NEC UPC2711T-E3

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PPC2711T
2.9 GHz WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
FEATURES
• High power gain
: 13 dB TYP. @ f = 1 GHz
• Excellent frequency response : 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
• Noise figure
: 5 dB
• Single supply voltage
: 5V
• Input and output matching
: 50 :
• Super small package
: 6 pin mini mold
ORDERING INFORMATION
PART NUMBER
PPC2711T-E3
PACKAGE
SUPPLYING FORM
6 pin mini mold
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to perforation side of the tape.
EQUIVALENT CIRCUIT
PIN CONNECTIONS
VCC
OUT
3
IN
2
1
C1G
(Top View)
(Bottom View)
4
5
6
1. INPUT
2. GND
3. GND
4. OUTPUT
5. GND
6. VCC
4
3
5
2
6
1
GND
Caution: Electro-static sensitive devices
Document No. P12428EJ2V0DS00 (2nd edition)
(Previous No. IC-2948)
Date Published March 1997 N
Printed in Japan
©
1993
PPC2711T
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Supply Voltage
VCC
6
V
Total Circuit Current
ICC
30
mA
Power Dissipation
PD
280*
mW
Operating Temperature
Topt
ð40 to +85
°C
Storage Temperature
Tstg
ð55 to +150
°C
Input Power
Pin
+10
dBm
* Mounted on 50 u 50 u 1.6 mm epoxy glass PWB (TA = +85 °C)
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
VCC
4.5
5.0
5.5
V
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V, ZS = ZL = 50 :)
PARAMETERS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Circuit Current
ICC
9
12
15
mA
No signal
Power Gain
GP
11
13
16.5
dB
f = 1 GHz
PO(sat)
ð2
+1
Maximum Output Level
2
5
dBm
6.5
dB
TEST CONDITIONS
f = 1 GHz, Pin = 0 dBm
Noise Figure
NF
f = 1 GHz
Upper Limit Operating Frequency
fU
2.7
2.9
GHz
Isolation
ISL
25
30
dB
f = 1 GHz
Input Return Loss
RLin
20
25
dB
f = 1 GHz
Output Return Loss
RLout
9
12
dB
f = 1 GHz
Gain Flatness
'GP
±0.8
dB
f = 0.1 to 2.5 GHz
3 dB down below flat gain
f = 0.1 GHz
PPC2711T
TEST CIRCUIT
VCC
1 000 pF
C3
6
50 Ω
C1
1
IN
C2
4
50 Ω
OUT
1 000 pF
1 000 pF
2, 3, 5
EXAMPLE OF APPLICATION CIRCUIT
VCC
1 000 pF
1 000 pF
C3
C6
6
50 Ω
C1
IN
6
1
4
1 000 pF
C4
C5
1 000 pF
1 000 pF
R1
50 to 200 Ω
1
2, 3, 5
4
C2
50 Ω
OUT
1 000 pF
2, 3, 5
To stabilize operation,
please connect R1, C5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Capacitors for VCC, input and output pins
1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output
pins.
Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be
supplied against VCC fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF
capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling
capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 S fZs).]
3
PPC2711T
TYPICAL CHARACTERISTICS (TA = 25 °C)
CIRCUIT CURRENT vs.
OPERATING TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
20
20
18
18
16
16
ICC – Circuit Current – mA
ICC – Circuit Current – mA
VCC = 5.0 V
14
12
10
8
6
4
2
0
14
12
10
8
6
4
2
1
2
3
4
5
0
–60
6
NOISE FIGURE AND INSERTION
POWER GAIN vs. FREQUENCY
15
5
VCC = 5.5 V
15
GP
5
0
–5
0.1
4
GP – Insertion Power Gain – dB
NF – Noise Figure – dB
6
GP – Insertion Power Gain – dB
VCC = 5.0 V
10
VCC = 4.5 V
VCC = 5.5 V
VCC = 4.5 V
NF
0.3
VCC = 5.0 V
1.0
20
40
60
3.0
TA = –40 °C TA = +25 °C
TA = +85 °C
TA = +25 °C
10
VCC = 5.0 V
0.3
1.0
f – Frequency – GHz
ISOLATION vs. FREQUENCY
INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs. FREQUENCY
0
RLin – Input Return Loss – dB
RLout – Output Return Loss – dB
VCC = 5.0 V
–10
ISL – Isolation – dB
3.0
f – Frequency – GHz
VCC = 5.0 V
–20
–30
–40
0.3
1.0
f – Frequency – GHz
4
100
TA = –40 °C
TA = +85 °C
5
0.1
0
–50
0.1
80
INSERTION POWER GAIN vs. FREQUENCY
20
7
0
–20
Topt – Operating Temperature – °C
VCC – Supply Voltage – V
8
–40
3.0
–10
RLout
–20
RLin
–30
–40
0.1
0.3
1.0
f – Frequency – GHz
3.0
PPC2711T
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
5
5
VCC = 5.0 V
f = 1.0 GHz
5.5 V
0
4.5 V
–5
PO – Output Power – dBm
PO – Output Power – dBm
f = 1.0 GHz
VCC = 5.0 V
–10
–15
–20
–35
–30
–25
–20
–15
–10
–5
0
0
TA = +25 °C
–20 °C
–40 °C
–5
–10
–15
–20
–35
5
+85 °C
–30
Pin – Input Power – dBm
–25
–20
–15
–10
–5
5
0
Pin – Input Power – dBm
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
5
5
f = 0.5 GHz
VCC = 5.0 V
5.5 V
0
PO – Output Power – dBm
PO – Output Power – dBm
f = 2.0 GHz
VCC = 5.0 V
–5
4.5 V
–10
–15
–20
–35
–30
–25
–20
–15
–10
–5
0
0
f = 2.0 GHz
f = 2.9 GHz
–10
–15
–20
–35
5
SATURATED OUTPUT POWER vs.
