DATA SHEET MOS INTEGRATED CIRCUIT µPD16855A/B/C/D DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION This product is the power switch IC with over current limit, used for the power supply bus of the Universal-SerialBus (USB). 2 circuit builds in the Pch power MOSFET in the switch part, and this product realizes low on resistance (100 mΩ TYP.) respectively. And the over current detection, the thermal-shutdown circuit, an under voltage locked-out (UVLO) circuit whose functions are necessary in the Host/HUB-controller of the USB standard are built in. And the over-current-detect result can be reported to the controller by flag-pin. This product builds in each two circuits of the power switch, control-pins and flag-pins, and this IC can be able to control the power supply bus in 2 USB port. There are four kinds of this product by the input logic of the control signal and switch operation in over-current detect. FEATURES • Pch power MOSFET, 2 circuit building in • Over-current detection circuit is built in and its result is outputted from flag-pin (“L” active) • Prevent from dropping power supply by over current limit circuit • Thermal shutdown circuit building in • Under Voltage Locked Out (UVLO) circuit building in • Switch on/off control is possible by the control-pin. • 8 pin DIP/SOP package ORDERING INFORMATION PART NO. PACKAGE µPD16855BC 8-pin plastic DIP (300mil) µPD16855AG 8-pin plastic SOP (225mil) µPD16855BG 8-pin plastic SOP (225mil) µPD16855CG 8-pin plastic SOP (225mil) µPD16855DG 8-pin plastic SOP (225mil) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13020EJ1V0DS00 (1st edition) Date Published February 1999 N CP(K) Printed in Japan © 1998 µPD16855 BLOCK DIAGRAM IN (Input) 7 OUT1 8 (Output1) Ref. Voltage Over Current Detect OUT2 (Output2) 3 FLG2 (Flag Out2) Ref. Voltage Gate Control FLG1 2 (Flag Out1) Gate Control Over Current Detect UVLO Thermal Shutdown 6 1 4 GND CTL1 (Control Input1) CTL2 (Control Input2) Note The internal resister doesn’t connect to input terminal of CTL1 (1 pin) and CTL2 (4 pin). Therefore the input level must be “H” or “L” even if these pins aren’t used. 2 5 Data Sheet S13020EJ1V0DS00 µPD16855 CONNECTION DIAGRAM (TOP VIEW) CTL1 1 8 OUT1 FLG1 2 7 IN FLG2 3 6 GND CTL2 4 5 OUT2 8-Pin DIP/SOP PIN CONFIGURATION PIN No. SYMBOL I/O FUNCTION 1/4 CTL1/CTL2 Input 2/3 FLG1/FLG2 Output Over Current Detect Flag : Active-L, Nch open-drain 6 GND Power Ground 7 IN Power (Input) Power Supply : Source of MOSFET 8/5 OUT1/OUT2 Output Output of Switch : Drain of MOSFET Control : TTL Input DESCRIPTION of µPD16855A/B/C/D FUNCTION Abstract of Function PART No. CTL Input Logic Switch Operation with Over-Current Detect µPD16855AG “H” active Over-Current Limit Operation. Switch Off with CTL Input “L” µPD16855BC/BG “L” active Over-Current Limit Operation. Switch Off with CTL Input “H” µPD16855CG “H” active Switch Off regardless of CTL Input µPD16855DG “L” active Data Sheet S13020EJ1V0DS00 3 µPD16855 PIN CONFIGURATION (H:Hi-level, L:Low-level, ON:output ON state, OFF:output OFF state, X:H or L) µPD16855AG (Active-H) CTL1 FLG1 OUT1 CTL2 FLG2 OUT2 Operating mode H