To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μPC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics. This IC is manufactured using our UHSK3 (Ultra High Speed Process) silicon germanium bipolar process. FEATURES • Low current : ICC = 4.3 mA TYP. • Power gain : GP = 22 dB TYP. @ f = 1.0 GHz : GP = 22 dB TYP. @ f = 2.2 GHz • Gain flatness : ΔGP = 0.4 dB TYP. @ f = 1.0 to 2.2 GHz • Noise figure : NF = 4.0 dB TYP. @ f = 1.0 GHz : NF = 4.0 dB TYP. @ f = 2.2 GHz : PO (1 dB) = −7.5 dBm TYP. @ f = 1.0 GHz • High linearity : PO (1 dB) = −9.5 dBm TYP. @ f = 2.2 GHz • Supply voltage : VCC = +3.0 to +3.6 V • Port impedance : input/output 50 Ω APPLICATIONS • IF amplifiers in DBS LNB, other L-band amplifiers, etc. ORDERING INFORMATION Part Number μPC3242TB-E3 Order Number Package μPC3242TB-E3-A 6-pin super minimold (Pb-Free) Marking C3Z Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPC3242TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10803EJ01V0DS (1st edition) Date Published March 2010 NS Printed in Japan 2010 μPC3242TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View) 2 C3Z 3 1 (Bottom View) 4 3 4 4 3 5 2 5 5 2 6 1 6 6 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC 1 PRODUCT LINE-UP OF 5 V or 3.3 V-BIAS SILICON MMIC WIDE BAND AMPLIFIER (TA = +25°C, VCC = +5.0 V or +3.3 V, ZS = ZL = 50 Ω) Part No. μPC2711TB VCC ICC GP NF PO (sat) PO (1 dB) (V) (mA) (dB) (dB) (dBm) (dBm) +5.0 12.0 13.0 (1.0 GHz) 5.0 (1.0 GHz) +1.0 (1.0 GHz) – Package 6-pin super Marking C1G μPC2712TB 12.0 20.0 (1.0 GHz) 4.5 (1.0 GHz) +3.0 (1.0 GHz) μPC3215TB 14.0 20.5 (1.5 GHz) 2.3 (1.5 GHz) +3.5 (1.5 GHz) +1.5 (1.5 GHz) C3H μPC3224TB 9.0 21.5 (1.0 GHz) 4.3 (1.0 GHz) +4.0 (1.0 GHz) –3.5 (1.0 GHz) C3K 21.5 (2.2 GHz) 4.3 (2.2 GHz) +1.5 (2.2 GHz) –5.5 (2.2 GHz) 22.0 (1.0 GHz) 4.7 (1.0 GHz) –1.0 (1.0 GHz) –6.5 (1.0 GHz) 22.0 (2.2 GHz) 4.6 (2.2 GHz) –3.5 (2.2 GHz) –8.0 (2.2 GHz) 25.0 (1.0 GHz) 4.3 (1.0 GHz) – +1.0 (1.0 GHz) 24.5 (2.2 GHz) 4.5 (2.2 GHz) – –4.0 (2.2 GHz) 22.0 (1.0 GHz) 4.0 (1.0 GHz) –0.5 (1.0 GHz) –7.5 (1.0 GHz) 22.0 (2.2 GHz) 4.0 (2.2 GHz) –4.0 (2.2 GHz) –9.5 (2.2 GHz) μPC3227TB μPC3240TB μPC3242TB 4.8 +3.3 13.0 4.3 – Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Data Sheet PU10803EJ01V0DS minimold C1H C3P C3W C3Z μPC3242TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C 4.0 V Total Circuit Current ICC TA = +25°C 10 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin −10 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage VCC +3.0 +3.3 +3.6 V Operating Ambient Temperature TA −40 +25 +85 °C Data Sheet PU10803EJ01V0DS 3 μPC3242TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = +3.3 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No input signal 3.6 4.3 5.0 mA Power Gain 1 GP1 f = 0.25 GHz, Pin = −40 dBm 19 22 25 dB Power Gain 2 GP2 f = 1.0 GHz, Pin = −40 dBm 19 22 25 Power Gain 3 GP3 f = 1.8 GHz, Pin = −40 dBm 19 22 25 Power Gain 4 GP4 f = 2.2 GHz, Pin = −40 dBm 19 22 25 Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz −10 −7.5 − Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz −12.5 −9.5 − Noise Figure 1 NF1 f = 1.0 GHz − 4.0 4.8 Noise Figure 2 NF2 f = 2.2 GHz − 4.0 4.8 Isolation 1 ISL1 f = 1.0 GHz, Pin = −40 dBm 31 36.5 − Isolation 2 ISL2 f = 2.2 GHz, Pin = −40 dBm 34 40.5 − Input Return Loss 1 RLin1 f = 1.0 GHz, Pin = −40 dBm 10 14 − Input Return Loss 2 RLin2 f = 2.2 GHz, Pin = −40 dBm 6 8.5 − Output Return Loss 1 RLout1 f = 1.0 GHz, Pin = −40 dBm 8 11 − Output Return Loss 2 RLout2 f = 2.2 GHz, Pin = −40 dBm 8 11 − dBm dB dB dB dB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, VCC = +3.3 V, ZS = ZL = 50 Ω, unless otherwise specified) Parameter Symbol Test Conditions Reference Value Unit dB Power Gain 5 GP5 f = 2.6 GHz, Pin = −40 dBm 20.5 Power Gain 6 GP6 f = 3.0 GHz, Pin = −40 dBm 19 Gain Flatness ΔGP f = 1.0 to 2.2 GHz, Pin = −40 dBm 0.4 dB dBm Saturated Output Power 1 PO (sat) 1 f = 1.0 GHz, Pin = −15 dBm −0.5 Saturated Output Power 2 PO (sat) 2 f = 2.2 GHz, Pin = −15 dBm −4.0 K factor 1 K1 f = 1.0 GHz, Pin = −40 dBm 2.5 − K factor 2 K2 f = 2.2 GHz, Pin = −40 dBm 3.4 − dBm Output 3rd Order Intercept Point 1 OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz 1.5 Output 3rd Order Intercept Point 2 OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz −0.5 Input 3rd Order Intercept Point 1 IIP31 f1 = 1 000 MHz, f2 = 1 001 MHz −20 Input 3rd Order Intercept Point 2 IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz −22 f1 = 1 000 MHz, f2 = 1 001 MHz, 22 dBc 28.5 dBc 2nd Order Intermodulation Distortion IM2 dBm Pin = −40 dBm/tone 2nd Harmonics 4 2f0 f0 = 1.0 GHz, Pin = −40 dBm Data Sheet PU10803EJ01V0DS μPC3242TB TEST CIRCUIT C4 1 000 pF VCC C3 1 000 pF C1 100 pF IN 6 1 OUT 4 Microstrip Line 2, 3, 5 C2 100 pF Microstrip Line GND ZS = ZL = 50 Ω The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C1, C2 Chip Capacitor 100 pF C3 Chip Capacitor 1 000 pF C4 Feed-through Capacitor 1 000 pF CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. Data Sheet PU10803EJ01V0DS 5 μPC3242TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C 3Z 1 IN Top View 3 2 6 C2 C1 OUT C3 4 5 Mounting direction C4: Feed-through Capacitor (Unit: mm) Notes 1. 30 × 30 × 0.4 mm double sided 35 μ m copper clad COMPONENT LIST Type Value polyimide board. Size 2. Back side: GND pattern 6 C1, C2 Chip Capacitor 100 pF 1608 C3 Chip Capacitor 1 000 pF 1608 C4 Feed-through Capacitor 1 000 pF − 3. Au plated on pattern 4. : Through holes Data Sheet PU10803EJ01V0DS μPC3242TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = +3.3 V, ZS = ZL = 50 Ω, unless otherwise specified) CURCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 8 6.0 No Input Signal 5.5 VCC = +3.3 V No Input Signal TA = +85°C 5 4 3 +25°C 2 1 0 0 Power Gain GP (dB) Circuit Current ICC (mA) 6 28 27 26 25 24 23 22 21 20 19 18 17 16 15 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 –40 –20 0 20 40 60 80 INPUT RETURN LOSS vs. FREQUENCY 0 Pin = –40 dBm Pin = –40 dBm –5 VCC = +3.6 V +3.3 V +3.0 V VCC = +3.6 V –10 –15 –20 +3.3 V –25 –30 +3.0 V –35 –40 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency f (GHz) Frequency f (GHz) ISOLATION vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 Pin = –40 dBm Pin = –40 dBm Output Return Loss RLout (dB) Isolation ISL (dB) 3.0 POWER GAIN vs. FREQUENCY –20 –25 +3.0 V +3.3 V VCC = +3.6 V –40 –45 –50 0 3.5 Operating Ambient Temperature TA (°C) –15 –35 4.0 Supply Voltage VCC (V) –10 –30 4.5 2.0 4.0 0 –5 5.0 2.5 –40°C Input Return Loss RLin (dB) Circuit Current ICC (mA) 7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 –5 –10 –15 VCC = +3.0 V –20 –25 +3.3 V +3.6 V –30 –35 –40 0 Frequency f (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10803EJ01V0DS 7 μPC3242TB 28 27 Pin = –40 dBm 26 25 TA = –40°C 24 23 22 21 20 +25°C +85°C 19 18 17 16 15 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 INPUT RETURN LOSS vs. FREQUENCY 0 –30 +25°C –35 0 Pin = –40 dBm –20 –25 TA = +85°C –35 –40 +25°C –40°C –5 –10 TA = +85°C –15 –20 –25 +25°C –40°C –30 –35 –40 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency f (GHz) OUTPUT POWER vs. INPUT POWER 10 5 5 0 +3.3 V –10 –15 –20 –25 +3.0 V Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = +3.6 V 0 –5 VCC = +3.6 V –10 +3.0 V –15 –20 +3.3 V –25 f = 1.0 GHz –30 –50 –45 –40 –35 –30 –25 –20 –15 –10 f = 2.2 GHz –30 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency f (GHz) 10 –5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Isolation ISL (dB) –25 ISOLATION vs. FREQUENCY –15 –50 0 –40°C –20 Frequency f (GHz) –10 –45 –15 Frequency f (GHz) Pin = –40 dBm –30 –10 –40 0 0 –5 TA = +85°C Pin = –40 dBm –5 Input Return Loss RLin (dB) Power Gain GP (dB) POWER GAIN vs. FREQUENCY Data Sheet PU10803EJ01V0DS μPC3242TB OUTPUT POWER vs. INPUT POWER 10 10 5 5 Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 0 –5 TA = –40°C –10 –15 +25°C +85°C –20 0 –5 TA = –40°C –10 –15 +25°C –20 +85°C –25 –25 f = 1.0 GHz –30 –50 –45 –40 –35 –30 –25 –20 –15 –10 f = 2.2 GHz –30 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (dBm) Input Power Pin (dBm) NOISE FIGURE vs. FREQUENCY 5.5 5.0 5.0 Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY 5.5 VCC = +3.0 V 4.5 4.0 3.5 +3.6 V +3.3 V TA = +85°C 4.5 4.0 +25°C 3.5 3.0 3.0 –40°C 2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency f (GHz) Frequency f (GHz) K FACTOR vs. FREQUENCY 10.0 9.0 Pin = –40 dBm 8.0 K Factor K 7.0 6.0 VCC = +3.0 V 5.0 4.0 +3.6 V 3.0 2.0 +3.3 V 1.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10803EJ01V0DS 9 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 VCC = +3.3 V –70 f1 = 1 000 MHz –80 f2 = 1 001 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 VCC = +3.6 V –70 f1 = 1 000 MHz –80 f2 = 1 001 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 VCC = +3.0 V –70 f1 = 1 000 MHz –80 f2 = 1 001 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) μPC3242TB OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 IM3 –40 –50 –60 VCC = +3.0 V –70 f1 = 2 200 MHz –80 f2 = 2 201 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 IM3 –40 –50 –60 VCC = +3.3 V –70 f1 = 2 200 MHz –80 f2 = 2 201 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 VCC = +3.6 V –70 f1 = 2 200 MHz –80 f2 = 2 201 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Remark The graphs indicate nominal characteristics. 