UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P10 Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * VDS=-100V * ID =-50A * RDS(ON)=0.023Ω @ VGS=-10V, ID=-20A * High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT50P10L-TA3-T UTT50P10G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 2 QW-R502-607.a UTT50P10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Gate-Source Voltage SYMBOL RATINGS UNIT VGSS ±20 V Continuous ID -50 A Drain Current Pulsed IDM -90 A Power Dissipation PD 225 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL θJC RATINGS 0.55 UNIT °C/W ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Forward Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS TEST CONDITIONS MIN TYP ID=-250µA, VGS=0V -100 VDS=0.8×Max.rating, VGS=0V, TJ=25°C VDS=0.8×Max.rating, VGS=0V, TJ=125°C VGS=+20V VGS=-20V VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-20A RDS(ON) VGS=-4.5V, ID=-15A gFS VDS=-15V, ID=-20A Forward Transconductance DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=-50V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=-50V, VGS=-10V, ID=-50A, RG=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS IF=-20A, VGS=0V, Pulse test, t≤300μs, Drain-Source Diode Forward Voltage VSD duty cycle d≤2% TJ=25°C, IF=-20A, VR=-50V, Body Diode Reverse Recovery Time tRR di/dt=-100A/µs -1 MAX UNIT V -1 -500 +100 -100 µA nA nA -3 V 0.019 0.023 Ω 0.021 0.025 80 S(1/Ω) 11100 700 1700 pF pF pF 20 510 145 870 30 855 220 1300 ns ns ns ns -1.0 -1.5 V 80 120 ns UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R502-607.a