RENESAS UPD5739T7A-E1-A

PreliminaryData Sheet
μPD5739T7A
R09DS0002EJ0100
Rev.1.00
Jul 6, 2010
SiGe/CMOS Integrated Circuit
4 × 2 IF Switch Matrix with Gain and Tone/Voltage Controller
FEATURES
• 4 independent IF channels, integral switching to channel input to either channel output.
• 4 × 2 switch matrix with integrated IF amplifier and switch control - Tone/Voltage.
- Switch’s Enable mode is linked VCC external pins.
• Frequency range
: f = 950 MHz to 2 150 MHz
• High isolation
: ISLD/U = 30 dB TYP. @Worst mode
• Power gain
: GP = 18 dB TYP. @ ZS = ZL = 50 Ω
• Power gain flatness
: ΔGP = 1.0 dB TYP.
• Surface mounting
: 28-pin 5 × 5 mm square micro lead package (28-pin plastic QFN (0.5 mm pitch))
APPLICATIONS
• DBS IF switching
• Multiswitch, Switch box
• 4 × 2 switching application for microwave signal
ORDERING INFORMATION
Part Number
Order Number
Package
μPD5739T7A-E1
μPD5739T7A-E1-A
28-pin plastic QFN
(0.5 mm pitch)
(Pb-Free)
Marking
D5739
Supplying Form
• Embossed tape 12 mm wide
• Pin 8 to 14 face the perforation side of the
tape
• Qty 2.5 kpcs/reel
• Dry packing specification (MSL 3 Equivalent)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5739T7A
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 1 of 12
μPD5739T7A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
+4.0
V
VPOLA
1.465
−55 to +125
−40 to +85
+5
+25
W
°C
°C
dBm
V
VTONE
1
Vp-p
Supply Voltage
VDD,
VCC1, VCC2
Note
Power Dissipation
PD
Storage Temperature
Tstg
Operating Ambient Temperature
TA
Input Power
Pin
POLA Control Input Voltage
(POLA1 and POLA2)
TONE Signal Input Voltage
Note:
Mounted on double-sided copper-clad 50 × 50 × 0.51 mm laminates PWB, TA = +85°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage Note
MIN.
TYP.
MAX.
Unit
VDD,
VCC1, VCC2
Operating Ambient Temperature
TA
POLA Control Input Voltage
VPOLA
+3.0
+3.3
+3.6
V
−40
0
+25
−
+85
21
°C
V
TONE Signal Frequency
TONE Signal Input Voltage
18
0.4
22
0.6
26
0.8
kHz
Vp-p
Note:
Symbol
fTONE
VTONE
VCC1 = VCC2 = VDD
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = VCC1 = VCC2 = +3.3 V, ZS = ZL = 50 Ω for each port, worst mode,
unless otherwise specified)
Parameter
Total Supply Current
Symbol
ICC
Power Gain 1
Power Gain 2
Isolation D/U-ratio 2 Note
Gain 1 dB Compression
Output Power 1
GP1
GP2
ISLD/U 2
PO (1 dB) 1
non–RF, 2 channels active
total current of ICC1, ICC2, and IDD
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 2.15 GHz
Pin = −30 dBm, f = 2.15 GHz
f = 0.95 GHz
Gain 1 dB Compression
Output Power 2
Output Return Loss 1
Output Return Loss 2
Noise Figure 1
Noise Figure 2
PO (1 dB) 2
POLA Control Threshold Voltage,
Channel Selection
Vth_POLA
TONE Signal Threshold
Voltage, Channel Selection
Vth_TONE
Note:
RLout1
RLout2
NF1
NF2
Test Conditions
MIN.
TYP.
MAX.
Unit
33
40
50
mA
15
14.5
25
5
18
17.5
30
8
21
20.5
−
−
dB
dB
dB
dBm
f = 2.15 GHz
3
6
−
dBm
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 2.15 GHz
f = 0.95 GHz
f = 2.15 GHz
OFF to ON
10
10
−
−
14
14
12.5
10.5
11.5
14.5
−
−
12.5
13.5
15.5
dB
dB
dB
dB
V
fTONE = 22 kHz, Duty Cycle = 50%,
pulse wave, OFF to ON
0.1
0.15
0.35
Vp-p
Isolation D/U (Desire/Un-desire) ratio = ⎪(Signal Leakage (off-state)) − (Power Gain (on-state))⎪ at worst mode
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 2 of 12
μPD5739T7A
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VDD = VCC1 = VCC2 = +3.3 V, ZS = ZL = 50 Ω for each port, worst mode,
unless otherwise specified)
Parameter
Supply Current of VCC1, VCC2
Supply Current of VDD
Gain Flatness
Differential Gain Between Active
Channels
Gain Change, selected channel
Isolation D/U Ratio 1 Note
Input Return Loss 1
Input Return Loss 2
Output 3rd Order Intercept Point
1
Output 3rd Order Intercept Point
2
Symbol
Test Conditions
ICC1, ICC2
IDD
ΔG P 1
Pin = −30 dBm,
ΔG P 2
f = 0.95 GHz to 2.15 GHz
Unit
mA
mA
dB
dB
1.0
30
13
10
dB
dB
dB
dB
f1 = 950 MHz,
f2 = 951 MHz
f1 = 2 150 MHz,
f2 = 2 151 MHz
f1 = 950 MHz,
f2 = 951 MHz,
Pout = −5 dBm/tone
19
dBm
15
dBm
44
dBc
f0 = 1.0 GHz, Pout = −15 dBm
Pin = −30 dBm, f = 0.95 GHz
Pin = −30 dBm, f = 2.15 GHz
VPOLA = 21 V
VPOLA = 18 V, OFF to ON
60
2.5
2.5
50
1.0
250
dBc
−
−
μA
μs
μs
ΔG P 3
ISLD/U 1
RLin1
RLin2
OIP31
OIP32
2nd Order Intermodulation
Distortion
IM2
2nd Harmonics
K factor 1
K factor 2
POLA Control Current
POLA Switching Time
TONE Switching Time
2f0
K1
K2
Note:
Reference Value
19
2.0
1.0
1.0
IPOLA
TPOLA
TTONE
Pin = −30 dBm, f =0.95 GHz
Pin = −30 dBm, f =0.95 GHz
Pin = −30 dBm, f =2.15 GHz
fTONE = 22 kHz, Duty Cycle = 50%,
pulse wave, VTONE = 600 mVp-p,
OFF to ON
Isolation D/U (Desire/Un-desire) ratio = ⎪(Signal Leakage (off-state)) − (Power Gain (on-state))⎪ at worst mode
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 3 of 12
μPD5739T7A
PIN CONNECTIONS
(Top View)
(Bottom View)
7 6 5 4 3 2 1
28
27
26
25
24
23
22
D5739
8
9
10
11
12
13
14
Pin 1 Identifier
28
27
26
25
24
23
22
15 16 17 18 19 20 21
1 2 3 4 5 6 7
GND
8
9
10
11
12
13
14
21 20 19 18 17 16 15
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
Pin No.
Pin Name
1
2
3
4
5
6
VCC1
OUT1
GND
GND
GND
GND
8
9
10
11
12
13
GND
IN-B
GND
GND
GND
IN-C
15
16
17
18
19
20
IN-D
GND
GND
GND
GND
OUT2
22
23
24
25
26
27
GND
POLA2
TONE2
VDD
TONE1
POLA1
7
IN-A
14
GND
21
VCC2
28
GND
Remark Heat Sink (Bottom side) : GND
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 4 of 12
μPD5739T7A
TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE
State
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Note:
Output to
Input State
OUT1 OUT2
Mode
Both
OUTs
Enabled
AA
AB
AC
AD
BA
BB
BC
BD
CA
CB
CC
CD
DA
DB
DC
DD
NA
NB
OUT1
Disabled NC
ND
AN
BN
OUT2
Disabled CN
DN
Both OUTs Disabled
IN-A
IN-B
IN-C
IN-D
None
IN-A
IN-B
IN-C
IN-D
None
Control Pins
TONE1
POLA1
TONE2
POLA2
IN-A
IN-B
IN-C
IN-D
IN-A
IN-B
IN-C
IN-D
IN-A
IN-B
IN-C
IN-D
IN-A
IN-B
IN-C
22 kHz
22 kHz
22 kHz
22 kHz
0
0
0
0
0
0
0
0
22 kHz
22 kHz
22 kHz
Low
Low
Low
Low
Low
Low
Low
Low
High
High
High
High
High
High
High
22 kHz
0
0
22 kHz
22 kHz
0
0
22 kHz
22 kHz
0
0
22 kHz
22 kHz
0
0
IN-D
IN-A
IN-B
IN-C
IN-D
22 kHz
Any Note
Any Note
Any Note
Any Note
22 kHz
0
0
22 kHz
Any Note
High
Any Note
Any Note
Any Note
Any Note
Low
Low
High
High
Any Note
22 kHz
22 kHz
0
0
22 kHz
Any Note
Any Note
Any Note
Any Note
Any Note
None
None
Low
Low
High
High
Low
Low
High
High
Low
Low
High
High
Low
Low
High
VCC1
(Enable1)
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
VCC2
(Enable2)
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
High
Low
Low
High
High
Any Note
Any Note
Any Note
Any Note
Any Note
3.3 V
0
0
0
0
3.3 V
3.3 V
3.3 V
3.3 V
0
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
0
0
0
0
0
Any means High or Low, 22 kHz or 0.
