (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ ■ Absolute Maximum Ratings 2 3 2.0±0.2 15.6±0.5 marking ■ Resistance by Part Number 0.7±0.1 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 C B R2 E (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Emitter cutoff current Conditions min typ Unit ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA UN4111 – 0.5 UN4112/4114/411E/411D – 0.2 UN4113 – 0.1 UN4115/4116/4117/4110 IEBO VEB = –6V, IC = 0 – 0.01 UN411F/411H –1.0 UN4119 –1.5 UN4118/411L mA –2.0 Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V UN4111 Forward current transfer ratio 35 UN4112/411E 60 UN4113/4114 80 UN4115*/4116*/4117*/4110* hFE VCE = –10V, IC = –5mA UN411F/411D/4119/411H 160 20 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level UN4113 UN411D VOL UN411E Transition frequency – 0.25 –4.9 – 0.2 VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2 VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 VCC = 5V, VB = –6V, RL = 1kΩ fT V – 0.2 VCB = –10V, IE = 1mA, f = 200MHz 80 UN4111/4114/4115 10 UN4112/4117 22 MHz 47 UN4116/411F/411L (–30%) R1 4.7 UN4118 0.51 UN4119 1 UN411H Resistance ratio V V VCC = –5V, VB = –2.5V, RL = 1kΩ UN4113/4110/411D/411E Input resistance 460 30 UN4118/411L (+30%) 2.2 UN4111/4112/4113/411L 0.8 1.0 UN4114 0.17 0.21 0.25 UN4118/4119 0.08 0.1 0.12 UN411D R1/R2 UN411E 1.2 3.7 4.7 5.7 1.7 2.14 2.6 UN411F 0.37 0.47 0.57 UN411H 0.17 0.22 0.27 * hFE rank classification (UN4115/4116/4117/4110) 2 max Rank Q R S hFE 160 to 260 210 to 340 290 to 460 kΩ UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Common characteristics chart PT — Ta Total power dissipation PT (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN4111 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –120 –0.8mA –0.7mA –100 –0.6mA –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –3 –10 –30 25˚C 120 –25˚C 80 40 0 –1 –100 –3 4 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –1 Ta=75˚C VCE= –10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE –160 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 3 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN4112 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –140 –120 –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –10 –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –3 VCE= –10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UN4113 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) Ta=25˚C –0.9mA –0.8mA –0.7mA –0.6mA –120 –0.5mA –100 –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 4 –12 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE= –10V Forward current transfer ratio hFE IB=–1.0mA –140 Collector to emitter saturation voltage VCE(sat) (V) –160 Ta=75˚C 300 25˚C 200 –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB IO — VIN 4 3 2 –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 VIN — IO –10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN4114 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –140 IB=–1.0mA –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA –20 Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –1 –3 –10 –10000 –30 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO VO=–5V Ta=25˚C –1000 –3000 –300 –1000 –100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 200 IO — VIN f=1MHz IE=0 Ta=25˚C 5 300 Collector current IC (mA) Cob — VCB 6 VCE= –10V –25˚C –0.01 –0.1 –0.3 –12 hFE — IC 400 Forward current transfer ratio hFE –160 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –30 –10 –3 –1 1 –0.3 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 5 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN4115 IC — VCE VCE(sat) — IC –100 IB=–1.0mA Collector current IC (mA) –140 –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –0.4mA –80 –0.3mA –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN4116 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 6 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE –160 –100 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB IO — VIN –10000 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 Collector to base voltage VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN4117 IC — VCE VCE(sat) — IC –100 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Collector current IC (mA) –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –3 –10 200 Ta=75˚C 25˚C 100 –25˚C 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –120 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 7 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN4118 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN4119 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –80 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 8 –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 160 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN4110 IC — VCE VCE(sat) — IC –100 –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –12 Collector to emitter voltage VCE (V) –3 –10 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 9 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN411D IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –20 –0.1mA –10 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 0 –12 Collector to emitter voltage VCE (V) –1 –30 25˚C –25˚C 80 40 0 –1 –100 Ta=75˚C 120 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Collector to emitter saturation voltage VCE(sat) (V) –60 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –1.5 –100 Collector to base voltage VCB (V) –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN411E IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –20 –0.2mA –0.1mA –10 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 10 –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 400 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Collector to emitter saturation voltage VCE(sat) (V) –60 –100 300 200 Ta=75˚C 100 0 –1 25˚C –25˚C –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –1.5 –100 –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN411F IC — VCE VCE(sat) — IC Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector current IC (mA) –200 –160 –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 –10000 –30 Ta=75˚C 25˚C 80 –25˚C 40 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –3 120 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE –240 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 11 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN411H IC — VCE VCE(sat) — IC –120 –80 IB=–0.5mA –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 IC/IB=10 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 Collector to emitter voltage VCE (V) –3 –30 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –0.1 –0.3 –100 –300 –1000 –1 –3 –10 –30 –100 Collector current IC (mA) VIN — IO –100 f=1MHz IE=0 Ta=25˚C 4 3 2 VO=–0.2V Ta=25˚C –10 Input voltage VIN (V) 5 –10 VCE=–10V Collector current IC (mA) Cob — VCB 6 240 Forward current transfer ratio hFE Collector current IC (mA) –100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Collector output capacitance Cob (pF) hFE — IC –100 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UN411L IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 –160 IB=–1.0mA –120 –0.8mA –0.6mA –80 –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 12 –12 hFE — IC –30 –10 –3 –1 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –1 240 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 200 160 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB VIN — IO –100 f=1MHz IE=0 Ta=25˚C 5 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 VO= –0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 13