DATA SHEET MOS INTEGRATED CIRCUIT µPD16882 MONOLITHIC CD-ROM/DVD-ROM 3-PHASE SPINDLE MOTOR DRIVER DESCRIPTION The µPD16882 is a CD-ROM/DVD-ROM 3-phase spindle motor driver consisting of a CMOS controller and MOS bridge outputs. By employing 3-phase full-wave PWM as the drive method and MOSFETs at the output stage, it has been possible to reduce the power consumption of the µPD16882 ever further than the drivers that use bipolar transistors. By using a 30-pin shrink SOP package, a more compact-size has been achieved. FEATURES • Supply voltage for controller block: 5 V, supply voltage for output block: 12 V • Low on-state resistance (total on-state resistance of upper and lower transistors) output RON = 1.1 Ω (TYP.) • Low power consumption due to 3-phase full-wave PWM drive method • On-chip hole bias switch (linked with STB pin) • On-chip IND pulse switching function • START/STOP pin included, acting as a brake during STOP • Brake pin enabling reverse brake and short brake switching • Standby pin included, turning off internal circuit in standby (Output high impedance) • Low current consumption: IDD = 3 mA (Max.), IDD (ST) = 1 µA (Max.) • On-chip thermal shutdown circuit • On-chip undervoltage lockout circuit • Overcurrent protector (can be externally set by external resistor) • On-chip reverse revolution prevention circuit • 30-pin plastic shrink SOP (7.62 mm (300)) ORDERING INFORMATION Part Number µPD16882GS Package 30-pin shrink SOP (7.62 mm (300)) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13966EJ1V0DS00 (1st edition) Date Published February 2001 N CP(K) Printed in Japan © 2001 µPD16882 1. ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Parameter Symbol Supply voltage Output pin voltage Conditions Control block −0.5 to +6.0 V VM Motor block −0.5 to +13.5 V −0.5 to +15.0 V −0.5 to VDD + 0.5 V ±2.0 A/phase VIN Instantaneous output current Note 1 Note 2 Unit VDD VOUT Input voltage Ratings IOP PW ≤ 5 ms, Duty ≤ 10% Power consumption PT 1.0 W Peak junction temperature TJ (MAX) 150 °C Storage temperature range Tstg −55 to +150 °C Notes 1. Allowable current per phase while on-board 2. When mounted on glass epoxy board (100 mm × 100 mm × 1 mm, copper film area: 15%) 2. RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply voltage VDD Control block 4.5 5.0 5.5 V VM Motor block 10.8 12.0 13.2 V Output pin voltage VOUT 14.8 V DC output current IO (DC) −0.5 +0.5 A/Phase Instantaneous output Note current IOP −1.5 +1.5 A/Phase Hole bias current IHB 10 15 mA IND pin output current IFG 0 ±2.5 ±5.0 mA CL pin input voltage VCL 0.1 0.4 V Operating temperature range TA −20 75 °C PW ≤ 5 ms, Duty ≤ 10% Note Allowable current value per phase while on-board 2 Data Sheet S13966EJ1V0DS µPD16882 3. ELECTRICAL SPECIFICATIONS (Unless otherwise specified, TA = 25°°C, VDD = 5.0 V, VM = 12 V) Parameter Symbol Current consumption 1 (during operation) IDD Current consumption (in standby) IDD Conditions MIN. STB = VDD (ST) TYP. MAX. Unit 1.5 3.0 mA 1.0 µA MAX. Unit STB = GND [Spindle driver] Parameter Symbol Conditions MIN. TYP. 1. ST/SP, STB, FGsel, BRsel Input voltage, high VIH Input voltage, low VIL Input pull-down resistor RIND 1.8 VDD V 0.8 V 120 kΩ 75 kHz 2. Controller block Triangle wave oscillation frequency fPWM CT = 330 pF 3. Hole amplifier Common mode input voltage range VHch Hysteresis voltage VHhys Input bias current IHbias 1.0 VH = 2.5 V 3.5 15 V mV 1.0 µA 0.5 V 4. Hole bias block Hole bias voltage VHB IHB = 10 mA IND-pin voltage, high VFG_H IFG = −2.5 mA IND-pin voltage, low VFG_L IFG = +2.5 mA Output on-resistance (upper stage + lower stage) RON IO = 200 mA TA = 20°C to 75°C Leakage current during OFF IDR (OFF) In standby Output turn-on time tON RM Output turn-off time tOFF Star connection 0.3 5. FG output 4.0 V 0.5 V 1.3 1.8 Ω 10 µA 1.0 2.0 µs 1.0 2.0 µs 6. Output block =5Ω 7. Torque command Control reference input voltage range ECR 