NEC UPA611TA

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA611TA
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
0.65 +0.1
–0.15
The µPA611TA is a switching device which can be driven directly by a
2.5-V power source.
The µPA611TA has excellent switching characteristics, and is suitable for
0.32 +0.1
–0.05
0.16 +0.1
–0.06
1.5
2.8 ±0.2
use as a high-speed switching device in digital circuits.
0 to 0.1
FEATURES
• Can be driven by a 2.5-V power source
0.95 0.95
1.9
• Low gate cut-off voltage
0.8
1.1 to 1.4
2.9 ±0.2
ORDERING INFORMATION
EQUIVALENT CIRCUIT
(1/2 Circuit)
PART NUMBER
PACKAGE
µPA611TA
SC-74 (Mini Mold)
Drain
Internal
Diode
Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±0.1
A
ID(pulse)
±0.4
A
Total Power Dissipation
PT
300 (TOTAL)
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (pulse)
Note
Gate
Protection
Diode
Source
PIN CONNECTION (Top View)
6
5
4
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
1
2
3
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
Marking : IB
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D11707EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
©
1999
µPA611TA
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I DSS
VDS = 30 V, VGS = 0 V
1
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
1.8
V
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off)
VDS = 3 V, ID = 10 µA
1.0
| yfs |
VDS = 3 V, ID = 10 m A
20
RDS(on)1
VGS = 2.5 V, ID = 1 m A
8
15
Ω
RDS(on)2
VGS = 4 V, ID = 10 mA
4
8
Ω
RDS(on)3
VGS = 10 V, ID = 10 mA
3
5
Ω
1.4
mS
Input Capacitance
Ciss
VDS = 3 V
9
pF
Output Capacitance
Coss
VGS = 0 V
12
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
2.1
pF
Turn-on Delay Time
td(on)
VDD = 3 V
40
ns
tr
ID = 10 mA
55
ns
td(off)
VGS(on) = 4 V
68
ns
RG = 10 Ω, RL = 300 Ω
64
ns
Rise Time
Turn-off Delay Time
Fall Time
2
tf
Data Sheet D11707EJ1V0DS00
µPA611TA
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
80
ID - Drain Current - mA
dT - Derating Factor - %
100
60
40
20
VGS = 4 V
300
3.5 V
200
3V
100
2.5 V
0
30
60
120
90
TA - Ambient Temperature - ˚C
2
0
150
| yfs | - Forward Transfer Admittance - mS
0.01
TA = 125˚C
75˚C
25˚C
−25˚C
0.00001
RDS(on) - Drain to Source On-state Resistance - Ω
0.000001
1.0
4.0
2.0
3.0
VGS - Gate to Sorce Voltage - V
5.0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 2.5 V
15
10
TA = 125˚C
75˚C
25˚C
−25˚C
5
0
0.0001
0.001
0.01
ID - Drain Current - A
0.1
VDS = 3 V
100
TA = −25˚C
25˚C
75˚C
125˚C
10
1
0.0001
0.001
0.01
0.1
1
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
ID - Drain Current - A
0.1
0.0001
10
1000
VDS = 3 V
0.001
8
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
TRANSFER CHARACTERISTICS
1
6
4
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
VGS = 4 V
10
5
0
0.0001
Data Sheet D11707EJ1V0DS00
TA = 125˚C
75˚C
25˚C
−25˚C
0.001
0.01
0.1
ID - Drain Current - A
1
3
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
VGS = 10 V
8
6
TA = 125˚C
75˚C
25˚C
−25˚C
4
2
0
0.0001
0.1
0.001
0.01
ID - Drain Current - A
1
RDS (on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
µPA611TA
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
ID = 1 mA
20
10
0
Ciss
Coss
1
Crss
0.1
1
10
100
tf
td(on)
td(off)
VDD = 3 V
VGS(on) = 4V
RG = 10 Ω
10
0.1
0.1
0.01
0.001
0.6
0.8
1
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
IF - Source to Drain Current - A
20
tr
100
VDS - Drain to Source Voltage - V
1.2
1.0
VF(S-D) - Source to Drain Voltage - V
4
16
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Swwitchig Time - ns
Ciss, Coss, Crss - Capacitance - pF
10
0.0001
0.4
12
8
1000
f = 1 MHz
VGS = 0 V
0.1
0.01
4
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
10 mA
100 mA
Data Sheet D11707EJ1V0DS00
10
µPA611TA
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability / quality control system
TEI-1202
Quality grade on NEC semiconductor devices
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
Data Sheet D11707EJ1V0DS00
5
µPA611TA
[MEMO]
6
Data Sheet D11707EJ1V0DS00
µPA611TA
[MEMO]
Data Sheet D11707EJ1V0DS00
7
µPA611TA
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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M7 98. 8