US3406 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The US3406 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US3406 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) 30V ID 105m 3.6A Applications z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Features Advanced high cell density Trench technology SOT23 Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline D Green Device Available G D S G S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A ID IDM TA=70°C TA=25°C Power Dissipation Units V ±20 V 3.6 Pulsed Drain Current B A Maximum 30 15 1.4 PD TA=70°C Junction and Storage Temperature Range A 2.9 W 0.9 TJ, TSTG °C -55 to 150 Thermal Data Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W US3406 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol , unless otherwise noted) Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 15 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.6A TJ=125°C VGS=4.5V, ID=2.8A gFS Forward Transconductance Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=3.6A Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 5 1.9 100 nA 3 V 50 65 74 100 75 105 7 288 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=3.6A mΩ mΩ S 1 V 2.5 A 375 pF 57 pF 39 VGS=0V, VDS=0V, f=1MHz µA A 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Units V TJ=55°C VSD Max 1 VDS=24V, VGS=0V IDSS IS Typ pF 3 6 Ω 6.5 8.5 nC 3.1 4 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.6A, dI/dt=100A/µs 10.2 Qrr Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs 3.5 1.2 nC Gate Drain Charge 1.6 nC Turn-On DelayTime 4.6 ns 1.9 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 20.1 ns 2.6 ns 14 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 US3406 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 10 15 10V 4.5V 8 12 6V 6 ID(A) 9 ID (A) VDS=5V 4V 3.5V 6 4 125°C VGS=3V 3 2 0 25°C 0 0 1 2 3 4 1.5 5 2 100 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 90 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 80 70 60 50 VGS=10V 40 ID=3.6A 1.6 VGS=4.5V VGS=10V 1.4 1.2 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 ID=3.6A 1.0E+00 125° 150 100 IS (A) RDS(ON) (mΩ) 1.0E-01 125°C 1.0E-02 25° 1.0E-03 50 25°C 1.0E-04 1.0E-05 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 1.2 US3406 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 400 10 VDS=15V ID=3.6A Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 300 200 Coss 0 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 20 25 30 TJ(Max)=150°C TA=25°C 15 10µs 100µs Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Crss 100 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000