10 Data Sheet PU10803EJ01V0DS Input Power Pin (1 tone) (dBm) Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 TA = +25°C –70 f1 = 1 000 MHz –80 f2 = 1 001 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 TA = +85°C –70 f1 = 1 000 MHz –80 f2 = 1 001 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 TA = –40°C –70 f1 = 1 000 MHz –80 f2 = 1 001 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) Output Power Pout (1 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (1 tone) (dBm) μPC3242TB OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 TA = –40°C –70 f1 = 2 200 MHz –80 f2 = 2 201 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 TA = +25°C –70 f1 = 2 200 MHz –80 f2 = 2 201 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 10 0 Pout –10 –20 –30 –40 IM3 –50 –60 TA = +85°C –70 f1 = 2 200 MHz –80 f2 = 2 201 MHz –90 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10803EJ01V0DS 11 20 10 0 –10 Pout –20 IM2 –30 –40 –50 VCC = +3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 –60 2nd Order Intermodulation Distortion IM2 (dBc) OUTPUT POWER, IM2 vs. INPUT POWER IM2 vs. INPUT POWER 50 45 40 30 25 20 15 10 5 0 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) 20 10 0 Pout –20 IM2 –30 –40 –50 VCC = +3.3 V f1 = 1 000 MHz f2 = 1 001 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 –60 2nd Order Intermodulation Distortion IM2 (dBc) OUTPUT POWER, IM2 vs. INPUT POWER –10 IM2 vs. INPUT POWER 50 45 40 30 25 20 15 10 5 0 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM2 vs. INPUT POWER 20 10 0 Pout –20 –30 IM2 –40 –50 VCC = +3.6 V f1 = 1 000 MHz f2 = 1 001 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 –60 IM2 vs. INPUT POWER 50 45 40 VCC = +3.6 V f1 = 1 000 MHz f2 = 1 001 MHz 35 30 25 20 15 10 5 0 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) Input Power Pin (1 tone) (dBm) Remark The graphs indicate nominal characteristics. 12 VCC = +3.3 V f1 = 1 000 MHz f2 = 1 001 MHz 35 Input Power Pin (1 tone) (dBm) –10 VCC = +3.0 V f1 = 1 000 MHz f2 = 1 001 MHz 35 Input Power Pin (1 tone) (dBm) 2nd Order Intermodulation Distortion IM2 (dBc) Output Power Pout (1 tone) (dBm) 2nd Order Intermodulation Distortion IM2 (2 tone) (dBm) Output Power Pout (1 tone) (dBm) 2nd Order Intermodulation Distortion IM2 (2 tone) (dBm) Output Power Pout (1 tone) (dBm) 2nd Order Intermodulation Distortion IM2 (2 tone) (dBm) μPC3242TB Data Sheet PU10803EJ01V0DS 20 10 0 –10 Pout –20 IM2 –30 –40 –50 TA = –40°C f1 = 1 000 MHz f2 = 1 001 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 –60 2nd Order Intermodulation Distortion IM2 (dBc) OUTPUT POWER, IM2 vs. INPUT POWER IM2 vs. INPUT POWER 50 45 40 30 25 20 15 10 5 0 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) 20 10 0 Pout –20 IM2 –30 –40 –50 TA = +25°C f1 = 1 000 MHz f2 = 1 001 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 –60 2nd Order Intermodulation Distortion IM2 (dBc) OUTPUT POWER, IM2 vs. INPUT POWER –10 IM2 vs. INPUT POWER 50 45 40 30 25 20 15 10 5 0 