DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1688G 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC DESCRIPTION The µPC1688G is a silicon monolithic integrated circuit especially designed as a flat gain and wide band amplifier covering HF through UHF band. FEATURES • Flat gain: ∆GP = ±1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain : 21 dBTYP. @ 0.5 GHz • Supply voltage : 5 V ± 0.5 V • 4 pin mini mold package ORDERING INFORMATION Order Number µPC1688G µPC1688G-T1 Package 4 pin mini mold µPC1688G-T2 Marking Supplying Form Plastic magazine case C1C • Embossed tape 8 mm wide. Tape perforation side faces pin3, 4. • QTY 3 kpcs/Reel. Tape perforation side faces pin1, 2. Remarks To order evaluation samples, please contact your local NEC sales office. INTERNAL EQUIVALENT CIRCUIT PIN CONNECTIONS (Top View) 3 VCC 2 GND 1 2 Output Input 4 C1C Output 3 VCC 4 Input 1 GND Caution Electro-static sensitive devices Document No. P11492EJ2V0DS00 (2nd edition) (Previous No. ID-2525) Date Published May 1996 P Printed in Japan © 1996 µPC1688G ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C) Supply Voltage VCC 6 V Input Power Pin +10 dBm Total Power Dissipation PT 200 mW Operating Temperature Topt –40 to +85 ˚C Storage Temperature Tstg –55 to +150 ˚C ELECTRICAL CHARACTERISTICS (TA = +25 ˚C, VCC = 5 V, ZS = ZL = 50 Ω) Characteristic Symbol MIN. TYP. MAX. Unit Test Conditions Circuit current ICC 14 19 24 mA No input signal Power gain GP 18 21 23 dB f = 0.5 GHz (GP = | S21 |) Noise figure NF — 4.0 5.5 dB f = 0.5 GHz Upper limit operating frequency fu 0.9 1.1 — GHz Isolation ISL 23 27 — dB f = 0.5 GHz (ISL = | S12 |) Input return loss RLin 10 13 — dB f = 0.5 GHz (RLin = | S11 |) Output return loss RLout 10 13 — dB f = 0.5 GHz (RLout = | S22 |) Maximum output level PO(sat) 2 4 — dBm f = 0.5 GHz, Pin = –5 dBm 3 dB down below 0.1 GHz gain As for test circuit and application circuit, please refer to Application note (Document No. 10964EJ2V0AN00). 2 µPC1688G TYPICAL CHARACTERISTICS (TA = 25 ˚C, Unless otherwise specified) SUPPLY CURRENT vs. SUPPLY VOLTAGE 32 SUPPLY CURRENT vs.TEMPERATURE 32 VCC = 5 V 28 24 24 ICC - Supply Current - mA ICC - Supply Current - mA No input signal 28 20 16 12 20 16 12 8 8 4 4 0 1 2 3 4 5 0 –60 6 –30 0 VCC - Supply Voltage - V VCC = 5 V Pin = –5 dBm 6 4 f = 100 MHz 500 MHz 1 GHz 0 –2 10 30 50 70 100 300 500700 f - Frequency - MHz 1G 2G IM3 - Third Order Inter-modulation - dBc PO(sat) - Saturation Power - dBm 10 2 60 120 90 150 TA - Temperature - ˚C SATURATION POWER vs. FREQUENCY 8 30 THIRD ORDER INTER-MODULATION vs. OUTPUT POWER OF EACH TONE –70 f1 = 500 MHz f2 = 502 MHz –60 VCC = 5.5 V –50 5.0 V –40 4.5 V –30 –20 –10 0 –20 –15 –10 –5 0 5 PO(each) - Output Power of Each Tone - dBm 3 µPC1688G NOISE FIGURE AND POWER GAIN (| S21 |) vs. FREQUENCY POWER GAIN (| S21 |) vs. FREQUENCY 24 24 GP NF - Noise Figure - dB GP - Power Gain - dB (| S21 |) - dB GP - Power Gain - dB (| S21 |) GP 20 16 TA = –40 ˚C +25 ˚C +85 ˚C 12 8 4 0 10 30 50 70100 3005007001G 20 5.0 V 12 VCC = 5.5 V 5.0 V 4.5 V 8 NF 30 50 70100 f - Frequency - MHz 10 5 0 f = 1 GHz –5 –10 | S11 | - Input Return Loss - dB | S22 | - Output Return Loss - dB | S12 | - Isolation - dB f = 100 MHz f = 500 MHz Pout - Output Power - dBm 3005007001G INPUT AND OUTPUT RETURN LOSS, ISOLATION (| S11 |) (| S22 |) (| S12 |) vs. FREQUENCY 10 | S11 | | S22 | | S12 | 0 VCC = 5.5 V –10 –15 VCC = 5.0 V VCC = 4.5 V –20 VCC = 5.5 V –30 5.0 V –40 VCC = 4.5 to 5.5 V 4.5 V –50 10 30 50 70100 3005007001G f - Frequency - MHz –25 –20 –15 –10 Pin - Input Power - dBm 4 2G f - Frequency - MHz INPUT POWER vs. OUTPUT POWER –20 –30 4.5 V 4 0 10 2G VCC = 5.5 V 16 –5 0 2G 5˚ 0.6 +0.1 –0.05 5˚ 0.16 +0.1 –0.06 0 to 0.1 0.8 1.1 +0.2 –0.1 (1.9) 0.95 3 2 0.4 +0.1 –0.05 0.4 +0.1 –0.05 1.5 +0.2 –0.1 5˚ 0.4 +0.1 –0.05 4 1 0.85 (1.8) 2.9 ± 0.2 µPC1688G PACKAGE DIMENSIONS (Unit: mm) 2.8 +0.2 –0.3 5˚ 5 µPC1688G NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground pins as short as possible. (4) The bypass capacitor should be attached to the VCC pin. (5) The DC cut capacitor must be each attached to the input and output pins. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. µPC1688G Soldering Method Soldering Conditions Recommended Condition Symbol Infrared ray reflow Package peak temperature: 235 ˚C, Hour: within 30 s. (more than 210 ˚C), Time: 3 times, Limited days: no. Note IR35-00-3 VPS Package peak temperature: 215 ˚C, Hour: within 40 s. (more than 200 ˚C), Time: 3 times, Limited days: no. Note VP15-00-3 Wave soldering Soldering tub temperature: less than 260 ˚C, Hour: within 10 s. Time: Limited days: no.Note WS60-00-1 Pin part heating Pin area temperature: less than 300 ˚C, Hour: within 3 s/pin. Limited days: no.Note Note It is the storage days after opening a dry pack, the storage conditions are 25 ˚C, less than 65 % RH. Caution The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535EJ7V0IF00). 6 µPC1688G [MEMO] 7 µPC1688G ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8