0.3 4.0 V Control input voltage range EC 0.3 4.0 V Input current IIN 50 µA Note 30 Input voltage difference ECR-EC Dead zone (+) EC_d+ ECR = 1.5 V to 2.5 V EC_d− ECR = 1.5 V to 2.5 V Dead zone (−) Duty = 100% 0.75 0 −100 V +50 +100 mV −50 0 mV 15 mV 8. Overcurrent detection block Input offset voltage VIO −15 Note Dead zone not included. The under voltage lockout circuit (UVLO) operates with a voltage of 4 V TYP. The thermal shutdown circuit (T.S.D.) operates with TCH > 150°C. Data Sheet S13966EJ1V0DS 3 µPD16882 4. PIN FUNCTIONS Package: 30-pin Plastic Shrink SOP (7.62 mm (300)) Pin No. 4 Pin Name 1 IND 2 3 I/O Pin Function O Index signal output pin STB I Standby operation input pin VM − Supply pin for motor block (12 V) 4 VM − Supply pin for motor block (12 V) 5 OUT2 O Motor connection pin 2 6 RF O 3-phase bridge output pin 7 RF O 3-phase bridge output pin 8 OUT1 O Motor connection pin 1 Supply pin for motor block (12 V) 9 VM − 10 VM − Supply pin for motor block (12 V) 11 OUT0 O Motor connection pin 0 12 RF O 3-phase bridge output pin 13 RF O 3-phase bridge output pin 14 ISEN I Sense resistor connection pin 15 CL I Overcurrent detection voltage input pin 16 GND − GND pin 17 BRsel I Brake selection pin 18 ST/SP I Start/stop input pin 19 FGsel I IND pulse selection pin 20 HB O Hole bias pin 21 H0− I Hole signal input pin 0 (−) 22 H0+ I Hole signal input pin 0 (+) 23 H1− I Hole signal input pin 1 (−) 24 H1+ I Hole signal input pin 1 (+) 25 H2− I Hole signal input pin 2 (−) 26 H2+ I Hole signal input pin 2 (+) 27 CT I Oscillation frequency setup capacitor connection pin 28 VDD − Controller block supply pin (5 V) 29 ECR I Control reference voltage input pin 30 EC I Control voltage input pin Data Sheet S13966EJ1V0DS µPD16882 5. BLOCK DIAGRAM IND EC STB ECR VDD VM UVLO OSC VM Q5 CT T.S.D OUT2 + Q6 Phase excitation pulse generator RF RF Q3 OUT1 CMP2 − + CMP1 − H2+ H2− H1+ H1− Q4 VM + VM CMP0 Q1 − H0+ H0− OUT0 HB Q2 RF RF ISEN FGsel Reverse revolution detection circuit CL Caution ST/SP BRsel GND When there is more than one pin of the same kind of pin, all pins should be connected to their targets. Data Sheet S13966EJ1V0DS 5 µPD16882 6. STANDARD CHARACTERISTICS CURVES PT vs. TA Characteristics 1.4 1.2 Total power dissipation PT (W) 25°C 1.0 W 1.0 125°C/W 0.8 0.6 0.4 0.2 75°C 0 −25 0 25 50 75 100 125 150 Ambient temperature TA (°C) Remark It is possible to apply a maximum of 1.0 W of power when the ambient temperature is 25°C or lower. When the ambient temperature is higher than 25°C, derate based on the above chart. It is possible to apply 0.6 W to the IC when the ambient temperature is 75°C, which is within recommended ambient temperature conditions. 6 Data Sheet S13966EJ1V0DS µPD16882 Standard Characteristics Curves (Unless otherwise specified, TA = 25°°C) IDD and IDD (ST) vs. VDD Characteristics IIN vs. VDD Characteristics (EC and ECR pins) Torque command block input current IIN (µA) Circuit current IDD (mA) Circuit current in standby IDD (ST) (µA) 2.0 IDD 1.0 IDD (ST) 0 4.5 5 Controller block supply voltage VDD (V) 5.5 50 EC = 0.3 V, ECR = 4.0 V 40 30 IIN 20 10 0 4.5 VHhys VS. VDD Characteristics (Hole amplifier input) Hole amplifier hysteresis voltage VHhys (mV) VIH and VIL VS. VDD Characteristics (ST/SP, STB, BRsel, and FGsel pins) Input voltage, high VIH (V) Input voltage, low VIL (V) 2.0 1.5 VIH VIL 1.0 4.5 5 5.5 Controller block supply voltage VDD (V) 5 30 25 20 15 10 4.5 5.5 VH = 2.5 V Controller block supply voltage VDD (V) 5 5.5 Controller block supply voltage VDD (V) fPWM vs. VDD Characteristics Ron vs. TA Characteristics 100 1.5 Output on resistance Ron (Ω) PWM oscillation frequency fPWM (kHz) CT = 300 pF fPWM 50 0 4.5 5 Controller block supply voltage VDD (V) 5.5 Ron 1.0 0.5 −20 Data Sheet S13966EJ1V0DS 0 20 40 60 Operating ambient temperature TA (°C) 80 7 µPD16882 7. FUNCTION OPERATION TABLE (1) ST/SP (start/stop) function Turning