UNISONIC TECHNOLOGIES CO., LTD UT12N10 Preliminary Power MOSFET 12 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it‘ s good at handing high power and current. FEATURES * 100V, 12A, RDS(ON) = 180mΩ @VGS = 10V. * Be good at handing high power and current. * Very high dense cell design for super low RDS(ON). * Lead free product is acquired. SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT12N10L-TN3-R UT12N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-508.b UT12N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 100 V VGSS ±20 V Continuous ID 12 A Drain Current Pulsed (Note 1) IDM 44 A Power Dissipation PD 43 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Note:1 Repetitive Rating: Pulse width limited by maximum junction temperature THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 2) θJA 50 °C/W Junction to Case θJC 3.5 °C/W Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user’s board design. Note:2 When mounted on a 1 in2 pad of 2 oz copper UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-508.b UT12N10 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A Forward Transconductance gFS VDS=10V, ID=6A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge QG VGS=10V, VDS=80V, ID=12A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=80V, ID=12A, VGS=10V, Rise Time tR RG=9.1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V (Note 1) Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 V 1 µA +100 nA -100 nA 2 150 5 4 180 430 90 20 8 1.5 2 12 7 18 3 V mΩ S pF pF pF 16 24 14 35 6 nC nC nC ns ns ns ns 12 A 1.2 V 3 of 4 QW-R502-508.b UT12N10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS VDD td(on) tr RL RGEN VIN ton D VOUT VOUT toff td(off) tf 90% 90% 10% Inverted 10% 90% G S Switching Test Circuit VIN10% 50% 50% Pulse Width Switching Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-508.b