Transistors with built-in Resistor UNR411x Series (UN411x Series) Silicon PNP epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 ■ Features 7.6 (0.8) 3.0±0.2 For digital circuits 15.6±0.5 (0.8) 0.75 max. • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping ■ Resistance by Part Number • • • • • • • • • • • • • • • • • UNR4110 (UN4110) UNR4111 (UN4111) UNR4112 (UN4112) UNR4113 (UN4113) UNR4114 (UN4114) UNR4115 (UN4115) UNR4116 (UN4116) UNR4117 (UN4117) UNR4118 (UN4118) UNR4119 (UN4119) UNR411D (UN411D) UNR411E (UN411E) UNR411F (UN411F) UNR411H (UN411H) UNR411L (UN411L) UNR411M UNR411N (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 0.45+0.20 –0.10 0.45+0.20 –0.10 (2.5) (2.5) 0.7±0.1 1 2 3 1: Emitter 2: Collector 3: Base NS-B1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00018DED 1 UNR411x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base IEBO VEB = −6 V, IC = 0 − 0.01 mA UNR4110/4115/4116/4117 Conditions Min Typ Max V V − 0.1 cutoff current UNR4113 − 0.1 (Collector open) UNR4112/4114/411D/ 411E/411M/411N − 0.2 UNR4111 − 0.5 UNR411F/411H −1.0 UNR4119 −1.5 µA −2.0 UNR4118/411L Forward current UNR4118/411L transfer ratio Unit VCE = −10 V, IC = −5 mA hFE 20 UNR4119/411D/411F/411H 30 UNR4111 35 UNR4112/411E 60 UNR4113/4114/411M 80 UNR411N 80 400 UNR4110 */4115 */4116 */ 4117 * 160 460 Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = − 0.3 mA Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ UNR4113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UNR411D VCC = −5 V, VB = −10 V, RL = 1 kΩ − 0.25 V − 0.2 V −4.9 V VCC = −5 V, VB = −6 V, RL = 1 kΩ UNR411E Transition frequency fT Input resistance UNR4118 R1 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 −30% 0.51 UNR4119 1.0 UNR411H/411M 2.2 UNR4116/411F/411L/411N 4.7 UNR4111/4114/4115 10 UNR4112/4117 22 UNR4110/4113/411D/411E 47 MHz +30% kΩ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 2 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 SJH00018DED UNR411x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Resistance ratio UNR411M Conditions Min R1/R2 Typ Max Unit 0.047 UNR411N 0.1 UNR4118/4119 0.08 0.10 0.12 UNR4114 0.17 0.21 0.25 UNR411H 0.17 0.22 0.27 UNR411F 0.37 0.47 0.57 UNR4111/4112/4113/411L 0.8 1.0 1.2 UNR411E 1.70 2.14 2.60 UNR411D 3.7 4.7 5.7 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR4110 VCE(sat) IC Collector current IC (mA) IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −60 − 0.2 mA −40 − 0.1 mA −20 0 0 −2 −4 −6 −8 −10 Collector-emitter voltage VCE −12 (V) −100 Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C hFE IC −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −0.1 400 IC / IB = 10 −25°C −1 −10 Collector current IC (mA) SJH00018DED VCE = –10 V Forward current transfer ratio hFE IC VCE −120 −100 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 3 UNR411x Series IO VIN 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4111 IC VCE VCE(sat) IC Ta = 25°C IB = −1.0 mA − 0.9 mA Collector current IC (mA) −120 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) −100 −10 −1 − 0.1 −25°C − 0.01 − 0.1 −1 −104 −25°C 80 40 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C 120 IO VIN −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 −10 Ta = 75°C VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE −160 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00018DED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR411x Series Characteristics charts of UNR4112 IC VCE VCE(sat) IC Collector current IC (mA) −120 − 0.5mA −80 − 0.4mA − 0.3mA − 0.2mA −40 − 0.1mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 − 0.1 −25°C − 0.01 − 0.1 −1 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 4 3 2 −100 −1 000 VIN IO −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C −10 Collector current IC (mA) IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA − 0.9mA − 0.8mA − 0.7mA − 0.6mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4113 VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −120 Collector current IC (mA) Ta = 25°C − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 −25°C −1 −10 Collector current IC (mA) SJH00018DED VCE = −10 V Forward current transfer ratio hFE IC VCE −160 −100 Ta = 75°C 300 25°C 200 −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 5 UNR411x Series IO VIN 4 3 2 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4114 IC VCE VCE(sat) IC Ta = 25°C IB = −1.0 mA Collector current IC (mA) −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 Ta = 75°C 200 25°C −25°C 100 0 −1 −100 3 2 −100 −1 000 VIN IO VO = −5 V Ta = 25°C −103 −1 000 VO = − 0.2 V Ta = 25°C −100 Input voltage VIN (V) 4 −10 Collector current IC (mA) IO VIN Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 −104 f = 1 MHz IE = 0 Ta = 25°C −102 −10 −10 −1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 6 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE −160 −1 − 0.4 − 0.6 − 0.8 −1.0 Input voltage VIN SJH00018DED −1.2 (V) −1.4 − 0.1 − 0.1 −1 −10 Output current IO (mA) −100 UNR411x Series Characteristics charts of UNR4115 IC VCE VCE(sat) IC − 0.9 mA − 0.8 mA − 0.7 mA Collector current IC (mA) −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 Ta = 75°C 200 −25°C 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25˚C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C 100 IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 −0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector-emitter saturation voltage VCE(sat) (V) −100 −160 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4116 VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA −120 Collector current IC (mA) Ta = 25°C − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 400 VCE = −10 V Forward current transfer ratio hFE IC VCE −160 300 Ta = 75°C 200 25°C −25°C 100 −25°C −1 −10 Collector current IC (mA) SJH00018DED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 7 UNR411x Series IO VIN 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4117 IC VCE VCE(sat) IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA Collector current IC (mA) −100 −80 −60 − 0.3 mA −40 − 0.2 mA −20 0 − 0.1 mA −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 Ta = 75°C −1 25°C − 0.1 −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) −1 3 2 Ta = 75°C 200 25°C 100 0 −1 −100 −25°C −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −0.1 −1 −10 −100 Collector-base voltage VCB (V) 8 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −10 VCE = −10 V Collector current IC (mA) Cob VCB 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C −100 Collector-emitter saturation voltage VCE(sat) (V) −120 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00018DED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR411x Series Characteristics charts of UNR4118 IC VCE VCE(sat) IC −100 Collector current IC (mA) −200 IB = − 1.0 mA − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −80 −40 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 −10 Ta = 75°C 80 40 0 −1 −100 4 3 2 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 25°C −25°C IO VIN −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −240 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4119 VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 −80 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −40 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 160 VCE = −10 V Forward current transfer ratio hFE IC VCE −240 120 Ta = 75°C 80 25°C −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00018DED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 9 UNR411x Series IO VIN f = 1 MHz IE = 0 Ta = 25°C 4 3 2 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = −0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR411D IC VCE Ta = 25˚C −40 − 0.3 mA −30 − 0.2 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.1 mA −10 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 4 3 2 −25°C 40 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C 80 IO VIN −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 10 −10 −104 f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C 120 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE IB = − 1.0 mA − 0.9 mA − 0.8 mA −50 Collector current IC (mA) VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) −60 −1 −1.5 −2.0 −2.5 −3.0 −3.5 Input voltage VIN (V) SJH00018DED −4.0 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 UNR411x Series Characteristics charts of UNR411E IC VCE −40 − 0.3 mA −30 − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.2 mA − 0.1 mA −10 0 −2 0 −4 −6 −8 −10 −12 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −25°C − 0.01 − 0.1 Collector-emitter voltage VCE (V) −1 200 Ta = 75°C 100 0 −1 −100 4 3 2 25°C −25°C −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 IO VIN −104 f = 1 MHz IE = 0 Ta = 25°C 5 −10 VCE = −10 V Collector current IC (mA) Cob VCB 6 hFE IC 400 Forward current transfer ratio hFE IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA −50 Collector current IC (mA) VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) −60 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 −1.5 −100 Collector-base voltage VCB (V) −2.0 −2.5 −3.0 −3.5 −4.0 − 0.01 − 0.1 Input voltage VIN (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR411F IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 0 − 0.2 mA 0 −2 −4 −6 −8 − 0.1 mA −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −200 Collector current IC (mA) VCE(sat) IC −100 hFE IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 160 VCE = −10 V Forward current transfer ratio hFE IC VCE −240 120 Ta = 75°C 25°C 80 −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00018DED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 11 UNR411x Series IO VIN 4 3 2 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO −104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −1 − 0.4 −100 Collector-base voltage VCB (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.01 − 0.1 Input voltage VIN (V) −1 −10 −100 Output current IO (mA) Characteristics charts of UNR411H IC VCE VCE(sat) IC −100 Collector current IC (mA) −100 −80 IB = − 0.5 mA − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 −1 Ta = 75°C 25°C −0.1 −25°C −0.01 −1 Collector-emitter voltage VCE (V) −100 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 3 2 −1 000 0 −1 −10 −100 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 Output current IO (mA) SJH00018DED VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −0.1 −1 −10 Collector current IC (mA) 1 Collector-base voltage VCB (V) 12 −100 VIN IO f = 1 MHz IE = 0 Ta = 25°C 5 −10 Collector current IC (mA) Cob VCB 6 hFE IC 240 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −120 −100 −100 UNR411x Series Characteristics charts of UNR411L VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 −160 IB = −1.0 mA −120 − 0.8 mA − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 –2 –4 –6 –8 –10 Collector-emitter saturation voltage VCE(sat) (V) −100 −1 −10 −100 160 120 80 25°C −25°C 40 0 −1 −1 000 Ta = 75°C −10 −100 −1 000 Collector current IC (mA) VIN IO −100 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob −25°C VCE = −10 V 200 Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C − 0.1 Collector-emitter voltage VCE (V) 6 IC / IB = 10 −10 − 0.01 −1 –12 hFE IC 240 Forward current transfer ratio hFE IC VCE −240 4 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) Collector-base voltage VCB (V) Characteristics charts of UNR411M IC VCE − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) hFE IC 200 IC / IB = 33.3 Ta = 75°C Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA − 0.9 mA −120 − 0.8 mA − 0.7 mA −100 Collector current IC (mA) VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) −140 −10 Ta = 75°C −1 25°C −25°C − 0.1 − 0.01 −1 −10 −100 Collector current IC (mA) SJH00018DED −1 000 VCE = −10 V 25°C 160 −25°C 120 80 40 0 −1 −10 −100 −1 000 Collector current IC (mA) 13 UNR411x Series IO VIN VIN IO −1 000 f = 1 MHz Ta = 25°C VO = −5 V Ta = 25°C 1 −10 0 −20 −30 −40 −10 −1 − 0.1 −100 Input voltage VIN (V) −100 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 0 Collector-base voltage VCB (V) − 0.5 −1.0 −1.5 −2.0 −2.5 − 0.01 −1 −10 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR411N VCE(sat) IC − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA Collector current IC (mA) −120 −100 − 0.5 mA −80 − 0.4 mA − 0.3 mA −60 −40 − 0.2 mA −20 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 300 Ta = 75°C − 0.1 25°C −25°C IC / IB = 10 − 0.01 − 0.1 −1 0 −10 −20 −30 Collector-base voltage VCB (V) 14 −40 100 50 −1.0 −1.5 −2.0 Input voltage VIN (V) SJH00018DED −1 000 −100 Input voltage VIN (V) − 0.5 −100 VIN IO VO = −5 V Ta = 25°C 0 −10 Collector current IC (mA) −10 −1 −25°C 150 0 −1 −100 25°C 200 IO VIN −100 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 1 −10 250 Collector current IC (mA) Cob VCB f = 1 MHz Ta = 25°C VCE = −10 V Ta = 75°C Collector-emitter voltage VCE (V) 10 hFE IC −1 Forward current transfer ratio hFE IB = −1.0 mA Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −140 −2.5 −10 −1 − 0.1 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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