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) OUTPUT POWER, IM2 vs. INPUT POWER 20 10 0 Pout –20 –30 TA = +25°C f1 = 1 000 MHz f2 = 1 001 MHz 35 Input Power Pin (1 tone) (dBm) –10 TA = –40°C f1 = 1 000 MHz f2 = 1 001 MHz 35 Input Power Pin (1 tone) (dBm) IM2 –40 –50 TA = +85°C f1 = 1 000 MHz f2 = 1 001 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 –60 2nd Order Intermodulation Distortion IM2 (dBc) Output Power Pout (1 tone) (dBm) 2nd Order Intermodulation Distortion IM2 (2 tone) (dBm) Output Power Pout (1 tone) (dBm) 2nd Order Intermodulation Distortion IM2 (2 tone) (dBm) Output Power Pout (1 tone) (dBm) 2nd Order Intermodulation Distortion IM2 (2 tone) (dBm) μPC3242TB IM2 vs. INPUT POWER 50 45 40 TA = +85°C f1 = 1 000 MHz f2 = 1 001 MHz 35 30 25 20 15 10 5 0 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (1 tone) (dBm) Input Power Pin (1 tone) (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10803EJ01V0DS 13 OUTPUT POWER, 2f0 vs. INPUT POWER OUTPUT POWER, 2f0 vs. INPUT POWER 20 20 10 10 Output Power Pout (dBm) 2nd Harmonics 2f0 (dBm) Output Power Pout (dBm) 2nd Harmonics 2f0 (dBm) μPC3242TB 0 –10 Pout –20 –30 2f0 –40 –50 VCC = +3.0 V f = 1 000 MHz –60 –20 –30 2f0 –40 –50 TA = –40°C f = 1 000 MHz Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, 2f0 vs. INPUT POWER OUTPUT POWER, 2f0 vs. INPUT POWER 20 20 10 10 0 –10 Pout –20 –30 2f0 –40 –50 VCC = +3.3 V f = 1 000 MHz –60 0 –10 Pout –20 –30 2f0 –40 –50 TA = +25°C f = 1 000 MHz –60 –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (dBm) OUTPUT POWER, 2f0 vs. INPUT POWER OUTPUT POWER, 2f0 vs. INPUT POWER 20 20 10 10 0 Output Power Pout (dBm) 2nd Harmonics 2f0 (dBm) Input Power Pin (dBm) Pout –10 –20 –30 2f0 –40 –50 –60 VCC = +3.6 V f = 1 000 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 0 –10 Pout –20 –30 2f0 –40 –50 –60 TA = +85°C f = 1 000 MHz –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 14 Pout –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Output Power Pout (dBm) 2nd Harmonics 2f0 (dBm) Output Power Pout (dBm) 2nd Harmonics 2f0 (dBm) –10 –60 –70 –55 –50 –45 –40 –35 –30 –25 –20 –15 –10 Output Power Pout (dBm) 2nd Harmonics 2f0 (dBm) 0 Data Sheet PU10803EJ01V0DS μPC3242TB S-PARAMETERS (TA = +25°C, VCC = 3.3 V, Pin = −40 dBm) S11−FREQUENCY 1 : 1 000 MHz 2 : 2 200 MHz 47.35 Ω 70.96 Ω 16.60 Ω 41.34 Ω 86.47 Ω 70.37 Ω –7.39 Ω 28.59 Ω 1 2 START : 100 MHz STOP : 5 100 MHz S22−FREQUENCY 1 : 1 000 MHz 2 : 2 200 MHz 1 2 START : 100 MHz STOP : 5 100 MHz Remarks 1. Measured on the test circuit of evaluation board. 2. The graphs indicate nominal characteristics. Data Sheet PU10803EJ01V0DS 15 μPC3242TB S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 16 Data Sheet PU10803EJ01V0DS μPC3242TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet PU10803EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0+0.15 –0.20 1.25±0.1 17 μPC3242TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 18 Data Sheet PU10803EJ01V0DS HS350 μPC3242TB • The information in this document is current as of March, 2010. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E