FREQUENCY
PO(sat) – Saturated Output Power – dBm
10
Pin = 0 dBm
VCC = 5.0 V
5
0
4.5 V
–5
–10
–15
0.1
0.3
1.0
f – Frequency – GHz
–30
–25
–20
–15
–10
–5
5
0
Pin – Input Power – dBm
3.0
IM3 – 3rd Order Intermodulation Distortion – dBc
Pin – Input Power – dBm
5.5 V
f = 1.0 GHz
–5
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
–50
f1 = 1 .000 GHz
f2 = 1 .002 GHz
–40
VCC = 5.0 V
–30
5.5 V
–20
4.5 V
–10
0
–20 –18 –16 –14 –12 –10 –8
–6
–4
–2
0
PO(each) – Output Power of Each Tone – dBm
5
–90
0
–11
0.39
0.11
–100
0.38
0.12
0.37
0.13
0.36
0.04
–80
1.4
1.2
0.35
0.15
–70
4
0.3
6
0.1
1.6
3
0.3 7
0.1
0
0.40
0.10
0.4
1
0.0
0.4
9
0 2
–1 .08
0
00 .43
0.
07
30
1.8
2.0
–1
0.2
20
–6
18
32
0
1.0
0
0.8
0.6
3.
0.9
0.8
4.0
0.7
0
1.
0.1 G
50
0.6
5
6.0
NE
G
0.4
0.2
0
1.
O
C
N
( –Z–+–J–XTANCE CO
) MPO
3.
0
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
2.0
5
0.
0.6
1.8
1.6
0.2
1.0
0.9
0.8
1.4
0.7
0.37
0.13
0.8
1.4
1.2
1.0
0.9
1.6
0.7
0.6
1.8
5
0.
2.0
–1
0.2
0.
8
0.6
0.1
0.4
0.2
20
1.
0
0.3
0.8
1.
0
4.0
6.0
1.0 G
8
0.2
8
0.2
2
–20
0.
)
(
)
0
1.
0.4
0.6
8
0.
0.4
–10
0.
0.27
0.23
2.9 G
10
–90
0.36
0.04
–80
0.35
0.15
4
0.3
6
0.1
3
0.3 7
NE
G
0.4
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
20
0.26
0.24
(
0.1 G
0
–5
–70
0.38
0.39
0.12
0.11
–100
0.4
1
0.0
9
0.4
0 2
.
0
8
0
00 .43
0.
07
30
0
0
32
18
0.
T
NEN
PO
2.9 G
0.25
0.25
0.
0.6
0.
3
–4 0.1 1
0
9
0.
50
10
20
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
E
NC
TA
AC – JX
––
RE
––ZO
0
0.40
0.10
–11
0
0.1
0.3 7
3
0.2
00 9
0.2
0.3
1
–
0.2 0
0
30
E
IV
AT
0.6
3.
–1
2
–6
0.1
0.
0.2
600
0
OM
EC
NC
TA
AC – JX
–O–
–
RE
–Z
E
IV
AT
0
1.
0.
4
(
15
8
0.6
20
10
6
0
0.0
0 .4 5
5
0
1.
POS
14
ITIV
0
ER
EA
CT
A
––+JX NCE
–
ZO –
CO
M
PO
N
)
4
6
0.4
4
0.0
50
–1
0.8
4.0
0.2
6.0
0.26
0.24
5
0.4 5
0.0
4
4
0. 06 40
0. –1
0.
WAVELE
NGTH
S
0.01
0.02 TOWARD
0.49
0.0 GENE
0.48
3
RA
0
N
O
I
C
T
O
C
E
E
F
L
F
F
0.4
CIENT
0.0TOR
3
OF RE
IN DE
7
0.0
GLE
4
GRE
0 AN
0.4
6
E
0
1
S
–
0.
