NEC UPC2726T

DATA SHEET
BIPOLAR NALOG NTEGRATED IRCUIT
µPC2726T
1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
DESCRIPTION
The µPC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier.
This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement
equipment applications. This IC can also use as differential oscillator application.
The µPC27×× series is manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process
uses silicon nitride passivation film and gold metallization wirings.
external pollution and prevent corrosion and migration.
These materials can protect the chips from
Thus, this process can produce the ICs with excellent
performance, uniformity and reliability.
FEATURES
• Wide frequency respone − fU= 1.6 GHz @ −3 dB GP, VCC = 5 V
• Power gain − GP = 15 dB @ 5 V
• Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA
• 6 pin mini mold for high-density surface mounting.
ORDERING INFORMATION
PART NUMBER
µPC2726T-E3
PACKAGE
SUPPLYING FORM
6 pin mini mold
Embossed tape 8 mm wide. 3 kp/reel.
Pin 1, 2, 3 face to perforation side of the tape.
* For evaluation sample order, please contact your local NEC sales office. (Part number: µPC2726T)
EQUIVALENT CIRCUIT
PIN CONNECTIONS
<5> VCC
RF IN <6>
<3> RF OUT
3
<1> RF IN
2
1
C1P
RF OUT <4>
(Bottom View)
(Top View)
4
5
6
1. INPUT
2. GND
3. OUTPUT
4. OUTPUT
5. VCC
6. INPUT
4
3
5
2
6
1
<2> GND
Caution: Electro-static sensitive device
Document No. P10873EJ2V0DS00 (2nd edition)
(Previous No. IC-3125)
Date Published March 1997 N
Printed in Japan
©
1994
PPC2726T
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
VCC
Power Dissipation of Package Allowance P D
Input Power
Operating Temperature
Storage Temperature
Pin
Topt
Tstg
6
280
V
mW
0
ð40 to +85
ð55 to +150
dBm
°C
°C
TA = +25 °C
Mounted on 50 u 50 u 1.6 mm
epoxy glass
PWB at TA = +85 °C
TA = +25 °C
RECOMMENDED OPERATING CONDITIONS
PARAMETERS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VCC
4.5
5.0
5.5
V
Operating Temperature
TA
ð40
+25
+85
°C
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5. V, ZL = ZS = 50 :)
PARAMETERS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Circuit Current
ICC
8.0
11.5
15.0
mA
No input signal
Power Gain
GP
11.0
15
17.0
dB
f = 400 MHz
Noise Figure
NF
4.5
6.0
dB
f = 400 MHz
Upper Limit Operating Frequency
fU
1.0
1.6
GHz
TEST CONDITIONS
3 dB down below flat gain at 0.4 GHz
Isolation
ISL
60
dB
f = 400 MHz
Input Return Loss
RLin
2.0
dB
f = 400 MHz
Output Return Loss
RLout
4.0
dB
f = 400 MHz
Maximum Output Level
PO(sat)
ð2
dBm
ð5
f = 400 MHz, Pin = ð10 dBm
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, ZL = ZS = 50 :)
SYMBOL
REFERENCE
VALUE
UNIT
Circuit Current
ICC
2.5
mA
VCC = 2 V, No input signal
Power Gain
GP
4.5
dB
VCC = 2 V, f = 400 MHz
Noise Figure
NF
5.1
dB
VCC = 2 V, f = 400 MHz
fu
2.4
GHz
Isolation
ISL
58
dB
VCC = 2 V, f = 400 MHz
Input Return Loss
RLin
1.0
dB
VCC = 2 V, f = 400 MHz
Output Return Loss
RLout
