UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(on) =142mΩ @VGS = 10 V,ID=6.4A * High Switching Speed * Low CRSS (Typically 20pF) * Low Gate Charge(Typically 12nC) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT10N10L-TN3-R UTT10N10G-TN3-R UTT10N10L-TN3-T UTT10N10G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 3 QW-R502-714.a UTT10N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±25 V 10 A Continuous ID Drain Current Pulsed IDM 40 A Avalanche Current IAR 12.8 A 95 mJ Single Pulsed EAS Avalanche Energy Repetitive EAR 6.5 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 54 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.31 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V Forward VGS=+25V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.4A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge QGS VDS=80V, VGS=10V, ID=10A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=10A, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=10A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 1 +100 -100 V µA nA nA 4.0 180 V mΩ 345 1300 100 20 pF pF pF 12 2.5 5.1 5 55 20 25 60 nC nC nC ns ns ns ns 10 40 1.5 A A V 2.0 142 110 120 2 of 3 QW-R502-714.a UTT10N10 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-714.a