DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1676G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µPC1676G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide band amplifier covers from HF band to UHF band. FEATURES • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below flat gain. • High power gain : 22 dB TYP. @ f = 0.5 GHz. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V • Input and output matching 50 Ω. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage VCC 6 V Total Power Dissipation PT 200 mW Operating Temperature Topt −40 to +85 °C Storage Temperature Tstg −55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Circuit Current ICC 14 19 24 mA No Signal Power Gain GP 19 22 24 dB f = 0.5 GHz Noise Figure NF 4.5 6.0 dB f = 0.5 GHz Upper Limit Operating Frequency TEST CONDITIONS fu 1.0 1.2 GHz Isolation ISL 24 28 dB f = 0.5 GHz Input Return Loss RLin 9 12 dB f = 0.5 GHz Output Return Loss RLout 6 9 dB f = 0.5 GHz PO 3 5 dBm Maximum Output Level 3 dB down below flat gain f = 0.5 GHz, Pin = 0 dBm NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Document No. P12447EJ2V0DS00 (2nd edition) (Previous No. IC-1891) Date Published March 1997 N Printed in Japan © 1989 µPC1676G TYPICAL CHARACTERISTICS (TA = 25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING TEMPERATURE 30 ICC-Circuit Current-mA ICC-Circuit Current-mA 25 20 15 10 20 10 5 0 0 1 2 3 4 5 6 −50 VCC-Supply Voltage-V 30 0 50 100 Topt-Operating Temperature-°C NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 30 INSERTION POWER GAIN vs. FREQUENCY 5 5.0 V GP 4.5 V 20 NF VCC = 5.5 V 10 5.0 V 4.5 V 0 0 60 100 200 500 1000 GP-Insertion Power Gain-dB NF-Noise Figure-dB 10 GP-Insertion Power Gain-dB VCC = 5.5 V VCC = 5 V TA = −40 °C 20 +25 °C 10 +85 °C 0 2000 60 100 −20 −30 100 200 500 f-Frequency-MHz 2 1000 2000 RLin-Input Return Loss-dB RLout-Output Return Loss-dB ISL-Isolation-dB VCC = 5 V −10 60 500 1000 2000 INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY REVERSE INSERTION GAIN vs. FREQUENCY 0 200 f-Frequency-MHz f-Frequency-MHz VCC = 5 V 0 −10 RLout −20 −30 60 RLin 100 200 500 f-Frequency-MHz 1000 2000 µPC1676G VCC = 5 V f = 500 MHz Po-Output Power-dBm 10 0 −10 −20 −30 −20 −10 IM3-3rd Order Intermodulation Distortion-dBc OUTPUT POWER vs. INPUT POWER 0 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE f1 = 500 MHz f2 = 504 MHz −50 5.5 V −40 5.0 V 4.5 V −30 −20 −10 −20 −10 0 Pout-Output Power of Each Tone-dBm Pin-Input Power-dBm S-PARAMETER VCC = 5 V, ZO = 50 S11 ∠ S11 S21 ∠ S21 S12 ∠ S12 S22 ∠ S22 100 0.072 −26.5 8.955 −15.3 0.034 −2.0 0.220 171.2 200 0.093 −63.5 9.327 −31.3 0.035 −3.4 0.233 161.3 400 0.175 −120.4 11.021 −66.2 0.038 −8.4 0.303 139.4 600 0.355 −176.4 14.504 −114.3 0.042 −18.4 0.408 107.7 800 0.485 118.7 14.530 177.1 0.037 −25.7 0.361 65.5 1000 0.387 77.5 9.478 123.1 0.044 −20.5 0.231 61.6 1200 0.298 59.2 6.301 85.6 0.057 −28.3 0.251 68.0 1400 0.243 50.5 4.562 53.8 0.070 −41.5 0.292 61.9 1600 0.208 47.1 3.506 24.5 0.083 −56.4 0.313 51.5 f (MHz) 3 µPC1676G PACKAGE DIMENSIONS EQUIVALENT CIRCUIT +VCC PACKAGE DIMENSIONS (Units: mm) +0.2 3 IN +0.1 0.4 −0.05 4 5° GND 0 to 0.1 +0.1 0.16 −0.06 0.8 +0.1 0.6 −0.05 1 (1.9) (1.8) 0.95 0.95 2.9±0.2 +0.2 −3.1 1.1 5° 5° 5° PIN CONNECTIONS 1. GND 2. OUTPUT 3. VCC 4. INPUT 4 OUT +0.1 +0.2 −0.1 2 1.5 0.4 −0.05 +0.1 0.4 −0.05 2.8 −0.3 µPC1676G [MEMO] 5 µPC1676G [MEMO] 6 µPC1676G [MEMO] 7 µPC1676G No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5