H ON H H ON normal mode H H ON L H OFF only OUT1 is ON L H OFF H H ON only OUT2 is ON L H OFF L H OFF standby mode H L ON H H ON only OUT1 is over-current detect H H ON H L ON only OUT2 is over-current detect X L OFF X L OFF TSD mode X L OFF X L OFF UVLO mode µPD16855BC/BG (Active-L) 4 CTL1 FLG1 OUT1 CTL2 FLG2 OUT2 Operating mode L H ON L H ON normal mode L H ON H H OFF only OUT1 is ON H H OFF L H ON only OUT2 is ON H H OFF H H OFF standby mode L L ON L H ON only OUT1 is over-current detect L H ON L L ON only OUT2 is over-current detect X L OFF X L OFF TSD mode X L OFF X L OFF UVLO mode Data Sheet S13020EJ1V0DS00 µPD16855 µPD16855CG (Active-H and Switch off with over-current detect) CTL1 FLG1 OUT1 CTL2 FLG2 OUT2 Operating mode H H ON H H ON normal mode H H ON L H OFF only OUT1 is ON L H OFF H H ON only OUT2 is ON L H OFF L H OFF standby mode H L OFF H H ON only OUT1 is over-current detect H H ON H L OFF only OUT2 is over-current detect X L OFF X L OFF TSD mode X L OFF X L OFF UVLO mode µPD16855DG (Active-L and Switch off with over-current detect) CTL1 FLG1 OUT1 CTL2 FLG2 OUT2 Operating mode L H ON L H ON normal mode L H ON H H OFF only OUT1 is ON H H OFF L H ON only OUT2 is ON H H OFF H H OFF standby mode L L OFF L H ON only OUT1 is over-current detect L H ON L L OFF only OUT2 is over-current detect X L OFF X L OFF TSD mode X L OFF X L OFF UVLO mode Data Sheet S13020EJ1V0DS00 5 µPD16855 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Conditions Ratings Unit Input Voltage VIN –0.3 to +6 V Flag Voltage VFLG –0.3 to +6 V Flag Current IFLG 50 mA Output Voltage VOUT VIN + 0.3 V Output Current IOUT DC +0.5(VIN = VCTL =5 V) –0.1 (VIN = 0V, VOUT = 5V) A Pulse Width ≤ 100µs Single Pulse +3 Control Input Voltage Power Dissipation DIP VCTL –0.3 to +6 V PD 400 mW 300 SOP Operating Temperature Range TA –40 to +85 °C Channel Temperature Range TCH MAX +150 °C Storage Temperature Range Tstg –55 to +150 °C Note The thermal shutdown circuit (operating temperature is more than 150 °C typ.) builds in this product. RECOMMENDED OPERATING RANGE Parameter 6 Symbol Min Input Voltage VIN Operating Temperature Range TA Max Unit +4 +5.5 V 0 +70 °C Data Sheet S13020EJ1V0DS00 Typ µPD16855 ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS (Unless otherwise specified, VIN = +5V; TA = +25°C) Parameter Circuit Current (only µPD16855A/C) Circuit Current (only µPD16855B/D) Symbol IDD IDD Conditions Min Typ Max Unit VCTL = 0V (both 1 pin & 4 pin), OUT = open 1 5 µA VCTL = VIN, OUT = open 1 1.5 mA VCTL = VIN (both 1 pin & 4 pin), OUT = open 1 5 µA VCTL = 0V, OUT = open 1 1.5 mA 1.0 V Low-level Input Voltage VIL CTL Pin High-level Input Voltage VIH CTL Pin Input Current of CTL pin ICTL VCTL = 0V 0.01 1 µA VCTL = VIN 0.01 1 µA DIP 100 140 mΩ SOP 100 130 Output MOSFET On Resistance Output Leak Current Over Current Detect Threshold Flag Output Resistance Flag Leak Current Operating Voltage of Under Voltage Locked Out Circuit RON 2.0 TA = 0 to +70 °C, IOUT = 500 mA V 10 µA 0.9 1.25 A IO LEAK ITH TA = 0 to +70 °C 0.6 RON F IL = 10 mA 10 25 Ω IO LEAK F VFLAG = 5 V 0.01 1 µA VUVLO VIN : Up 3.2 3.5 3.7 V VIN : Down 