DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain : 13 dB TYP. @ f = 1 GHz • Excellent frequency response : 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz • Noise figure : 5 dB • Single supply voltage : 5V • Input and output matching : 50 : • Super small package : 6 pin mini mold ORDERING INFORMATION PART NUMBER PPC2711T-E3 PACKAGE SUPPLYING FORM 6 pin mini mold Embossed tape 8 mm wide. Pin 1, 2, 3 face to perforation side of the tape. EQUIVALENT CIRCUIT PIN CONNECTIONS VCC OUT 3 IN 2 1 C1G (Top View) (Bottom View) 4 5 6 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC 4 3 5 2 6 1 GND Caution: Electro-static sensitive devices Document No. P12428EJ2V0DS00 (2nd edition) (Previous No. IC-2948) Date Published March 1997 N Printed in Japan © 1993 PPC2711T ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Supply Voltage VCC 6 V Total Circuit Current ICC 30 mA Power Dissipation PD 280* mW Operating Temperature Topt ð40 to +85 °C Storage Temperature Tstg ð55 to +150 °C Input Power Pin +10 dBm * Mounted on 50 u 50 u 1.6 mm epoxy glass PWB (TA = +85 °C) RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage SYMBOL MIN. TYP. MAX. UNIT VCC 4.5 5.0 5.5 V ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V, ZS = ZL = 50 :) PARAMETERS SYMBOL MIN. TYP. MAX. UNIT Circuit Current ICC 9 12 15 mA No signal Power Gain GP 11 13 16.5 dB f = 1 GHz PO(sat) ð2 +1 Maximum Output Level 2 5 dBm 6.5 dB TEST CONDITIONS f = 1 GHz, Pin = 0 dBm Noise Figure NF f = 1 GHz Upper Limit Operating Frequency fU 2.7 2.9 GHz Isolation ISL 25 30 dB f = 1 GHz Input Return Loss RLin 20 25 dB f = 1 GHz Output Return Loss RLout 9 12 dB f = 1 GHz Gain Flatness 'GP ±0.8 dB f = 0.1 to 2.5 GHz 3 dB down below flat gain f = 0.1 GHz PPC2711T TEST CIRCUIT VCC 1 000 pF C3 6 50 Ω C1 1 IN C2 4 50 Ω OUT 1 000 pF 1 000 pF 2, 3, 5 EXAMPLE OF APPLICATION CIRCUIT VCC 1 000 pF 1 000 pF C3 C6 6 50 Ω C1 IN 6 1 4 1 000 pF C4 C5 1 000 pF 1 000 pF R1 50 to 200 Ω 1 2, 3, 5 4 C2 50 Ω OUT 1 000 pF 2, 3, 5 To stabilize operation, please connect R1, C5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Capacitors for VCC, input and output pins 1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output pins. Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 S fZs).] 3 PPC2711T TYPICAL CHARACTERISTICS (TA = 25 °C) CIRCUIT CURRENT vs. OPERATING TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 20 18 18 16 16 ICC – Circuit Current – mA ICC – Circuit Current – mA VCC = 5.0 V 14 12 10 8 6 4 2 0 14 12 10 8 6 4 2 1 2 3 4 5 0 –60 6 NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 15 5 VCC = 5.5 V 15 GP 5 0 –5 0.1 4 GP – Insertion Power Gain – dB NF – Noise Figure – dB 6 GP – Insertion Power Gain – dB VCC = 5.0 V 10 VCC = 4.5 V VCC = 5.5 V VCC = 4.5 V NF 0.3 VCC = 5.0 V 1.0 20 40 60 3.0 TA = –40 °C TA = +25 °C TA = +85 °C TA = +25 °C 10 VCC = 5.0 V 0.3 1.0 f – Frequency – GHz ISOLATION