Remark Low : under +14 Vdc, High : +15.5 to +19.0 Vdc, VDD = +3.3 Vdc
FUNCTIONAL DIAGRAM
8
VCC1
OUT1
GND
GND
GND
GND
7
IN-A
(Top View)
1
28
IF Amp1
IN-B
GND
GND
GND
IN-C
4 : 16 DECODER
4 × 2 Switch Matrix
GND
GND
Enable1
POLA1
TONE1
Switch
Controller
VDD
TONE2
POLA2
Enable2
GND
GND
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
VCC2
22
OUT2
GND
GND
GND
IN-D
15
GND
IF Amp2
14
21
Page 5 of 12
μPD5739T7A
EVALUATION CIRCUIT
OUT1
1 000 pF
100 pF
VCC1 = +3.3 V
330 pF
RF input
100 pF
8
IN-B
GND
GND
RF input
100 pF
GND
47 nH
1 000 pF
GND
IN-C
POLA1
POLA control = 13 V/18 V
Note
R = 0 kΩ
10 nF
1
TONE1
TONE control = 0/22 kHz,
0.6 Vp-p, pluse
28
IF Amp1
GND
4 : 16 DECODER
100 pF
4 × 2 Switch Matrix
RF input
GND
7
GND
GND
IN-A
GND
Enable1
Switch
Controller
VDD = +3.3 V
1 000 pF
Enable2
GND
GND
GND
GND
RF input
GND
15
GND
IF Amp2
14
22
21
47 nH
IN-D
1 000 pF
10 nF
R = 0 kΩ
TONE2
TONE control = 0/22 kHz,
0.6 Vp-p, pluse
Note
POLA2
POLA control = 13 V/18 V
100 pF
330 pF
VCC2 = +3.3 V
100 pF
1 000 pF
OUT2
Note: R = 0 kΩ (at POLA control = 13 V/18 V)
= 5.6 kΩ (at POLA control = 14 V/18 V)
Remark Low : under +14 Vdc, High : +15.5 to +19.0 Vdc, VDD = +3.3 Vdc
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 6 of 12
μPD5739T7A
TYPICAL CHARACTERISTICS
(TA = +25°C, VDD = VCC1 = VCC2 = +3.3 V, ZS = ZL = 50 Ω for each port, worst mode,
unless otherwise specified)
SUPPLY CURRENT OF VDD
vs. SUPPLY VOLTAGE (Control part)
TOTAL SUPPLY CURRENT
vs. SUPPLY VOLTAGE (IF-Amplifier part)
2.5
No Input Signal
VPOLA = VTONE = 0 V
Supply Current of VDD IDD (mA)
Total Supply Current ICC (mA)
25
20
15
10
5
0
0
1
2
3
4
No Input Signal
VCC = VPOLA = VTONE = 0 V
2.0
1.5
1.0
0.5
0
5
0
1
2
3
4
5
Supply Voltage VDD (V)
Supply Voltage VCC (V)
POLA CONTROL CURRENT vs.
