Transistors with built-in Resistor UNR421x Series (UN421x Series) Silicon NPN epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 ■ Features 7.6 (0.8) 3.0±0.2 For digital circuits 15.6±0.5 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping (0.8) 0.75 max. ■ Resistance by Part Number • • • • • • • • • • • • • • • UNR4210 UNR4211 UNR4212 UNR4213 UNR4214 UNR4215 UNR4216 UNR4217 UNR4218 UNR4219 UNR421D UNR421E UNR421F UNR421K UNR421L (UN4210) (UN4211) (UN4212) (UN4213) (UN4214) (UN4215) (UN4216) (UN4217) (UN4218) (UN4219) (UN421D) (UN421E) (UN421F) (UN421K) (UN421L) (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 10 kΩ 4.7 kΩ (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ 0.45+0.20 –0.10 0.45+0.20 –0.10 (2.5) (2.5) 0.7±0.1 1 2 3 1: Emitter 2: Collector 3: Base NS-B1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00020BED 1 UNR421x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 Conditions Min 50 Typ Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base UNR4210/4215/4216/4217 IEBO VEB = 6 V, IC = 0 0.01 mA cutoff current Unit UNR4213 V V 0.1 µA 0.1 (Collector open) UNR4212/4214/421D/421E 0.2 UNR4211 0.5 UNR421F/421K 1.0 UNR4219 1.5 UNR4218/421L 2.0 Forward current UNR4218/421K/421L transfer ratio Max hFE VCE = 10 V, IC = 5 mA 30 UNR4211 35 UNR4212/421E 60 UNR4213/4214 80 UNR4210 */4215 */4216 */ 4217 * 160 Collector-emitter saturation voltage VCE(sat) 20 UNR4219/421D/421F 460 IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ UNR4213/421K VCC = 5 V, VB = 3.5 V, RL = 1 kΩ UNR421D VCC = 5 V, VB = 10 V, RL = 1 kΩ 0.25 4.9 V V 0.2 V VCC = 5 V, VB = 6 V, RL = 1 kΩ UNR421E VCB = 10 V, IE = −2 mA, f = 200 MHz Transition frequency fT 150 Input UNR4218 R1 resistance UNR4219 1.0 UNR4216/421F/421L 4.7 UNR4211/4214/4215/421K 10 UNR4212/4217 22 UNR4210/4213/421D/421E 47 −30% R1/R2 0.51 MHz +30% kΩ Resistance UNR4218/4219 0.08 0.10 0.12 ratio UNR4214 0.17 0.21 0.25 UNR421F 0.37 0.47 0.57 UNR4211/4212/4213/421L 0.8 1.0 1.2 UNR421K 1.70 2.13 2.60 UNR421E 1.70 2.14 2.60 UNR421D 3.7 4.7 5.7 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 2 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 SJH00020BED UNR421x Series Common characteristics chart PT Ta Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR4210 VCE(sat) IC Ta = 25°C Collector current IC (mA) 50 40 30 0.3 mA 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA 20 10 0 0 2 4 6 8 10 12 100 10 1 Ta = 75°C 25°C 0.1 Ta = 75°C 25°C 200 −25°C 100 1 10 100 1 IO VIN 104 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 0 0.01 0.1 Cob VCB 5 VCE = 10 V −25°C Collector-emitter voltage VCE (V) 6 hFE IC 400 IC / IB = 10 Forward current transfer ratio hFE IB = 1.0 mA 0.9 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 60 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00020BED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 3 UNR421x Series Characteristics charts of UNR4211 VCE(sat) IC Collector current IC (mA) 0.7 mA 0.6 mA 0.5 mA 120 0.4 mA 0.3 mA 80 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 25°C −25˚C 300 1 10 Ta = 75°C 200 25°C −25°C 100 100 1 IO VIN 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 4 100 1 000 VIN IO 104 f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob VCE = 10 V 0 0.01 0.1 Cob VCB 5 Ta = 75°C 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 0.4 100 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR4212 VCE(sat) IC 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 4 100 hFE IC 10 1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 400 IC / IB = 10 1 10 Collector current IC (mA) SJH00020BED 100 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 120 Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 300 Ta = 75°C 200 25°C −25°C 100 0 1 10 100 Collector current IC (mA) 1 000 UNR421x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 0.4 100 0.6 0.8 1.0 1.2 0.01 1.4 0.1 Input voltage VIN (V) Collector-base voltage VCB (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR4213 VCE(sat) IC Collector current IC (mA) 0.9 mA 0.8 mA 0.7 mA 0.6 mA 120 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 10 1 −25°C 0.01 0.1 1 25°C −25°C 200 100 0 100 Ta = 75°C 300 1 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 4 10 Collector current IC (mA) IO VIN 104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 10 VCE = 10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00020BED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 5 UNR421x Series Characteristics charts of UNR4214 VCE(sat) IC Collector current IC (mA) IB = 1.0 mA 120 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 1 10 Ta = 75°C 200 25°C −25°C 100 0 100 1 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) IO VIN 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 5 VCE = 10 V −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR4215 VCE(sat) IC Collector current IC (mA) 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 6 100 hFE IC 400 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 300 Ta = 75°C 200 25°C −25°C 100 −25°C 0.01 0.1 1 10 Collector current IC (mA) SJH00020BED 100 0 1 10 100 Collector current IC (mA) 1 000 UNR421x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 0.4 100 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) Collector-base voltage VCB (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR4216 