ON/OFF the spindle can be controlled by the ST/SP pin while the oscillator is operating. When the ST/SP pin is high, the spindle is activated (operating); when it is low, the spindle stops. When the spindle stops, the MOSFET at the high side is ON and the MOSFET at the low side is OFF, serving as a short brake. • ST/SP = “H” Circuit Operation OUT0 OUT1 Input Signal OUT2 Low-side PWM H H H H H H L L L L L L H H L L L L L L H H H H L L L L H H H H H H L L ON OFF ON OFF ON OFF ON OFF ON OFF ON OFF Excited (operates) Regeneration (brake) Excited (operates) Regeneration (brake) Excited (operates) Regeneration (brake) Excited (operates) Regeneration (brake) Excited (operates) Regeneration (brake) Excited (operates) Regeneration (brake) Excited Phase W→V W→U V→U V→W U→W U→V During regeneration (brake), the input signal goes through the channel of the high-side Pch MOSFET. • ST/SP = “L” OUT0 Drive Timing (Motor Output Signal) OUT1 OUT2 − − − Circuit Operation PWM − Short brake (2) Torque control The output stage is driven by applying a differential voltage between the control reference voltage (ECR) and control input voltage (EC) pins (ECR-EC). With this product, the ECR-EC differential voltage and output PWM duty have a linear relationship. The input deadband is ±50 mV TYP. and the duty of the standard model is 100% at 0.75 V (excluding the deadband). The µPD16882 also has a break selection pin (BRsel). When this pin goes high, ECR is less than EC and the brake is applied in the reverse direction (refer to the figure and table on the next page). 8 Data Sheet S13966EJ1V0DS µPD16882 Output duty Forword torque 100% Input deadband ±100 mV MAX. −0.75 V TYP. (−) (+) ECR-EC +0.75 V TYP. 100% Reverse torque If the BRsel pin goes low, a short brake is applied and only the high side is ON if ECR is equal to or less than EC. When the brake is applied in the reverse direction, the µPD16882 detects the reverse revolution of the motor and then stops. For ECR-ER and the logic of the BRsel pin, refer to the table below. BRsel Pin Logic L H ECR > EC Forward Forward ECR < EC Short brake Note Reverse brake Note The µPD16882 stops after it has detected the reverse revolution of the motor. When the motor revolves in the reverse direction, the counter electromotive force flows into the VM pin via the channel of the highside Pch MOSFET. (3) FG pulse selection function This product can vary index signal (FG) output in proportion to the number of revolutions. Depending on the setting of the FGsel pin, either single-phase output or three-phase synthesized output can be selected. For the logic, refer to the table below. FGsel Pin Logic FG pulse output L H Single-phase output 3-phase synthesized output Data Sheet S13966EJ1V0DS 9 µPD16882 (4) Standby function The µPD16882 has a standby function to lower the power consumption when stopped. In the standby status, the oscillator can be stopped to decrease the circuit current. When STB is made low, the spindle enters the standby mode, and goes into a high-impedance state. When the operation mode is restored, it takes the µPD16882 several 10 µs to start up. STB Pin Logic Circuit status 10 L H Standby mode Operation mode Data Sheet S13966EJ1V0DS µPD16882 8. TIMING CHART (1) Hole signal input H0 H1 H2 (2) CMP signal (FGsel: GND, single-phase mode (IND1), FGsel: VDD, 3-phase synthesized mode (IND2)) CMP0 CMP1 CMP2 IND1 IND2 (3) Selection of output MOSFET drive and comparator Q1 Q2 Q3 (SW) Q4 SW Q5 ON Q6 (SW) (SW) SW SW ON ON ON ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON ON Data Sheet S13966EJ1V0DS ON ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON 11 µPD16882 (4) Motor drive waveform PWM OUT0 OUT1 OUT2 12 PWM PWM PWM PWM Data Sheet S13966EJ1V0DS PWM PWM 12 V 47 µ F Data Sheet S13966EJ1V0DS STB CPU CFIL VCL 330 pF 0.2 V RFIL1.8 kΩ Motor U phase Motor V phase Reverse revolution detection circuit CMP0 + − + − HB H0− H0+ H1− H1+ H2− H2+ CL ISEN GND BRsel ST/SP Q2 Q1 CMP1 CMP2 + − CT 200 Ω 330 pF RF Q4 Q3 Phase excitation pulse generator T.S.D OSC VDD FGsel Q6 Q5 UVLO ECR EC RF OUT0 VM VM OUT1 RF RF OUT2 VM VM IND controller Motor W phase Rs 0.2 Ω + CPU CPU CPU HW 200 Ω 15 µ F HV + HU 5V µPD16882 9. APPLICATION CIRCUIT EXAMPLE 13 µPD16882 10. PACKAGE DRAWING 30-Pin Plastic Shrink SOP (7.62 mm (300)) (Unit: mm) 30 16 3° +7° −3° Detail of lead end 1 15 1.55±0.1 13.0 MAX. 7.7±0.3 14 0.8 +0.10 0.35–0.05 0.10 0.9 MAX. 0.20 –0.05 0.1±0.1 +0.10 1.8 MAX. 5.6±0.2 0.6±0.2 0.10 M Data Sheet S13966EJ1V0DS 1.05±0.2 µPD16882 RECOMMENDED SOLDERING CONDITIONS µPD16882 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Surface Mount Type For the details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting Technology Manual (C10535E). µPD16882GS Soldering Method Infrared reflow Soldering Conditions Recommended Condition Symbol Package peak temperature: 235°C, Time: 30 sec. Max. (at 210°C or higher), IR35-00-2 Note Count: two times, Exposure limit: Not limited VPS Package peak temperature: 215°C, Time: 40 sec. Max. (at 200°C or higher), VP15-00-2 Note Count: two times, Exposure limit: Not limited Wave soldering Solder bath temperature: 260°C Max., Time: 10 sec. Max., Count: once, Note Exposure limit: Not limited Partial heating Pin temperature: 300°C Max., Time: 3 sec. Max., Exposure limit: not Note limited WS60-00-1 Note After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). REFERENCE Quality Grades on NEC semiconductor Devices C11531E Semiconductor Device Mounting Technology Manual C10535E NEC Semiconductor Device Reliability/Quality Control System C12769E Semiconductor Selection Guide X13769X Data Sheet S13966EJ1V0DS 15 µPD16882 [MEMO] 16 Data Sheet S13966EJ1V0DS µPD16882 [MEMO] Data Sheet S13966EJ1V0DS 17 µPD16882 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 18 Data Sheet S13966EJ1V0DS µPD16882 Regional Information Some information contained in this document may vary from country to country. Before using any NEC product in your application, pIease contact the NEC office in your country to obtain a list of authorized representatives and distributors. They will verify: • Device availability • Ordering information • Product release schedule • Availability of related technical literature • Development environment specifications (for example, specifications for third-party tools and components, host computers, power plugs, AC supply voltages, and so forth) • Network requirements In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary from country to country. NEC Electronics Inc. (U.S.) NEC Electronics (Germany) GmbH NEC Electronics Hong Kong Ltd. Santa Clara, California Tel: 408-588-6000 800-366-9782 Fax: 408-588-6130 800-729-9288 Benelux Office Eindhoven, The Netherlands Tel: 040-2445845 Fax: 040-2444580 Hong Kong Tel: 2886-9318 Fax: 2886-9022/9044 NEC Electronics Hong Kong Ltd. Velizy-Villacoublay, France Tel: 01-30-67 58 00 Fax: 01-30-67 58 99 Seoul Branch Seoul, Korea Tel: 02-528-0303 Fax: 02-528-4411 NEC Electronics (France) S.A. NEC Electronics Singapore Pte. Ltd. Madrid Office Madrid, Spain Tel: 91-504-2787 Fax: 91-504-2860 United Square, Singapore Tel: 65-253-8311 Fax: 65-250-3583 NEC Electronics (France) S.A. NEC Electronics (Germany) GmbH Duesseldorf, Germany Tel: 0211-65 03 02 Fax: 0211-65 03 490 NEC Electronics (UK) Ltd. Milton Keynes, UK Tel: 01908-691-133 Fax: 01908-670-290 NEC Electronics Taiwan Ltd. NEC Electronics Italiana s.r.l. NEC Electronics (Germany) GmbH Milano, Italy Tel: 02-66 75 41 Fax: 02-66 75 42 99 Scandinavia Office Taeby, Sweden Tel: 08-63 80 820 Fax: 08-63 80 388 Taipei, Taiwan Tel: 02-2719-2377 Fax: 02-2719-5951 NEC do Brasil S.A. Electron Devices Division Guarulhos-SP Brasil Tel: 55-11-6462-6810 Fax: 55-11-6462-6829 J00.7 Data Sheet S13966EJ1V0DS 19 µPD16882 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4