4.0
dB
VCC = 2 V, f = 400 MHz
Maximum Output Power
PO(sat)
ð14
dBm
VCC = 2 V, f = 400 MHz, Pin = ð10 dBm
3rd Order Intermodulation Distortion
IM3
ð29
dBc
VCC = 2 V, PO(each) = ð25 dBm, f1 = 400 MHz,
f2 = 402 MHz
3rd Order Intermodulation Distortion
IM3
ð45
dBc
VCC = 5 V, PO(each) = ð25 dBm, f1 = 400 MHz,
f2 = 402 MHz
PARAMETERS
Upper Limit Operating Frequency
2
TEST CONDITIONS
3 dB down below flat gain at 0.4 GHz
PPC2726T
TEST CIRCUITS
DC Parameters
VCC
5.0 V
IN
OUT
IN
OUT
AC Parameters
VCC
5.0 V
1 000 pF
CIN1 (1 000 pF)
COUT1 (1 000 pF)
OUT
CIN2 (1 000 pF)
COUT2 (1 000 pF)
IN
IN
OUT
3
PPC2726T
TYPICAL CHARACTERISTICS (Unless otherwise specified TA = +25 °C)
CIRCUIT CURRENT vs. OPERATING
TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
16
20
14
16
ICC – Circuit Current – mA
ICC – Circuit Current – mA
VCC = 5.0 V
No input signals
18
14
12
10
8
6
4
12
10
8
6
4
2
2
0
1
2
3
4
VCC – Supply Voltage – V
0
–40
6
5
–20
2.0 V
0
7
VCC = 2.0 V
NF
100
5
–40 °C
+25 °C
10
VCC = +85 °C
0
VCC = 4.5 V - 5.5 V
3
VCC = 5.0 V
1
0.3
0.1
1.0
–5
0.1
2.0 3.0
0.3
f – Frequency – GHz
ISOLATION vs. FREQUENCY
RETURN LOSS vs. FREQUENCY
0
RLin
RLin – Input Return Loss – dB
RLout – Output Return Loss – dB
ISL – Isolation – dB
VCC = 5.0 V
–20
–40
–60
–80
0.1
0.3
1.0
f – Frequency – GHz
2.0
1.0
f – Frequency – GHz
0
4
80
20
GP – Power Gain – dB
GP – Power Gain – dB
NF – Noise Figure – dB
9
10
60
POWER GAIN vs. FREQUENCY
VCC = 5.5 V
5.0 V
4.5 V
3.0 V
GP
40
Topt – Operating Temperature – °C
NOISE FIGURE, POWER GAIN vs.
FREQUENCY
20
20
0
2.0
3.0
RLout
RLout
RLin
–10
–20
–30
–40
0.1
0.3
1.0
f – Frequency – GHz
2.0
3.0
PPC2726T
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
10
f = 400 MHz
0
VCC = 5.0 V
f = 400 MHz
PO – Output Power – dBm
PO – Output Power – dBm
10
VCC = 5.5 V
VCC = 5.0 V
–10
VCC = 4.5 V
–20
VCC = 2.0 V
–30
–40
–50
–40
–30
–20
–10
TA = –40 °C
–20
–30
–40
Pin – Input Power – dBm
PO – Output Power – dBm
VCC = 5.5 V
VCC = 5.0 V
VCC = 4.5 V
–20
VCC = 2.0 V
–30
–40
–50
–40
–30
–20
PO(sat) – Saturated Output Power – dBm
–8
–10
f = 400 MHz
–20
f = 1 GHz
–30
–40
–30
–20
–10
0
SATURATED OUTPUT POWER vs.
FREQUENCY
3rd ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
VCC = 5.5 V
VCC = 5.0 V
VCC = 4.5 V
–10
–12
VCC = 2.0 V
–14
–16
–18
–20
0.1
0
Pin – Input Power – dBm
–2
–6
0
Pin – Input Power – dBm
0
–4
–10
VCC = 5.0 V
–40
–50
0
–10
0.2
0.5
1
f – Frequency – GHz
2
3
IM3 – 3rd Order Intermodulation Distortion – dBc
PO – Output Power – dBm
f = 1 GHz
–10
–20
OUTPUT POWER vs. INPUT POWER
10
0
–30
Pin – Input Power – dBm
OUTPUT POWER vs. INPUT POWER
10
TA = +85 °C
0
–40
–50
0
–10
TA = +25 °C
60
f1 = 400 MHz
f2 = 402 MHz
50
VCC = 5.5 V
VCC = 5.0 V
VCC = 4.5 V
40
30
VCC = 2.0 V
20
10
–40
–30
–20
0
–10
PO(each) – Output Power of Each Tone – dBm
5
0.35
0.15
0.36
0.04
–80
0.38
0.37
0.39
0.12
0.13
0.11
–90
–100
0.40
0.10
–11
0
–
0.8
1.4
1.2
1.0
–70
4
0.3
6
0.1
1.6
3
0.3 7
0.1
0
0.4
1
0.0
9
0.4
0 2
.
0
8
0
00 .43
0.
07
30
1.8
0.2
12
0
–6
2.0
NE
G
0.4
–1
0
0
1.
8
32
18
0.
0.
0.
0. 31
19
0.9
0.6
0
100 M
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.2
0
1.
3.
0
1.
0
4.0
6.0
400 M
1G
1.
0
0.2
8
0.2
2
–20
0.7
0.6
0.27
0.23
3.
N
2.0
5
0.
0.6
1.8
1.6
0.2
1.0
0.9
0.8
1.4
0.7
0.8
1.4
1.2
1.0
0.9
1.6
0.7
0.6
1.8
5
0.
2.0
–1
0.2
0.3
0.6
10
–10
0
–4
0.
5
0.4
0.26
0.24
0.8
4.0
0.37
0.13
0.38
0.39
0.12
0.11
–100
–90
0.36
0.04
–80
0.35
0.15
(
E
NC
TA
AC – JX
––
RE
––ZO
)
0
1.
0.6
0
0.4
50
0.2
00 9
0.2
0.3
1
–
0.2 0
0
0.6
E
IV
AT
0.4
0.25
0.25
6.0
0.4
1
0.0
9
0.40
0.10
–11
0
–70
4
0.3
6
0.1
3
0.3 7
NE
G
0.4
0.4
0 2
.
0
8
0
00 .43
0.
07
30
0
0
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.2
0
1.
O
C
N
( –Z–+–J–XTANCE CO
) MPO
4
0.6
0.1
0.4
0.2
20
10
1.
0
0.
8
0.6
0.1
0.4
0.2
0.3
C
0
–1
2
–6
0.1
O
0.6
3.
( –Z–+–J–XTANCE CO
) MPO
0.8
4.0
0.2
0.1
0.3 7
3
0.
)
–5
REACTANCE COMPONENT
R
––––
0.2
ZO
32
18
0.
0.2
600
0.
0.1
6
0.3
4
0
70
–5
0.15
0.35
10
20
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
)
20
0.26
0.24
1G
1
0.2
9
0.2
0.2
30
(
)
0.
4
0
E
NC
TA
AC – JX
––
RE
––ZO
10
100 M
0.25
0.25
S22-FREQUENCY
0.14
0.36
80
0.2
0.8
30
E
IV
AT
0.
WAVELE
N
4.0
0.24
0.26
0.13
0.37
6.0
2
REACTANCE COMPONENT
R
––––
0.2
ZO
400 M
0.27
0.2
0.23
8
0.2
2
–20
90
0.23
0.27
8
GTHS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.01
0.0 GENE
7
0.48
3
RA
0.4
0.02
N
O
I
C
T
O
C
E
E
F
L
F
F
0.4
C
E
I
R
ENT IN
0.0TOR
6
7
.03
LE OF
4
D
0
G
.
E
4
N
G
0
REE
0A
0.4
6
0
1
4
S
–
6
0.0
0.0
5
4
15
0. 5
0
0.4 5
5
0
–1
5
0.0
0.
0
44
P
.
T
OS
0.1
14 0.4 6
0 06 40
EN
ITIV
ON
0
ER
4
MP
0. –1
E
O
A
C
0
–10
0
0.1
0
0
T
EN
3.
0.2
0.
0.3
0.8
10
8
20
0.6
50
0.4
0.3
(
0.12
0.38
40
4
0.11
0.39
100
2.0
5
0.
0.6
1.8
50
19
0. 31
0.
0.
0.2
1.6
0.2
1.0
0.9
0.8
1.4
0.7
0.1
0.3 7
3
8
20
8
0.0 2
0.4 20
1
0.10
0.40
110
600
0.
0. 31
19
9
0.0
1
0.4
0
07
43
0. 0
13
–4
WAVELE
NG
1.
0.2
0.