VCE(sat) IC IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 120 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 10 1 Ta = 75°C 25°C 0.1 25°C −25°C 200 100 10 100 1 IO VIN 104 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 0 1 Cob VCB 5 VCE = 10 V Ta = 75°C −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 IC / IB = 10 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00020BED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 7 UNR421x Series Characteristics charts of UNR4217 80 0.4 mA 0.3 mA 0.2 mA 60 40 20 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 1 Ta = 75°C 25°C 0.1 200 Ta = 75°C 25°C −25°C 100 0 1 10 100 1 IO VIN 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 4 100 1 000 VIN IO 104 f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 −25°C 0.01 0.1 Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE T = 25°C a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 100 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 120 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR4218 VCE(sat) IC Collector current IC (mA) 200 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 160 120 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 8 100 hFE IC 160 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 120 Ta = 75°C 80 25°C −25°C 40 −25°C 0.01 0.1 0 1 10 Collector current IC (mA) SJH00020BED 100 1 10 100 Collector current IC (mA) 1 000 UNR421x Series IO VIN 4 3 2 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN IO 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR4219 VCE(sat) IC Collector current IC (mA) 200 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 160 120 0.5 mA 0.4 mA 0.3 mA 80 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 100 10 1 Ta = 75°C 25°C 0.1 Ta = 75°C 80 25°C −25°C 40 10 100 1 IO VIN 104 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 0 1 Cob VCB 5 VCE = 10 V −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00020BED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 9 UNR421x Series Characteristics charts of UNR421D VCE(sat) IC 20 15 0.2 mA 0.1 mA 10 5 0 0 2 4 6 8 10 12 100 1 −25°C 0.01 0.1 1 10 120 80 40 0 100 1 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 4 10 Collector current IC (mA) IO VIN 104 f = 1 MHz IE = 0 Ta = 25°C Ta = 75°C 25°C −25°C Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 25°C 0.1 Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 160 IC / IB = 10 Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C 0.9 mA 0.8 mA 0.5 mA 0.7 mA 0.4 mA 25 0.6 mA 0.3 mA IB = 1.0 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 30 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 1.5 100 Collector-base voltage VCB (V) 2.0 2.5 3.0 3.5 0.01 0.1 4.0 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR421E VCE(sat) IC Collector current IC (mA) 50 40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA 30 20 10 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 10 100 hFE IC 160 IC / IB = 10 10 1 VCE = 10 V Forward current transfer ratio hFE IB = 1.0 mA 0.7 mA Ta = 25°C 0.9 mA 0.6 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 60 Ta = 75°C 25°C 0.1 Ta = 75°C 120 25°C −25°C 80 40 −25°C 0.01 0.1 0 1 10 Collector current IC (mA) SJH00020BED 100 1 10 100 Collector current IC (mA) 1 000 UNR421x Series IO VIN 104 5 4 3 2 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 0.1 1 10 1 1.5 100 2.0 2.5 3.0 3.5 0.01 0.1 4.0 Input voltage VIN (V) Collector-base voltage VCB (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR421F VCE(sat) IC Collector current IC (mA) 200 0.9 mA 0.8 mA 0.7 mA 0.6 mA 160 120 IB = 1.0 mA 0.5 mA 80 0.4 mA 0.3 mA 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 Ta = 75°C 1 25°C 0.1 Ta = 75°C 80 25°C −25°C 40 10 100 1 IO VIN 104 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 0 1 Cob VCB 5 VCE = 10 V −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00020BED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 11 UNR421x Series Characteristics charts of UNR421K VCE(sat) IC Collector current IC (mA) 200 160 IB = 1.2 mA 120 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 40 0.2 mA 0 0 2 4 6 8 10 100 IC / IB = 10 10 1 25°C −25°C 0.01 12 1 100 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 1 000 1 10 100 1 000 Collector current IC (mA) VIN IO 100 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 10 VCE = 10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 240 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 4 3 2 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 1 10 0.01 0.1 100 Collector-base voltage VCB (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR421L VCE(sat) IC Collector current IC (mA) 200 160 IB = 1.0 mA 0.8 mA 120 0.6 mA 80 0.4 mA 40 0.2 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 12 100 hFE IC 10 1 Ta = 75°C 25°C 0.1 −25°C 0.01 240 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 200 10 100 Collector current IC (mA) SJH00020BED 1 000 Ta = 75°C 160 25°C 120 −25°C 80 40 0 1 VCE = 10 V 1 10 100 Collector current IC (mA) 1 000 UNR421x Series VIN IO 100 f = 1 MHz IE = 0 Ta = 25°C 5 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 4 3 2 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 1 10 Collector-base voltage VCB (V) 100 0.01 0.1 1 10 100 Output current IO (mA) SJH00020BED 13 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP