UPS3540 5 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION In addition to its size advantages, Powermite3® package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly, and a unique locking tab acts as an integral heat sink. Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V RMS Reverse Voltage V R (RMS) 28 V Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load@ Tc =90 ºC Storage Temperature Io 5 A IFSM 100 A T stg -55 to +150 ºC Operating Temperature T op -55 to +125 ºC WWW . Microsemi .C OM In Microsemi’s new Powermite3® SMT package, these high efficiency ultrafast rectifiers offer the power handing capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. ! High power surface mount package. ! Guard Ring die construction for transient protection. ! Silicon Schottky rectifiers no reverse voltage recovery. ! Internal heat sink locking tabs ! Low forward voltage. ! Full metallic bottom eliminates flux entrapment ! Compatible with automatic insertion equipment ! Low profile-maximum height of 1mm supplied in 16 mm tape reel- 5000 units/ 13” reel. APPLICATIONS/BENEFITS ! Switching and Regulating Power Supplies. ! Charge Pump Circuits. ! Reduces reverse recovery loss due to low IRM. ! Small foot print 190 X 300 mils 1:1 Actual size THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction-to Bottom Rja (1) 3.2 ºC/Watt (1) When Mounted on PC board with 2 ounce copper pattern. UPS560 Copyright 2003 Rev. 0., 2003-02-13 Microsemi Page 1 UPS3540 5 A Schottky Barrier Rectifier ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Symbol VFm IF = 5 A , Tj = 25 ºC IF = 5 A , Tj = 125 ºC IF = 10 A , Tj = 25 ºC IF = 10 A , Tj = 125 ºC VBR IR = 0.5 mA Irm VR = 40 V, Tj = 25ºC VR = 40 V, Tj =125 ºC CT VR = 4 V; F = 1 MHZ Forward Voltage (Note 1) Reverse Break Down Voltage (Note 1) Reverse Current (Note1) Capacitance Conditions Min Typ. Max 0.47 0.45 0.62 0.59 0.54 Units V 40 V 0.030 2.5 250 0.5 20 mA pF Note: 1 Short duration test pulse used to minimize self – heating effect Copyright 2003 Rev. 0., 2003-02-13 Microsemi Page 2 WWW . Microsemi .C OM Parameter UPS3540 5 A Schottky Barrier Rectifier WWW . Microsemi .C OM Notes: 1. TA = TSOLDERING POINT, RΘJS=3.2°C/W, RΘsa = 0º C/W. 2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions .075" x 1.0", anode pad dimensions 0.25" x 1.0". RΘJA in range of 15-30° C/W. 3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RΘJA in range of 60 - 75° C/W. ELECTRICALS Copyright 2003 Rev. 0., 2003-02-13 Microsemi Page 3 UPS3540 5 A Schottky Barrier Rectifier WWW . Microsemi .C OM 16 mm TAPE 13 INCH REEL Copyright 2003 Rev. 0., 2003-02-13 Microsemi Page 4 UPS3540 5 A Schottky Barrier Rectifier WWW . Microsemi .C OM MECHANICAL Copyright 2003 Rev. 0., 2003-02-13 Microsemi Page 5 UPS3540 5 A Schottky Barrier Rectifier WWW . Microsemi .C OM NOTES: NOTES Copyright 2003 Rev. 0., 2003-02-13 Microsemi Page 6