DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1399 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) 1 3 1.1 to 1.4 +0.1 0.16 –0.06 Marking 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE 2SK1399 SC-59 (Mini Mold) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) ★ EQUIVALENT CIRCUIT Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS ±7.0 V Drain Current (DC) ID(DC) ±100 mA ID(pulse) ±200 mA Total Power Dissipation PT 200 mW Channel Temperature Tch 150 °C Operating Temperature Topt –55 to +80 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note 0.4 +0.1 –0.05 2 0.65 –0.15 0.3 0.95 • Can be driven by a 3.0-V power source • Not necessary to consider driving current because of it is high input impedance • Possible to reduce the number of parts by omitting the bias resistor • Can be used complementary with the 2SJ185 +0.1 1.5 0.95 2.9 ± 0.2 FEATURES 2.8 ± 0.2 0.4 +0.1 –0.05 The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving. Drain Gate Gate Protection Diode Electrode Connection 1.Source Internal 2.Gate Diode 3.Drain Source Marking: G12 Note PW ≤ 10 ms, Duty Cycle ≤ 50 % Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14770EJ2V0DS00 (2nd edition) (Previous No.TC-2343) Date Published March 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1991, 2000 2SK1399 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS ★ SYMBOL TYP. MAX. UNIT 10 µA ±5.0 µA 1.5 V I DSS VDS = 50 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.9 1.2 | yfs | VDS = 3.0 V, ID = 10 mA 20 38 RDS(on)1 VGS = 2.5 V, ID = 10 mA 22 40 Ω RDS(on)2 VGS = 4.0 V, ID = 10 mA 14 20 Ω Forward Transfer Admittance Drain to Source On-state Resistance mS Input Capacitance Ciss VDS = 3.0 V 8 pF Output Capacitance Coss VGS = 0 V 7 pF Reverse Transfer Capacitance Crss f = 1 MHz 3 pF Turn-on Delay Time td(on) VDD = 3.0 V 15 ns tr ID = 20 mA 100 ns VGS(on) = 3.0 V 30 ns RG = 10 Ω, RL = 150 Ω 35 ns Rise Time Turn-off Delay Time td(off) Fall Time ★ MIN. Drain Cut-off Current Gate Cut-off Voltage ★ TEST CONDITIONS tf TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA tf toff Data Sheet D14770EJ2V0DS00 2SK1399 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - mW dT - Derating Factor - % 300 100 80 60 40 20 0 0 250 200 150 100 50 0 20 40 60 80 100 120 140 160 0 30 Tc - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 60 90 120 150 180 210 240 TA - Ambient Temperature - ˚C TRANSFER CHARACTERISTICS Pulse measurement ID - Drain Current - mA 4.0 V 60 40 2.5 V 20 0 0 0.5 1 1.5 10 1 TA = 150˚C 75˚C 25˚C –25˚C 0.1 VDS = 3.0 V Pulse measurement 0.01 0 2 1 VDS - Drain to Source Voltage - V VDS = 3.0 V ID = 1 µA 1.5 1.0 0.5 0 50 100 3 4 5 6 7 8 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 150 | yfs | - Forward Transfer Admittance - mS 2.0 2 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V ★ ID - Drain Current - mA 100 VGS = 4.5 V 80 1000 500 VDS = 5.0 V f = 1 kHz 200 100 50 20 10 1 5 10 20 50 100 200 500 1000 ID - Drain Current - mA Tch - Channel Temperature - ˚C Data Sheet D14770EJ2V0DS00 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulse measurement ID = 100 mA 20 10 mA 10 0 0 1 2 3 4 5 6 7 8 9 10 RDS(on) - Drain to Source On-State Resistance - Ω RDS (on) - Drain to Source On-State Resistance - Ω 2SK1399 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulse measurement 50 VGS = 2.5 V 20 4.0 V 10 5 2 1 0 2 5 10 20 ID - Drain Current - mA VGS - Gate to Source Voltage - V 4 0.6 1 Data Sheet D14770EJ2V0DS00 60 2SK1399 [MEMO] Data Sheet D14770EJ2V0DS00 5 2SK1399 [MEMO] 6 Data Sheet D14770EJ2V0DS00 2SK1399 [MEMO] Data Sheet D14770EJ2V0DS00 7 2SK1399 • The information in this document is subject to change without notice. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8