Small Signal Transistor Arrays UNA0225 (UN225) Transistor array to drive the small motor ■ Features ● ● ● ● Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 8 elements incorporated (SO–16) 1.5±0.1 7.7±0.3 5.5±0.3 0.8 16 6.5±0.3 12˚ 6˚ 12˚ 0 to 0.1 ● 9 14-0.75±0.1 ● 8 45˚ +0.1 ● Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. 0.5 ● 0.2–0.05 ■ Applications 16-0.3±0.1 1 0.5±0.2 ■ 6˚ Absolute Maximum Ratings (Ta=25±2˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO ±10 V Collector to emitter voltage VCEO ±10 V Emitter to base voltage VEBO ±7 V IC ±0.5 A PT* 0.5 W Collector current Total power dissipation Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note: ± marks used above: +: NPN part, –: PNP part * TC = 25˚C only when the elements are active SO–16 Package Internal Connection 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Note.) The Part number in the Parenthesis shows conventional part number. 1 Small Signal Transistor Arrays ■ Electrical Characteristics UNA0225 (Ta=25±2˚C) Parameter Symbol Collector cutoff current ICBO Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat)1 Transition frequency fT Collector output capacitance Cob Forward voltage (DC) VF Conditions min typ max (NPN) VCB = 7V 1 (PNP) VCB = –7V –1 (NPN) IC = 10µA 10 (PNP) IC = –10µA –10 (NPN) IC = 1mA 10 (PNP) IC = –1mA –10 (NPN) IE = 10µA 7 (PNP) IE = –10µA –7 Unit µA V V V (NPN) VCE = 2V, IC = 0.2A* 200 800 (PNP) VCE = –2V, IC = – 0.2A* 200 800 (NPN) IC = 0.2A, IB = 2mA 0.2 (PNP) IC = – 0.2A, IB = –2mA – 0.2 (NPN) VCB = 6V, IE = –50mA, f = 200MHz 120 (PNP) VCB = –6V, IE = 50mA, f = 200MHz 120 (NPN) VCB = 6V, IE = 0, f = 1MHz 25 (PNP) VCB = –6V, IE = 0, f = 1MHz 35 V MHz pF (NPN) IF = 0.5A 1.3 (PNP) IF = – 0.5A –1.3 V *Pulse measurement Characteristics charts of PNP transistor block PT — Ta IC — VCE IC — VBE –1.2 0.6 –1.2 0.4 0.3 0.2 –4mA –3mA –0.8 –2mA –0.6 –0.4 –1mA –0.2 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 25˚C –1.0 Ta=75˚C –25˚C –0.8 –0.6 –0.4 –0.2 0 0 2 IB=–6mA VCE=–2V Collector current IC (A) –1.0 0.5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C –5mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 0 –0.4 –0.8 –1.2 –1.6 –2.0 –2.4 Base to emitter voltage VBE (V) Small Signal Transistor Arrays UNA0225 VCE(sat) — IC hFE — IC VCE=–2V –3 –1 Ta=75˚C 25˚C –25˚C –0.1 –0.03 –0.01 –0.003 –0.001 –0.01 –0.03 –0.1 –0.3 –1 –3 120 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0 –0.01 –0.03 –0.1 –0.3 –10 Collector current IC (A) –1 –3 Collector output capacitance Cob (pF) IC/IB=100 –0.3 Cob — VCB 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –10 f=1MHz IE=0 Ta=25˚C 100 80 60 40 20 0 –1 –10 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector current IC (A) Characteristics charts of NPN transistor block PT — Ta IC — VCE 0.6 IC — VBE 1.2 1.2 0.4 0.3 0.2 2.0mA 0.8 1.5mA 0.6 1.0mA 0.4 0.5mA 40 60 2 VCE(sat) — IC 10 Forward current transfer ratio hFE Ta=75˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 6 8 10 12 0 0.4 0.8 3 Collector current IC (A) 10 500 25˚C 300 –25˚C 200 100 0 0.01 0.03 0.1 0.3 1.6 2.0 2.4 Cob — VCB Ta=75˚C 400 1.2 Base to emitter voltage VBE (V) VCE=2V 1 0.1 0.4 hFE — IC 3 25˚C 4 600 IC/IB=100 0.3 0.6 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) –25˚C 0 0 80 100 120 140 160 1 3 Collector current IC (A) 10 60 Collector output capacitance Cob (pF) 20 Ta=75˚C 0.8 0.2 0 0 25˚C 1.0 2.5mA 0.2 0.1 0 Collector to emitter saturation voltage VCE(sat) (V) VCE=2V Collector current IC (A) IB=3.0mA 1.0 0.5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C f=1MHz IE=0 Ta=25˚C 50 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR