UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V (G-S) MOSFET DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate rating. FEATURES * VDS(V)= -20V * ID=-4.5A *RDS(ON) < 100mΩ @VGS = -2.5V, RDS(ON) < 65mΩ @VGS = -4.5V SYMBOL S (4) G (3) D (1, 2, 5, 6) ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3443L-AG6-R UT3443G-AG6-R Note: Pin Assignment: G: Gate D: Drain Package SOT-26 S: Source Pin Assignment 1, 2, 5, 6 3 4 D G S Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-557.a UT3443 Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-557.a UT3443 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER RATINGS UNIT Drain-Source Voltage -20 V Gate-Source Voltage ±12 V Continuous TA=25°C -4.5 ID TJ =150°C (Note 2) A Drain Current TA=70°C -3.6 -20 Pulsed IDM Power Dissipation (Note 2) TA=25°C PD 1.1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 1) Note: 1. Surface Mounted on FR4 Board, t≤5 sec SYMBOL θJA RATINGS 110 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS SYMBOL Drain-Source Leakage Current Gate- Source Leakage Current IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 2) IGSS VGS(TH) RDS(ON) TEST CONDITIONS www.unisonic.com.tw TYP VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TC=70°C VGS=+12V, VDS=0V VGS=-12V, VDS=0V VDS=VGS, ID=-250µA VGS=-4.5V, ID=-4.5A VGS=-2.7V, ID=-3.8A VGS=-2.5V, ID=-3.7A SWITCHING PARAMETERS (Note 3) Total Gate Charge QG VGS=-4.5V, VDS=-10V, ID=-4.5A Gate to Source Charge QGS Gate to Drain Charge QGD Gate Resistance Rg Turn-ON Delay Time tD(ON) Rise Time tR VDD=-10V, ID≈-1.0A, V Turn-OFF Delay Time tD(OFF) GEN=-4.5V, RL=10Ω, RG=6Ω Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-1.7A, VGS=0V (Note 2) Body Diode Reverse Recovery Time tRR IF=-1.7A, di/dt=100A/µs Notes: 2. Pulse test; pulse width ≤300μs, duty cycle ≤2%. 3. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD MIN MAX UNIT -1 -5 +100 -100 -0.6 -1.4 0.050 0.065 0.070 0.090 0.080 0.100 7.3 2.0 1.9 nA nA V Ω 15 32 50 45 15 50 60 100 80 nC nC nC Ω ns ns ns ns -0.8 -1.2 V 35 80 ns 3 15 µA 3 of 4 QW-R502-557.a UT3443 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-557.a