vs. FREQUENCY INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 0 RLin – Input Return Loss – dB RLout – Output Return Loss – dB VCC = 5.0 V –10 ISL – Isolation – dB 3.0 f – Frequency – GHz VCC = 5.0 V –20 –30 –40 0.3 1.0 f – Frequency – GHz 4 100 TA = –40 °C TA = +85 °C 5 0.1 0 –50 0.1 80 INSERTION POWER GAIN vs. FREQUENCY 20 7 0 –20 Topt – Operating Temperature – °C VCC – Supply Voltage – V 8 –40 3.0 –10 RLout –20 RLin –30 –40 0.1 0.3 1.0 f – Frequency – GHz 3.0 PPC2711T OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 5 5 VCC = 5.0 V f = 1.0 GHz 5.5 V 0 4.5 V –5 PO – Output Power – dBm PO – Output Power – dBm f = 1.0 GHz VCC = 5.0 V –10 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 0 TA = +25 °C –20 °C –40 °C –5 –10 –15 –20 –35 5 +85 °C –30 Pin – Input Power – dBm –25 –20 –15 –10 –5 5 0 Pin – Input Power – dBm OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 5 5 f = 0.5 GHz VCC = 5.0 V 5.5 V 0 PO – Output Power – dBm PO – Output Power – dBm f = 2.0 GHz VCC = 5.0 V –5 4.5 V –10 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 0 f = 2.0 GHz f = 2.9 GHz –10 –15 –20 –35 5 SATURATED OUTPUT POWER vs. FREQUENCY PO(sat) – Saturated Output Power – dBm 10 Pin = 0 dBm VCC = 5.0 V 5 0 4.5 V –5 –10 –15 0.1 0.3 1.0 f – Frequency – GHz –30 –25 –20 –15 –10 –5 5 0 Pin – Input Power – dBm 3.0 IM3 – 3rd Order Intermodulation Distortion – dBc Pin – Input Power – dBm 5.5 V f = 1.0 GHz –5 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –50 f1 = 1 .000 GHz f2 = 1 .002 GHz –40 VCC = 5.0 V –30 5.5 V –20 4.5 V –10 0 –20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0 PO(each) – Output Power of Each Tone – dBm 5 –90 0 –11 0.39 0.11 –100 0.38 0.12 0.37 0.13 0.36 0.04 –80 1.4 1.2 0.35 0.15 –70 4 0.3 6 0.1 1.6 3 0.3 7 0.1 0 0.40 0.10 0.4 1 0.0 0.4 9 0 2 –1 .08 0 00 .43 0. 07 30 1.8 2.0 –1 0.2 20 –6 18 32 0 1.0 0 0.8 0.6 3. 0.9 0.8 4.0 0.7 0 1. 0.1 G 50 0.6 5 6.0 NE G 0.4 0.2 0 1. O C N ( –Z–+–J–XTANCE CO ) MPO 3. 0 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 2.0 5 0. 0.6 1.8 1.6 0.2 1.0 0.9 0.8 1.4 0.7 0.37 0.13 0.8 1.4 1.2 1.0 0.9 1.6 0.7 0.6 1.8 5 0. 2.0 –1 0.2 0. 8 0.6 0.1 0.4 0.2 20 1. 0 0.3 0.8 1. 0 4.0 6.0 1.0 G 8 0.2 8 0.2 2 –20 0. ) ( ) 0 1. 0.4 0.6 8 0. 0.4 –10 0. 0.27 0.23 2.9 G 10 –90 0.36 0.04 –80 0.35 0.15 4 0.3 6 0.1 3 0.3 7 NE G 0.4 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 20 0.26 0.24 ( 0.1 G 0 –5 –70 0.38 0.39 0.12 0.11 –100 0.4 1 0.0 9 0.4 0 2 . 0 8 0 00 .43 0. 07 30 0 0 32 18 0. T NEN PO 2.9 G 0.25 0.25 0. 0.6 0. 3 –4 0.1 1 0 9 0. 50 10 20 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 E NC TA AC – JX –– RE ––ZO 0 0.40 0.10 –11 0 0.1 0.3 7 3 0.2 00 9 0.2 0.3 1 – 0.2 0 0 30 E IV AT 0.6 3. –1 2 –6 0.1 0. 0.2 600 0 OM EC NC TA AC – JX –O– – RE –Z E IV AT 0 1. 0. 4 ( 15 8 0.6 20 10 6 0 0.0 0 .4 5 5 0 1. POS 14 ITIV 0 ER EA CT A ––+JX NCE – ZO – CO M PO N ) 4 6 0.4 4 0.0 50 –1 0.8 4.0 0.2 6.0 0.26 0.24 5 0.4 5 0.0 4 4 0. 