3.0 3.3 3.5 V Hysteresis 0.1 0.2 0.3 V Max Unit 12 ms 10 µs 20 µs AC CHARACTERISTICS (Unless otherwise specified, VIN = +5 V; TA = +25 °C) Parameter Symbol Conditions Min 2.5 Typ Output Transition Rising Time tRISE RL = 10 Ω each output Output Transition Falling Time tFALL RL = 10 Ω each output Over Current Detect Delay Time tOVER CTL Input Low-Level Time (only µPD16855A/C) tCTL CTL : H→L→H 20 µs CTL Input High-Level Time (only µPD16855B/D) tCTL CTL : L→H→L 20 µs 5 Data Sheet S13020EJ1V0DS00 7 µPD16855 MEASUREMENT POINT Output Transition Rising Time (at ON)/Output Transition Falling Time (at OFF) at the timing of CTL changing “L” to “H”/“H” to “L” for µPD16855A/C 5 V/3.3 V CTL 10% 0V tRISE tFALL 5V 90% 90% VOUT 10% 0V at the timing of CTL changing “H” to “L”/“L” to “H” for µPD16855A/C 5 V/3.3 V CTL 90% 0V tRISE 5V tFALL 90% VOUT 10% 0V 8 90% Data Sheet S13020EJ1V0DS00 µPD16855 Over Current Detect Delay Time/CTL Input Low-Level Time for µPD16855A/C ITH IOUT µ PD16855A VOUT tOVER µ PD16855C FLG 90% tCTL CTL 90% 90% Over Current Detect Delay Time/CTL Input High-Level Time for µPD16855B/D ITH IOUT µ PD16855B VOUT tOVER µ PD16855D FLG 90% tCTL CTL 10% Data Sheet S13020EJ1V0DS00 10% 9 µPD16855 FUNCTION DESCRIPTION 1. Over current detection The specification of over current detect is 0.6 to 1.25 A (typ. 900mA) in this IC. (500 mA max. in USB standard) This function is that flag-pin turns to Low-level and reports to the USB controller when over current is detected. At this time, output of IC is operated as followed. • µPD16855A/B : Output keep ON-state and over current limited circuit is operated. This function can be prevented from being long-time over current state. • µPD16855C/D : Output turns to off, and isn't based on the state of CTL-pin. When CTL-pin turns to non-active, FLG-pin returns to High-level and Output-pin turn to OFF-state. Immediately the controller should be inputted non-active level to CTL-pin after detecting FLG = “L” not to reach to the state of thermal shutdown. Then, in the case of FLG-pin is High-level and CTL-pin is active level, Output-pin turns to ON-state. To prevent from detecting wrongly the current to the moment, over current detect delay time is set up. This delay time is 10 µs (typ.). Power consumption in this device increases rapidly at the time of current-limitter circuit operation, and channel temperature Tch is likely to escalate. Make a CTL signal non-active, and make switch turn off before Tch of this device exceed absolute maximum rating. Normal Mode 5V Flg more than 10 µ s (typ.) Controlled by CTL-pin ( µ PD16855A/B) 0V Vout Instant Switch off ( µ PD16855C/D) Over current detect threshold Iout 0A in case of current surge 5V Flg µ PD16855 0V IN 1 A~ Iout USB Device OUT + less then 10 µ s (typ.) 0.5 A 10 connection to the moment, it flow the large current Data Sheet S13020EJ1V0DS00 µPD16855 2. Under Voltage Locked Out (UVLO) Circuit UVLO is the circuit for preventing malfunction of the switch by voltage variation. In the Power Up : less than 3.5 V (typ.) and in the Power Down : less than 3.3 V (typ.) OUT : OFF FLG : “L” ( = 0V) Output 5V 3.3 