POLA CONTROL INPUT VOLTAGE (Control part)
POLA Control Current IPOLA (μA)
50
45
No input signal
VDD = 3.3 V, VCC = VTONE = 0 V
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
POLA Control Input Voltage VPOLA (V)
ISOLATION D/U RATIO vs. FREQUENCY
0
Isolation D/U Ratio ISLD/U (dB)
Power Gain GP (dB)
POWER GAIN vs. FREQUENCY
22
21
20
19
18
17
16
15
14
13
12
11
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
4.5
Frequency f (GHz)
–10
–20
–30
–40
–50
–60
–70
–80
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
4.5
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 7 of 12
μPD5739T7A
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
20
20
PO (1 dB) = +8.3 dBm
f = 0.95 GHz
15
Output Power Pout (dBm)
Output Power Pout (dBm)
15
10
5
0
–5
–10
–15
–20
PO (1 dB) = +5.9 dBm
10
5
0
–5
–10
–15
–20
–25
–50
–40
–30
–20
–10
10
0
–25
–50
20
–40
–30
OIP3 = +18.8 dBm
10
0
Pout
–10
–20
–30
–40
IM3
–50
f1 = 950 MHz
f2 = 951 MHz
–60
–70
–35
–30
–25
–20
–15
–10
–5
0
Input Power Pin (1 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermoduration Distortion IM3 (1 tone) (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
20
–20
10
0
–10
20
Input Power Pin (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
OIP3 = +14.7 dBm
10
0
Pout
–10
–20
–30
–40
IM3
–50
f1 = 2 150 MHz
f2 = 2 151 MHz
–60
–70
–35
–30
–25
–20
–15
–10
–5
0
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM2 vs. INPUT POWER
OUTPUT POWER, 2f0 vs. INPUT POWER
20
10
0
10
Pout
Output Power Pout (dBm)
2nd Harmonics 2f0 (dBm)
Output Power Pout (1 tone) (dBm)
2nd Order Intermoduration Distortion IM2 (2 tone) (dBm)
Output Power Pout (1 tone) (dBm)
3rd Order Intermoduration Distortion IM3 (1 tone) (dBm)
Input Power Pin (dBm)
30
f = 2.15 GHz
0
–10
–20
–30
IM2
–40
f1 = 950 MHz
f2 = 951 MHz
–50
–60
–30
–25
–20
–15
–10
–10
Pout
–20
–30
–40
–50
2f0
–60
–70
f = 1 000 MHz
–5
Input Power Pin (1 tone) (dBm)
–80
–40
–30
–20
–10
0
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 8 of 12
μPD5739T7A
NOISE FIGURE vs. FREQUENCY
ON AREA OF TONE
TONE Signal Input Voltage VTONE (mVp-p)
13.0
Noise Figure NF (dB)
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
0
500
1 000
1 500
2 000
2 500
3 000
POLA Circuit Output Voltage POLA_OUT (V)
Frequency f (MHz)
450
400
ON area of
TONE
Pulse Signal
(Duty 50%)
350
300
250
200
150
100
OFF→ON
ON→OFF
50
0
1
10 18 26
1 000
100
TONE Signal Frequency fTONE (kHz)
POLA Thereshold Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
OFF→ON
ON→OFF
0.0
–0.5
12
13
14
15
15.5
16
17
18
POLA Circuit Input Voltage POLA_IN (V)
Remark The graphs indicate nominal characteristics.
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 9 of 12
μPD5739T7A
MOUNTING PAD LAYOUT DIMENSIONS
28-PIN 5 × 5 mm SQUARE MICRO LEAD PACKAGE (28-PIN PLASTIC QFN (0.5 mm pitch))
(UNIT: mm)
2.65
2.65
2.1
2.1
0.5
2.1
2.65
3.02
2.1
2.65
0.5
28–0.2
3.02
Remark The mounting pad layout in this document is for reference only.
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 10 of 12
μPD5739T7A
PACKAGE DIMENSIONS
28-PIN 5 × 5 mm SQUARE MICRO LEAD PACKAGE (28-PIN PLASTIC QFN (0.5 mm pitch))
(UNIT: mm)
(Top View)
(Side View)
5.0±0.1
(Bottom View)
0.5
Pin1
0.4±0.05
5.0±0.1
0.72±0.05
(Dimensions of Each Pin Part)
A
3.02±0.1
0.08 MIN.
A
0.2±0.05
(C0.2)
0.5
(0.325)
0.4±0.05
0.08 MIN.
0.2±0.05
3.02±0.1
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Remark A>0
( ) : Reference value
Page 11 of 12
μPD5739T7A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0002EJ0100 Rev.1.00
Jul 6, 2010
Page 12 of 12
μPD5739T7A Data Sheet
Revision History
Rev.
1.00
Date
Jul 6, 2010
Description
Summary
Page
−
First edition issued
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The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
(Note 2)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan, R.O.C.
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
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