New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses TO-262AA • High efficiency operation K • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 3 1 V20120C 1 2 3 • Halogen-free according to IEC 61249-2-21 definition VI20120C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A 0.64 V TJ max. 150 °C Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89159 Revision: 23-Mar-11 VI20120C 120 UNIT V 20 per device Maximum average forward rectified current (fig. 1) V20120C IF(AV) A 10 IFSM 120 A dV/dt 10 000 V/μs TJ, TSTG - 40 to + 150 °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V20120C, VI20120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A TA = 25 °C IF = 10 A Instantaneous forward voltage per diode SYMBOL VF (1) IF = 5 A TA = 125 °C IF = 10 A TA = 25 °C VR = 90 V TA = 125 °C Reverse current per diode TA = 25 °C VR = 120 V IR (2) TA = 125 °C TYP. MAX. UNIT 0.62 - 0.81 0.90 0.54 - 0.64 0.72 8 - μA 6 - mA - 700 μA 14 45 mA VI20120C UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode RθJC V20120C 2.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V20120C-M3/4W TO-262AA VI20120C-M3/4W UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.88 4W 50/tube Tube 1.45 4W 50/tube Tube TO-220AB V20120CHM3/4W (1) 1.88 4W 50/tube Tube TO-262AA VI20120CHM3/4W (1) 1.45 4W 50/tube Tube Note (1) AEC-Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89159 [email protected], [email protected], [email protected] Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V20120C, VI20120C Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 25 20 15 10 5 Mounted on Specific Heatsink 0 25 50 75 100 125 150 TA = 100 °C 0.1 TA = 25 °C 0.01 175 10 20 30 40 50 60 70 80 90 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 10 10 000 D = 0.5 8 D = 0.3 6 D = 0.2 D = 1.0 D = 0.1 4 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 Junction Capacitance (pF) Average Power Loss (W) TA = 125 °C 1 0.001 0 T 2 D = tp/T tp 8 10 1000 100 10 0 0 2 4 6 12 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) TA = 150 °C 10 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Document Number: 89159 Revision: 23-Mar-11 Junction to Case 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V20120C, VI20120C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 30° (TYP.) (REF.) 0.250 (6.35) MIN. 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.510 (12.95) 0.470 (11.94) 0.350 (8.89) 0.330 (8.38) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) www.vishay.com 4 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) For technical questions within your region, please contact one of the following: Document Number: 89159 [email protected], [email protected], [email protected] Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1