V 3.5 V 5V Input 3. Behavior in the case of Power ON This IC is slowly started up by Soft-Start Operation when IC is powered on. This function is to prevent from flowing large current in the period of charging the capacitor which is connected to Output-pin. In Power ON state, Soft-Start Time is 5ms (typ.) 5V Vin 0V 2.5 ms min. 12 ms max. 10 µ s max. 5V VOUT 0V Data Sheet S13020EJ1V0DS00 11 µPD16855 OPERATING SEQUENCE Power On/Power Off 5V IN (input) GND 5V OUT (output) GND 5V Flg (output) GND 5V µ PD16855A/C CTL (input) GND 5V µ PD16855B/D GND over current detect threshold Iout Note If CTL-pin is active level after IC is powered on, This IC's Output is started Soft-Start Operation (Output Transition Rising Time : 12ms max.). When Power-voltage is less than UVLO operating voltage, FLG-pin is fixed on Low-Level. If CTL1 and CTL2 pins are non-active level, this IC moves to Stand-by mode (IDD = 5 µA max.) Input controlled-signal 5V IN (input) GND 5V OUT (output) GND 5V Flg (output) GND 5V µ PD16855A/C GND 5V CTL (input) µ PD16855B/D GND 12 Data Sheet S13020EJ1V0DS00 µPD16855 Over current detect µPD16855A/B 5V IN (input) 5V Flg (output) GND 5V µ PD16855A GND CTL (input) 5V µ PD16855B GND GND 5V OUT (output) Iout GND over current detect threshold over current detect µPD16855C/D 5V IN (input) GND 5V Flg (output) GND 5V µ PD16855C GND CTL (input) 5V µ PD16855D GND 5V OUT (output) GND over current detect threshold Iout over current detect Note If Over current detect circuit is operated, FLG-pin is Low-Level and over current limit circuit is operated. At this time, output's operation is as followed. µPD16855A/B : output is OFF and Flg-pin is High-Level when CTL-pin is non-active level. µPD16855C/D : output synchronizes in Flg-pin = “L”, and is OFF. Flg-pin is High-Level when CTL-pin is non-active level. And then when CTL-pin turns to active level again, if UVLO and TSD are not operated, Output-pin is reset to ON-state. Data Sheet S13020EJ1V0DS00 13 µPD16855 Thermal shutdown 5V IN (input) Stand-by GND 5V OUT (output) not Stand-by GND 5V Flg (output) GND 5V µ PD16855A/C CTL (input) GND 5V µ PD16855B/D GND Tch Thermal shutdown operating temperature (up) Thermal shutdown operating temperature (down) Note In operating the thermal shutdown, the status of output-pin is OFF. In this case, however, if CTL-pin is kept non-active level, this IC isn’t in stand-by mode. And, thermal shutdown circuit can not be operated in both CTL1-pin and CTL2-pin are non-active level (equal to stand-by mode), if junction-temperature of this IC exceed 150 degree (typ.). 14 Data Sheet S13020EJ1V0DS00 µPD16855 CHARACTERISTICS CURVES (unless otherwise specified, T A = 25 °C, VIN = 5 V) (Nominal) PT - TA Rating Total Power Dissipation PT (mW) 500 DIP 400 SOP 300 200 100 0 −40 0 40 80 120 Ambient Temperature TA (°C) 160 RON - VIN Characteristics Note 140 140 120 120 On Resistance RON (Ω) On Resistance RON (Ω) RON - TA Characteristics Note 100 80 60 40 20 0 −20 0 20 40 60 40 20 4 4.5 5 IDD - TA Characteristics IDD - VIN Characteristics 5.5 6 5.5 6 5.5 6 Current Consumption IDD (mA) 1.0 0.4 0.2 0 20 40 60 0.6 0.4 0.2 4 4.5 