0
0
4.0
0.25
0.25
0.49
0.01
0
0.1
0.24
0.26
0.48
0.02
0
2
0.1
6
0.3
4
0
0.6
70
1
0.2
9
0.2
30
0.2
0.15
0.35
0.2
0
0.1
3.
0
4
0.3
REACTANCE COMPONENT
R
––––
0.2
ZO
)
0.23
0.27
0.4
40
(
6.0
0.3
0.8
0.2
.47
0.6
0.27
0.2
0.23
8
0.2
2
–20
T
EN
0.14
0.36
80
19
0. 31
0.
WAVELE
NG
0.4
–10
2
0.4 20
1
07
0. 3
4
0. 0
13
90
0.
0. 06
44
2.0
5
0.
0.6
1.8
50
10
1
0.13
0.37
–5
0.2
1.6
0.2
1.0
0.9
0.8
1.4
0.7
0.1
0.3 7
3
8
20
0
0.4
0.12
0.38
600
0.
0. 31
19
.08
0.11
0.39
100
0
4
1.
0.2
0.
–4
0
0.10
0.40
110
0.1
6
0.3
4
0.2
00 9
0.2
0.3
1
–
0.2 0
0
S22-FREQUENCY
.09
70
1
0 .2
9
0.2
0.1
0.15
0.35
0
1.0 G
30
0.
T
EN
0.14
0.36
80
0 .2
REACTANCE COMPONENT
R
––––
0.2
ZO
)
0.13
0.37
30
0.3
0
(
90
0 .3
0.3
43
0
13
40
6
0.2
0.
0.12
0.38
50
0.
0.11
0.39
100
0.2
07
8
0.0 2
0.4 20
1
0.10
0.40
110
0.4
9
0.0
1
0.4
19
0. 31
0.
THS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.01
0.0 GENE
7
0.48
3
RA
0.4
0.02
N
O
I
C
T
O
C
E
E
F
L
F
F
0.4
C
E
IENT I
0.0TOR
3
OF R
6
7
N DE
0.0
GLE
4
GRE
0.4
0 AN
0.4
6
E
0
1
4
S
–
6
0.0
0.0
5
4
15
0. 5
0
0.4 5
5
0
–1
5
0.0
0.
0
44
P
.
OS
0.1
14 0.4 6
0 06 40
ENT
ITIV
ON
0
ER
4
MP
0. –1
E
O
A
C
PPC2711T
S PARAMETER
S11-FREQUENCY
0.
0.
18
32
50
0.
0.
18
32
50
PPC2711T
Illustration of evaluation board for the test circuit
10
72–φ 0.5
Through holes
10
OUT
15
VCC
30±0.05
IN
0.75
1.2 0.2
4.8
4.8
0.2
15
2.5 2.5 2.5 2.5 3 3 2.5 2.5 2.5 2.5
7.5
7.5
5
5
2 2
9–φ 7.5
Through holes
2.8
1.2 1.2
0.4
3
7.5
φ2
2 2
2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5
15
0.4
φ 0.9
0.75
3.6
2.8
φ2
15
30±0.05
(Back side)
(Surface)
Note
(1) 30 u 30 u 0.4 mm double sided copper clad polyimide board.
(2) Back side: GND pattern
(3) Solder plated on pattern
(4)
: Through holes
7
PPC2711T
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)
0.3 +0.1
–0.05
2
3
+0.2
1.5 –0.1
+0.2
2.8 –0.3
1
0 to 0.1
6
5
4
0.95
0.95
1.9
2.9±0.2
8
0.13±0.1
0.8
+0.2
1.1 –0.1
PPC2711T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause
abnormal oscillation).
(3) Keep the track length of the ground pins as short as possible.
(4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the V CC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions.
Other soldering methods and
conditions than the recommended conditions are to be consulted with our sales representatives.
PPC2711T
Soldering method
Soldering conditions
Recommended condition
symbols
Infrared ray reflow
Package peak temperature: 235 °C,
Hour: within 30 s. (more than 210 °C),
Time: 3 times, Limited days; no.*
IR35-00-3
VPS
Package peak temperature: 215 °C,
Hour: within 40 s. (more than 200 °C),
Time: 3 times, Limited days: no.*
VP15-00-3
Wave soldering
Soldering tub temperature: less than 260 °C,
Hour: within 10 s.
Time: 1 time, Limited days: no.
WS60-00-1
Pin part heating
Pin area temperature: less than 300 °C,
Hour: within 3 s.
Limited days: no.*
*: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH.
Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
9
PPC2711T
[MEMO]
10
PPC2711T
[MEMO]
11
PPC2711T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5