06 40 0. –1 0. WAVELE NGTH S 0.01 0.02 TOWARD 0.49 0.0 GENE 0.48 3 RA 0 N O I C T O C E E F L F F 0.4 CIENT 0.0TOR 3 OF RE IN DE 7 0.0 GLE 4 GRE 0 AN 0.4 6 E 0 1 S – 0. 0 0 4.0 0.25 0.25 0.49 0.01 0 0.1 0.24 0.26 0.48 0.02 0 2 0.1 6 0.3 4 0 0.6 70 1 0.2 9 0.2 30 0.2 0.15 0.35 0.2 0 0.1 3. 0 4 0.3 REACTANCE COMPONENT R –––– 0.2 ZO ) 0.23 0.27 0.4 40 ( 6.0 0.3 0.8 0.2 .47 0.6 0.27 0.2 0.23 8 0.2 2 –20 T EN 0.14 0.36 80 19 0. 31 0. WAVELE NG 0.4 –10 2 0.4 20 1 07 0. 3 4 0. 0 13 90 0. 0. 06 44 2.0 5 0. 0.6 1.8 50 10 1 0.13 0.37 –5 0.2 1.6 0.2 1.0 0.9 0.8 1.4 0.7 0.1 0.3 7 3 8 20 0 0.4 0.12 0.38 600 0. 0. 31 19 .08 0.11 0.39 100 0 4 1. 0.2 0. –4 0 0.10 0.40 110 0.1 6 0.3 4 0.2 00 9 0.2 0.3 1 – 0.2 0 0 S22-FREQUENCY .09 70 1 0 .2 9 0.2 0.1 0.15 0.35 0 1.0 G 30 0. T EN 0.14 0.36 80 0 .2 REACTANCE COMPONENT R –––– 0.2 ZO ) 0.13 0.37 30 0.3 0 ( 90 0 .3 0.3 43 0 13 40 6 0.2 0. 0.12 0.38 50 0. 0.11 0.39 100 0.2 07 8 0.0 2 0.4 20 1 0.10 0.40 110 0.4 9 0.0 1 0.4 19 0. 31 0. THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 N O I C T O C E E F L F F 0.4 C E IENT I 0.0TOR 3 OF R 6 7 N DE 0.0 GLE 4 GRE 0.4 0 AN 0.4 6 E 0 1 4 S – 6 0.0 0.0 5 4 15 0. 5 0 0.4 5 5 0 –1 5 0.0 0. 0 44 P . OS 0.1 14 0.4 6 0 06 40 ENT ITIV ON 0 ER 4 MP 0. –1 E O A C PPC2711T S PARAMETER S11-FREQUENCY 0. 0. 18 32 50 0. 0. 18 32 50 PPC2711T Illustration of evaluation board for the test circuit 10 72–φ 0.5 Through holes 10 OUT 15 VCC 30±0.05 IN 0.75 1.2 0.2 4.8 4.8 0.2 15 2.5 2.5 2.5 2.5 3 3 2.5 2.5 2.5 2.5 7.5 7.5 5 5 2 2 9–φ 7.5 Through holes 2.8 1.2 1.2 0.4 3 7.5 φ2 2 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 15 0.4 φ 0.9 0.75 3.6 2.8 φ2 15 30±0.05 (Back side) (Surface) Note (1) 30 u 30 u 0.4 mm double sided copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) : Through holes 7 PPC2711T 6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm) 0.3 +0.1 –0.05 2 3 +0.2 1.5 –0.1 +0.2 2.8 –0.3 1 0 to 0.1 6 5 4 0.95 0.95 1.9 2.9±0.2 8 0.13±0.1 0.8 +0.2 1.1 –0.1 PPC2711T NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause abnormal oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the V CC pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. PPC2711T Soldering method Soldering conditions Recommended condition symbols Infrared ray reflow Package peak temperature: 235 °C, Hour: within 30 s. (more than 210 °C), Time: 3 times, Limited days; no.* IR35-00-3 VPS Package peak temperature: 215 °C, Hour: within 40 s. (more than 200 °C), Time: 3 times, Limited days: no.* VP15-00-3 Wave soldering Soldering tub temperature: less than 260 °C, Hour: within 10 s. Time: 1 time, Limited days: no. WS60-00-1 Pin part heating Pin area temperature: less than 300 °C, Hour: within 3 s. Limited days: no.* *: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 9 PPC2711T [MEMO] 10 PPC2711T [MEMO] 11 PPC2711T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5