5 Ambient Temperature TA (°C) Power Supply VIN (V) IDD STB - TA Characteristics IDD STB - VIN Characteristics 0.10 0.08 0.06 0.04 0.02 0 0.8 0.0 3.5 80 Current Consumption IDD STB ( µ A) Current Consumption IDD (mA) 60 Ambient Temperature VIN (V) 0.6 Current Consumption IDD STB ( µ A) 80 Ambient Temperature TA (°C) 0.8 0.00 −20 100 0 3.5 80 1.0 0.0 −20 200 20 40 60 80 0.10 0.08 0.06 0.04 0.02 0.00 3.5 4 Ambient Temperature TA (°C) 4.5 5 Power Supply VIN (V) Note RON –TA Characteristics and RON – VIN Characteristics show the characteristics for SOP Package. Data Sheet S13020EJ1V0DS00 15 µPD16855 CHARACTERISTICS CURVES (unless otherwise specified, T A = 25 °C, VIN = 5 V) (Nominal) VIL - VIN Characteristics 3.0 Low Level Input Voltage VIL (V) Low Level Input Voltage VIL (V) VIL - TA Characteristics 2.5 2.0 1.5 1.0 0.5 0.0 −20 0 20 40 60 1.5 1.0 0.5 4.5 5.0 VIH - TA Characteristics VIH - VIN Characteristics 5.5 6.0 5.5 6.0 5.5 6.0 Low Level Input Voltage VIL (V) 3.0 2.0 1.5 1.0 0.5 0 20 40 60 80 2.0 1.5 1.0 0.5 0.0 3.5 4.0 4.5 5.0 Ambient Temperature TA (°C) Power Supply VIN (V) ITH - TA Characteristics ITH - VIN Characteristics 1.2 1.1 1.0 0.9 0.8 0.7 0 2.5 20 40 60 80 1.2 1.1 1.0 0.9 0.8 0.7 0.6 3.5 Ambient Temperature TA (°C) 16 4.0 Power Supply VIN (V) Over Current Detect Curent ITH (A) High Level Input Voltage VIH (V) Over Current Detect Curent ITH (A) 2.0 Ambient Temperature TA (°C) 2.5 0.6 −20 2.5 0.0 3.5 80 3.0 0.0 −20 3.0 4.0 4.5 5.0 Power Supply VIN (V) Data Sheet S13020EJ1V0DS00 µPD16855 CHARACTERISTICS CURVES (unless otherwise specified, T A = 25 °C, VIN = 5 V) (Nominal) Output Transition Rising Time Output Transition Falling Time 5 4 4 Voltage (V) Voltage (V) Input Voltage 5 3 2 Output Voltage 3 2 Output Voltage 1 1 0 0 0 1 2 3 0 4 0.4 0.8 1.2 Time ( µ s) Time (ms) UVLO circuit operating voltage Characteristics UVLO Operating Voltage VUVLO (V) 4.0 3.8 UVLO(L→H) 3.6 3.4 UVLO(H→L) 3.2 3.0 −20 0 20 40 Ambient Temperature TA (°C) 60 80 Data Sheet S13020EJ1V0DS00 17 µPD16855 MEASUREMENT CIRCUIT 5V 10 kΩ 10 kΩ 10 Ω CTL1 OUT1 FLG1 IN FLG2 GND CTL2 OUT2 1 µF 10 Ω µ PD16855 18 Data Sheet S13020EJ1V0DS00 µPD16855 APPLICATION CIRCUIT Example 1 5V VBUS D+ D− GND D+ D− 10 kΩ CTL1 OUT1 IN FLG1 FLG2 GND CTL2 OUT2 Over Current Enable 1µF 150 µ F µ PD16855A USB Controller USB OUTPUT Port : 1 port Use µ PD16855A Not need to control by USB-controller (CTL-input is "H"-active) Example 2 3.3 V 5V VBUS D+ D− D+ D− 10 kΩ 10 kΩ GND CTL1 OUT1 FLG1 IN FLG2 GND CTL2 OUT2 Over Current Enable 1 µF 150 µ F 150 µ F µ PD16855B VBUS D+ D− GND USB Controller USB Connector USB OUTPUT Port : 2 port Use µ PD16855B controllable by USB-controller (CTL-input is "L"-active) Timing chart Example 2 5V IN (input) GND 5V OUT (output) Flg (output) GND 5V GND 5V CTL (input) Iout GND over current detect threshold over current detect The application circuits and their parameters are for references only and are not intended for use in actual designin's. Data Sheet S13020EJ1V0DS00 19 µPD16855 APPLICATION CIRCUIT Example 3 5V VBUS D+ D− GND D+ D− 10 kΩ CTL1 FLG1 FLG2 CTL2 Over Current OUT1 IN GND OUT2 1 µF 150 µ F µ PD16855C USB Controller USB OUTPUT Port : 1 port Use µ PD16855C controllable by USB-controller Example 4 3.3 V 5V VBUS D+ D− D+ D− 10 kΩ 10 kΩ GND CTL1 OUT1 FLG1 IN FLG2 GND CTL2 OUT2 Over Current 1µF µ PD16855D 150 µ F 150 µ F VBUS D+ D− GND USB Controller USB Connector USB OUTPUT Port : 2 port Use µ PD16855D Not need to control by USB-controller Timing chart Example 4 5V IN (input) GND 5V OUT (output) Flg (output) GND 5V GND 5V CTL (input) Iout GND over current detect threshold over current detect The application circuits and their parameters are for references only and are not intended for use in actual designin's. 20 Data Sheet S13020EJ1V0DS00 µPD16855 PACKAGE DRAWING 8 PIN PLASTIC DIP (300 mil) 8 5 1 4 10.16 MAX. 4.31 MAX. 7.62 6.4 5.08 MAX. 0.9 MIN. 2.54 0.51 MIN. 3.2 ± 0.3 1.27 MAX. +0.10 0.25 D0.05 0~15° 1.4 MIN. 0.50 ± 0.10 0.25 M Data Sheet S13020EJ1V0DS00 21 µPD16855 8 PIN PLASTIC SOP (225 mil) 22 5 6.0±0.3 4 5.37 MAX. 4.4 0.15 +0.10 −0.05 1.44 1 0.05 MIN. 1.8 MAX 8 1.27 0.5±0.2 0.78 MAX. +0.10 0.40 −0.05 0.8 0.12 M Data Sheet S13020EJ1V0DS00 0.10 µPD16855 RECOMMENDED SOLDERING CONDITIONS Soldering the µPD16855 under the conditions listed in the table below is recommended. For soldering methods and conditions other than those recommended, consult NEC. Surface Mount Type For the details of the recommended soldering conditions of the surface mount type, refer to information document “Semiconductor Device Mounting Technology MANUAL” (C10535E) µPD16855AG, µPD16855BG, µPD16855CG, µPD16855DG Soldering process Soldering conditions Symbol Infrared ray reflow Package peak temperature : 235 °C, Time : 30 seconds MAX.(210 °C MIN.), Number of times : 2 , Number of days : not limited* IR35-00-2 VPS Package peak temperature : 215 °C , Time : 40 seconds MAX.(200 °C MIN.), Number of times : 2 , Number of days : not limited* VP15-00-2 Wave soldering Soldering bath temperature : 260 °C MAX. , Time : 10 seconds MAX., Number of times : 1 , Number of days : not limited* WS60-00-1 Partial heating method Pin temperature : 300 °C MAX. (lead temperature), Time : 3 seconds MAX. (per lead pin), Number of days : not limited* * The number of days the devices can be stored at 25 °C, 65 % RH MAX. after the dry pack has been opened. Caution Do not use two or more soldering methods in condition(except the pin partial heating method). Throught-hole Type µPD16855BC Soldering process Wave soldering Soldering conditions Symbol Soldering bath temperature : 260 °C MAX., Time : 10 seconds MAX. REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system IEI-1212 Quality grade on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E NEC IC Package Manual (CD-ROM) C13388E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E Data Sheet S13020EJ1V0DS00 23 µPD16855 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS device behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 24 Data Sheet S13020EJ1V0DS00 µPD16855 [MEMO] Data Sheet S13020EJ1V0DS00 25 µPD16855 [MEMO] 26 Data Sheet S13020EJ1V0DS00 µPD16855 [MEMO] Data Sheet S13020EJ1V0DS00 27 µPD16855 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8