UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 20mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UT20N03L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT20N03-TN3-R UT20N03L-TN3-R UT20N03-TN3-T UT20N03L-TN3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 5 QW-R502-139.B UT20N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulsed (Note 2) Repetitive (Note 1) Avalanche Energy Peak Diode Recovery (Note 3) Power Dissipation SYMBOL VDSS VGSS ID IDM EAS EAR dv/dt RATINGS 30 ±20 20 120 15 6 6 PD 60 UNIT V V A mJ KV/µs W ℃ ℃ Junction Temperature TJ +175 Storage Temperature TSTG -55 ~ +175 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP 1.7 MAX 100 2.5 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250µA VDS =30V,VGS =0V VDS =0 V, VGS = ±20V 30 VGS(TH) VDS =VGS, ID =25 µA VGS=4.5V, ID =15A VGS=10V, ID =15A 1.2 CISS COSS CRSS VDS =25 V, VGS =0V, f=1MHz SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VGS=10V,VDD=15V, RG=12.7Ω, ID=15A Turn-Off Delay Time tD(OFF) Turn-Off Fall-Time tF Gate-Source Charge QGS VDD=15V,ID=15A Gate-Drain Charge QGD Gate Charge Total QG VDD=15V,ID=15A, VGS=0~5V SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V,IF=30A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VR=15V,IF=IS, dIF/dt=100A/µs Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. ID = 15A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. IS=30A, VDS=24V, di/dt=200A/μs, TJ(MAX)=175℃ 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 1.6 22.9 15.5 2 31 20 530 200 60 700 275 90 6.2 11 23 18 2.5 6.4 8.4 9.3 17 24 27 3.1 9.6 11 1.1 1.4 V µA nA V mΩ pF ns nC V 30 A 120 15 2 18 3 ns nC 2 of 4 QW-R502-139.B UT20N03 TYPICAL CHARACTERISTICS ZthJC (K/W) RDS(ON) (mΩ) Continuous Drain Current, ID (A) R D S( O N )= V D S/ ID Continuous Drain Current, ID (A) Power MOSFET Gate Charge 16 14 VGS=f(QGate) ID=15A Pulse 12 0.2 VDS max 10 0.5 VDS max 8 0.8 VDS max 6 ID=f(VGS) VDS≥2×ID×RDS(ON)max tp=80μs 50 45 40 35 30 25 20 15 10 4 2 0 Transfer Characteristics 60 55 0 2 4 6 8 10 12 14 16 18 20 21 Gate Charge, QG (nC) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 0 0 2 4 1 3 Gate-Source Voltage, VGS (V) 5 5.5 3 of 4 QW-R502-139.B UT20N03 TYPICAL CHARACTERISTICS(Cont.) IF (A) C (pF) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-139.B