DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION 0.65 +0.1 –0.15 The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for 0.32 +0.1 –0.05 0.16 +0.1 –0.06 1.5 2.8 ±0.2 use as a high-speed switching device in digital circuits. 0 to 0.1 FEATURES • Can be driven by a 2.5-V power source 0.95 0.95 1.9 • Low gate cut-off voltage 0.8 1.1 to 1.4 2.9 ±0.2 ORDERING INFORMATION EQUIVALENT CIRCUIT (1/2 Circuit) PART NUMBER PACKAGE µPA611TA SC-74 (Mini Mold) Drain Internal Diode Gate ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±0.1 A ID(pulse) ±0.4 A Total Power Dissipation PT 300 (TOTAL) mW Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note Gate Protection Diode Source PIN CONNECTION (Top View) 6 5 4 Note PW ≤ 10 µs, Duty Cycle ≤ 1 % 1 2 3 1. Source 1 2. Source 2 3. Gate 2 4. Drain 2 5. Gate 1 6. Drain 1 Marking : IB Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11707EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan © 1999 µPA611TA ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = 30 V, VGS = 0 V 1 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 1.8 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = 3 V, ID = 10 µA 1.0 | yfs | VDS = 3 V, ID = 10 m A 20 RDS(on)1 VGS = 2.5 V, ID = 1 m A 8 15 Ω RDS(on)2 VGS = 4 V, ID = 10 mA 4 8 Ω RDS(on)3 VGS = 10 V, ID = 10 mA 3 5 Ω 1.4 mS Input Capacitance Ciss VDS = 3 V 9 pF Output Capacitance Coss VGS = 0 V 12 pF Reverse Transfer Capacitance Crss f = 1 MHz 2.1 pF Turn-on Delay Time td(on) VDD = 3 V 40 ns tr ID = 10 mA 55 ns td(off) VGS(on) = 4 V 68 ns RG = 10 Ω, RL = 300 Ω 64 ns Rise Time Turn-off Delay Time Fall Time 2 tf Data Sheet D11707EJ1V0DS00 µPA611TA TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 80 ID - Drain Current - mA dT - Derating Factor - % 100 60 40 20 VGS = 4 V 300 3.5 V 200 3V 100 2.5 V 0 30 60 120 90 TA - Ambient Temperature - ˚C 2 0 150 | yfs | - Forward Transfer Admittance - mS 0.01 TA = 125˚C 75˚C 25˚C −25˚C 0.00001 RDS(on) - Drain to Source On-state Resistance - Ω 0.000001 1.0 4.0 2.0 3.0 VGS - Gate to Sorce Voltage - V 5.0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 VGS = 2.5 V 15 10 TA = 125˚C 75˚C 25˚C −25˚C 5 0 0.0001 0.001 0.01 ID - Drain Current - A 0.1 VDS = 3 V 100 TA = −25˚C 25˚C 75˚C 125˚C 10 1 0.0001 0.001 0.01 0.1 1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω ID - Drain Current - A 0.1 0.0001 10 1000 VDS = 3 V 0.001 8 FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT TRANSFER CHARACTERISTICS 1 6 4 VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 VGS = 4 V 10 5 0 0.0001 Data Sheet D11707EJ1V0DS00 TA = 125˚C 75˚C 25˚C −25˚C 0.001 0.01 0.1 ID - Drain Current - A 1 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 VGS = 10 V 8 6 TA = 125˚C 75˚C 25˚C −25˚C 4 2 0 0.0001 0.1 0.001 0.01 ID - Drain Current - A 1 RDS (on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω µPA611TA DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 ID = 1 mA 20 10 0 Ciss Coss 1 Crss 0.1 1 10 100 tf td(on) td(off) VDD = 3 V VGS(on) = 4V RG = 10 Ω 10 0.1 0.1 0.01 0.001 0.6 0.8 1 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 IF - Source to Drain Current - A 20 tr 100 VDS - Drain to Source Voltage - V 1.2 1.0 VF(S-D) - Source to Drain Voltage - V 4 16 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Swwitchig Time - ns Ciss, Coss, Crss - Capacitance - pF 10 0.0001 0.4 12 8 1000 f = 1 MHz VGS = 0 V 0.1 0.01 4 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 10 mA 100 mA Data Sheet D11707EJ1V0DS00 10 µPA611TA REFERENCE Document Name Document No. NEC semiconductor device reliability / quality control system TEI-1202 Quality grade on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E Data Sheet D11707EJ1V0DS00 5 µPA611TA [MEMO] 6 Data Sheet D11707EJ1V0DS00 µPA611TA [MEMO] Data Sheet D11707EJ1V0DS00 7 µPA611TA • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8