0.1
6
0.3
4
1
0 .2
9
0.2
0.2
70
0
0.1
0.15
0.35
0.2
00 9
0.2
0.3
1
–3
0.2 0
0
0
0.
T
EN
0.14
0.36
80
0.2
4
0.13
0.37
30
0.
0
6
(
90
0.3
0.3
43
0
13
0.12
0.38
40
0.3
0.
0.11
0.39
100
6.0
0.
0
12
0.10
0.40
110
50
07
8
0.0 2
0.4
9
0.0
1
0.4
19
0 . 31
0.
THS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.01
0.0 GENE
7
0.48
3
RA
0.4
0.02
N
O
I
C
T
O
C
E
E
F
L
F
F
0.4
C
E
IENT I
0.0TOR
3
OF R
6
7
N DE
0.0
GLE
4
GRE
0.4
0 AN
0.4
6
E
0
1
4
S
–
6
0.0
0.0
5
4
15
0. 5
0
0.4 5
5
0
–1
5
0.0
0.
0
44
P
.
OS
0.1
14 0.4 6
0 06 40
ENT
ITIV
ON
0
ER
4
MP
0. –1
E
O
A
C
PPC2726T
S PARAMETER
S11-FREQUENCY
0.
0.
18
32
50
0.
0.
18
32
50
PPC2726T
ILLUSTRATION OF THE EVALUATION BOARD FOR TEST CIRCUIT
3.5
7
4
5.5
14
7
16- φ 2.3
14
16.5
10
23
11
4
11
7.2
1.2
3
1
(8.8)
9- φ 0.8
1.2
2
9
35
4
6
8
1
12
5
1
2
14
2
2.06±0.02
2.03
7.23
0.74±0.02
18.9
1.8
2.03
3.8
2.03
9
1.8
18.16±0.02
135°
2 2
2.06±0.02
0.74±0.02
5.44 2.4
2.03
2.06±0.02
11.2
2.03
2.03
23
1
5
(6)
10.2
11
1.8
1
1.2
20.24
4
12.5
3.5
14
8.24
1.52
11.5
7
42
9
14
2
2.03
2
2
2
2
2
(4)
: Through holes
7.28°
2
3.51
29
(2) Back side: GND pattern
(3) Solder plated on pattern
142.23°
0.
(1) 50 × 50 × 0.5 mm double copper clad polyimide board.
135°
1.51
0.
74
°
45
2.03
74
2
(4.83)
2.03
0.
7.23°
Note
DETAIL LAYOUT
t = 0.4
7
PPC2726T
EXAMPLE FOR SYSTEM APPLICATION
DBS tuner
DC AMP DET
1st IF input
RF amp.
ATT RF amp.
MIX.
IF amp.
Sound
Visual
< From ODU. >
µ PC2723T µ PC2726T
PLL
VCO
OP
LPF
8
FM DEMO
PPC2726T
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)
0.3 +0.1
–0.05
2
3
+0.2
1.5 –0.1
+0.2
2.8 –0.3
1
0.13±0.1
0 to 0.1
6
5
4
0.95
0.95
1.9
0.8
+0.2
1.1 –0.1
2.9±0.2
9
PPC2726T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause
undesired oscillation).
(3) Keep the wiring length of the ground pins as short as possible.
(4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the V CC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions.
Other soldering methods and
conditions than the recommended conditions are to be consulted with our sales representatives.
PPC2726T
Soldering process
Soldering conditions
Recommended condition
symbols
Infrared ray reflow
Package peak temperature: 235 °C,
Hour: within 30 s. (more than 210 °C),
Time: 3 times, Limited days; no.*
IR35-00-3
VPS
Package peak temperature: 215 °C,
Hour: within 40 s. (more than 200 °C),
Time: 3 times, Limited days: no.*
VP15-00-3
Wave soldering
Soldering tub temperature: less than 260 °C,
Hour: within 10 s.
Time: 1 time, Limited days: no.
WS60-00-1
Pin part heating
Pin area temperature: less than 300 °C,
Hour: within 3 s.
Limited days: no.*
*: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH.
Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
10
PPC2726T
[MEMO]
11
PPC2726T
The applicatoin circuit and circuit constants shown in this document are for reference only and may not be
employed for mass production of the application system.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.