VLM.33.. Vishay Semiconductors Power SMD LED PLCC-2 FEATURES 19225 DESCRIPTION The VLM.33.. series is an advanced modification of the Vishay VLM.33.. series. It is designed to incorporate larger chips, therefore, capable of withstanding a 50 mA drive current. The package of the VLM.33.. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Product series: SMD Power • Package: PLCC-2 • Angle of half intensity: ± 60° • Utilizing (AS) AlInGaP technology • Available in 8 mm tape • Luminous intensity and color categorized e3 per packing unit • Luminous intensity ratio per packing unit IVmax/IVmin ≤ 1.6 • Thermal resistance R = 400 K/W • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Lead (Pb)-free device • Preconditioning: acc. to JEDEC Level 2a • Compatible with Reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Automotive qualified AEC-Q101 APPLICATIONS • Traffic signals and signs • Interior and exterior lighting • Dashboard illumination • Indicator and backlighting purposes for audio, video, LCDs switches, symbols, illuminated advertising etc PARTS TABLE PART COLOR, LUMINOUS INTENSITY TECHNOLOGY VLMR33T1U2-GS08 Amber, IV = (280 to 710) mcd AlInGaP on GaAs VLMR33T1U2-GS18 Amber, IV = (280 to 710) mcd AlInGaP on GaAs VLMR33R2U2-GS08 Amber, IV = (140 to 710) mcd AlInGaP on GaAs VLMR33R2U2-GS18 Amber, IV = (140 to 710) mcd AlInGaP on GaAs VLMS33S1T2-GS08 Super red, IV = (180 to 450) mcd AlInGaP on GaAs VLMS33S1T2-GS18 Super red, IV = (180 to 450) mcd AlInGaP on GaAs VLMS33S1U1-GS08 Super red, IV = (180 to 560) mcd AlInGaP on GaAs VLMS33S1U1-GS18 Super red, IV = (180 to 560) mcd AlInGaP on GaAs VLMO33S1T2-GS08 Soft orange, IV = (180 to 450) mcd AlInGaP on GaAs VLMO33S1T2-GS18 Soft orange, IV = (180 to 450) mcd AlInGaP on GaAs VLMO33T1U2-GS08 Soft orange, IV = (280 to 710) mcd AlInGaP on GaAs VLMO33T1U2-GS18 Soft orange, IV = (280 to 710) mcd AlInGaP on GaAs VLMO33R2U2-GS08 Soft orange, IV = (140 to 710) mcd AlInGaP on GaAs Document Number 81336 Rev. 1.0, 04-May-07 www.vishay.com 1 VLM.33.. Vishay Semiconductors PARTS TABLE PART COLOR, LUMINOUS INTENSITY VLMO33R2U2-GS18 Soft orange, IV = (140 to 710) mcd TECHNOLOGY AlInGaP on GaAs VLMY33T1U2-GS08 Yellow, IV = (280 to 710) mcd AlInGaP on GaAs VLMY33T1U2-GS18 Yellow, IV = (280 to 710) mcd AlInGaP on GaAs VLMY33R2U2-GS08 Yellow, IV = (140 to 710) mcd AlInGaP on GaAs VLMY33R2U2-GS18 Yellow, IV = (140 to 710) mcd AlInGaP on GaAs ABSOLUTE MAXIMUM RATINGS1) VLM.33.. PARAMETER TEST CONDITION SYMBOL VALUE VR 5 V IF 50 mA Power dissipation PV 130 mW Junction temperature Tj 125 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C RthJA 400 K/W Reverse voltage2) DC Forward current Tamb ≤ 73 °C (400 K/W) Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) UNIT Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for a short term application OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMR33.., AMBER PARAMETER TEST CONDITION Luminous intensity IF = 30 mA Luminous flux/Luminous intensity PART SYMBOL MIN MAX UNIT VLMR33T1U2 IV 280 710 mcd VLMR33R2U2 IV 140 710 mcd φV/IV TYP. 3 mlm/mcd Dominant wavelength IF = 30 mA λd Peak wavelength IF = 30 mA λp 624 nm Spectral bandwidth at 50 % Irel max IF = 30 mA Δλ 18 nm Angle of half intensity IF = 30 mA ϕ Forward voltage IF = 30 mA VF Reverse current VR = 5 V IR 611 617 622 ± 60 1.7 nm deg 2.0 2.5 V 0.01 10 µA Note: 1) Tamb = 25 °C, unless otherwise specified www.vishay.com 2 Document Number 81336 Rev. 1.0, 04-May-07 VLM.33.. Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMS33.., SUPER RED PARAMETER TEST CONDITION IF = 30 mA Luminous intensity PART SYMBOL MIN MAX UNIT VLMS33S1T2 IV 180 450 mcd VLMS33S1U1 IV 180 560 mcd Luminous flux/Luminous intensity φV/IV TYP. 3 mlm/mcd Dominant wavelength IF = 30 mA λd Peak wavelength IF = 30 mA λp 641 nm Spectral bandwidth at 50 % Irel max IF = 30 mA Δλ 17 nm Angle of half intensity IF = 30 mA ϕ Forward voltage IF = 30 mA VF Reverse current VR = 5 V IR 626 630 638 ± 60 1.7 nm deg 2.0 2.5 V 0.01 10 µA MAX UNIT Note: 1) Tamb = 25 °C, unless otherwise specified OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMO33.., SOFT ORANGE PARAMETER TEST CONDITION IF = 30 mA Luminous intensity PART SYMBOL MIN VLMO33S1T2 IV 180 450 mcd VLMO33T1U2 IV 280 710 mcd VLMO33R2U2 IV 140 710 mcd Luminous flux/Luminous intensity φV/IV TYP. 3 mlm/mcd Dominant wavelength IF = 30 mA λd Peak wavelength IF = 30 mA λp 611 nm Spectral bandwidth at 50 % Irel max IF = 30 mA Δλ 17 nm Angle of half intensity IF = 30 mA ϕ Forward voltage IF = 30 mA VF Reverse current VR = 5 V IR 600 605 611 ± 60 1.7 nm deg 2.0 2.5 V 0.01 10 µA TYP. MAX UNIT 710 mcd Note: Tamb = 25 °C, unless otherwise specified 1) OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMY33.., YELLOW PARAMETER TEST CONDITION Luminous intensity IF = 30 mA PART SYMBOL MIN VLMY33T1U2 IV 280 IV 140 VLMY33R2U2 φV/IV Luminous flux/Luminous intensity 710 3 mcd mlm/mcd Dominant wavelength IF = 30 mA λd Peak wavelength IF = 30 mA λp 590 nm Spectral bandwidth at 50 % Irel max IF = 30 mA Δλ 18 nm Angle of half intensity IF = 30 mA ϕ ± 60 deg Forward voltage IF = 30 mA VF Reverse current VR = 5 V IR 583 1.7 588 594 nm 2.0 2.5 V 0.01 10 µA Note: Tamb = 25 °C, unless otherwise specified 1) Document Number 81336 Rev. 1.0, 04-May-07 www.vishay.com 3 VLM.33.. Vishay Semiconductors COLOR CLASSIFICATION DOMINANT WAVELENGTH (NM) GROUP AMBER SOFT ORANGE YELLOW MIN MAX MIN MAX MIN MAX 1 611 618 598 601 581 584 2 614 622 600 603 583 586 3 602 605 585 588 4 604 607 587 590 5 606 609 589 592 6 608 611 591 594 Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm. LUMINOUS INTENSITY CLASSIFICATION GROUP STANDARD P Q R S T U LUMINOUS INTENSITY (MCD) CROSSING TABLE VISHAY OSRAM OPTIONAL MIN MAX VLMS33S1T2 LST67B-S1T2 1 2 1 2 1 2 1 2 1 2 1 2 45 56 71 90 112 140 180 224 280 355 450 560 56 71 90 112 140 180 224 280 355 450 560 710 VLMS33S1U1 LST67B-T1U1 Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type Numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable. www.vishay.com 4 Document Number 81336 Rev. 1.0, 04-May-07 VLM.33.. Vishay Semiconductors 100 100 90 90 80 80 IF - Forward Current (mA) IF - Forward Current (mA) TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 70 RthJA = 400 K/W 60 50 40 30 20 70 60 50 40 30 20 10 10 0 10 25 50 75 100 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 125 Tamb - Ambient Temperature (°C) 16784 Figure 4. Forward Current vs. Forward Voltage 0.12 IV rel - Relative Luminous Intensity 1.2 0.10 IF - Forward Current (A) VF - Forward Voltage (V) 20144 Figure 1. Forward Current vs. Ambient Temperature 0.08 tP/T = 0.005 0.05 0.5 0.06 0.04 0.02 0.00 10 -5 amber 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 -4 10 -3 10 -2 10 -1 10 0 101 10 2 tP - Pulse Length (s) 17044 570 580 590 600 610 620 630 640 650 660 670 0° 10° λ - Wavelength (nm) 20196 Figure 2. Forward Current vs. Pulse Length Figure 5. Relative Intensity vs. Wavelength 20° 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° IV rel - Relative Luminous Intensity 30° IV rel - Relative Luminous Intensity yellow soft orange amber super red super red amber yellow soft orange 1 0.1 0.01 95 10319 0.6 0.4 0.2 0 0.2 0.4 1 0.6 20143 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Document Number 81336 Rev. 1.0, 04-May-07 10 100 IF - Forward Current (mA) Figure 6. Relative Luminous Intensity vs. Forward Current www.vishay.com 5 VLM.33.. Vishay Semiconductors 1.2 1.1 super red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 IV rel - Relative Luminous Intensity 2.5 IV rel -Relative Luminous Intensity amber 2.0 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) 20197 - Change of Dom. Wavelength (nm) Figure 7. Relative Luminous Intensity vs. Amb. Temperature 2.5 IV rel - Relative Luminous Intensity amber 4 2 0 -2 d -4 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 20199 Figure 8. Change of Dominant Wavelength vs. Ambient Temperature 250 200 50 mA 150 amber 100 30 mA 0 - 50 10 mA - 100 - 150 - 200 - 50 20200 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Figure 9. Change of Forward Voltage vs. Ambient Temperature www.vishay.com 6 super red 2.0 1.5 1.0 0.5 0.0 - 50 100 20201 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 Figure 11. Relative Luminous Intensity vs. Amb. Temperature Δ λ d - Change of Dom. Wavelength (nm) -6 - 50 VF - Change of Forward Voltage (mV) Figure 10. Relative Intensity vs. Wavelength 6 50 λ - Wavelength (nm) 20198 1.5 super red 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5 20202 10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA) Figure 12. Change of Dominant Wavelength vs. Forward Current Document Number 81336 Rev. 1.0, 04-May-07 VLM.33.. Vishay Semiconductors 2.5 Δ λ d - Change of Dom. Wavelength (nm) 3 2 1 0 -1 -2 -3 -4 -5 - 50 - 25 0 25 50 75 50 mA 50 0 10 mA - 50 - 100 - 150 - 200 - 50 17039 0.0 - 50 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Figure 16. Relative Luminous Intensity vs. Amb. Temperature - 25 0 25 50 75 6 soft orange 4 2 0 -2 -4 -6 - 50 100 17022 Tamb - Ambient Temperature (°C) 16314 λ - Wavelength (nm) Figure 15. Relative Intensity vs. Wavelength Document Number 81336 Rev. 1.0, 04-May-07 VF - Change of Forward Voltage (mV) 1.2 1.1 soft orange 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 560 570 580 590 600 610 620 630 640 650 660 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Figure 17. Change of Dominant Wavelength vs. Ambient Temperature Figure 14. Change of Forward Voltage vs. Ambient Temperature IV rel - Relative Luminous Itensity 0.5 - Change of Dom. Wavelength (nm) red 150 100 1.0 d VF - Change of Forward Voltage (mV) 250 30 mA 1.5 17021 Figure 13. Change of Dominant Wavelength vs. Ambient Temperature 200 2.0 100 Tamb - Ambient Temperature (°C) 20203 soft orange IV rel - Relative Luminous Intensity super red 250 50 mA 200 30 mA 150 100 soft orange 50 0 10 mA - 50 - 100 - 150 - 200 - 50 17020 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 Figure 18. Change of Forward Voltage vs. Ambient Temperature www.vishay.com 7 VLM.33.. - Change of Dom. Wavelength (nm) 1.2 1.1 yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 VF - Change of Forward Voltage (mV) IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 17016 0 25 50 75 Tamb - Ambient Temperature (°C) 0 -2 -4 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 Figure 21. Change of Dominant Wavelength vs. Ambient Temperature 2.5 - 25 2 17017 Figure 19. Relative Intensity vs. Wavelength 0.0 - 50 yellow 4 -6 - 50 λ - Wavelength (nm) 16008 6 d IV rel - Relative Luminous Intensity Vishay Semiconductors 250 30 mA 200 50 mA 150 100 50 10 mA 0 - 50 - 100 - 150 - 200 - 50 100 17015 Figure 20. Relative Luminous Intensity vs. Amb. Temperature yellow - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100 Figure 22. Change of Forward Voltage vs. Ambient Temperature PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 1.2 4 2.6 (2.8) area covered with solder resist 4 1.6 (1.9) 20541_1 www.vishay.com 8 Document Number 81336 Rev. 1.0, 04-May-07 VLM.33.. Vishay Semiconductors METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) 4.5 3.5 2.5 1.5 Adhesive Tape 10.0 9.0 120° 13.00 12.75 63.5 60.5 Identification Label: Vishay Type Group Tape Code Production Code Quantity Blister Tape 14.4 max. 180 178 94 8665 Figure 24. Reel dimensions - GS08 Component Cavity 94 8670 REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED TAPING OF VLM.3.. 10.4 8.4 120° 2.2 2.0 3.5 3.1 2.5 1.5 5.75 5.25 3.6 3.4 4.5 3.5 4.0 3.6 8.3 7.7 4.1 3.9 4.1 3.9 0.25 62.5 60.0 Identification Label: Vishay Type Group Tape Code Production Code Quantity 1.85 1.65 1.6 1.4 13.00 12.75 321 329 14.4 max. 18857 2.05 1.95 94 8668 Figure 25. Reel dimensions - GS18 Figure 23. Tape dimensions in mm for PLCC-2 Document Number 81336 Rev. 1.0, 04-May-07 www.vishay.com 9 VLM.33.. Vishay Semiconductors SOLDERING PROFILE BARCODE-PRODUCT-LABEL EXAMPLE: IR Reflow Soldering Profile for lead (Pb)-free soldering Preconditioning acc. to JEDEC Level 2a 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 A 200 H max. 30 s VISHAY 150 max. 100 s max. 120 s 37 100 max. Ramp Down 6 °C/s max. Ramp Up 3 °C/s 50 B 0 0 50 100 150 Time (s) 200 250 Figure 26. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C) TTW Soldering 300 948626-1 (acc. to CECC00802) 5s Lead Temperature 250 200 second wave 235 °C...260 °C first wave full line: typical dotted line: process limits ca. 2 K/s ca. 200 K/s 150 C D E F G 20195 300 max. 2 cycles allowed 19885 Temperature (°C) 106 A) Type of component B) Manufacturing Plant C) SEL - Selection Code (Bin): e.g.: R2 = Code for Luminous Intensity Group 3 = Code for Color Group D Date Code year/week E) Day Code (e.g. 1: Monday) F) Batch No. G) Total quantity H) Company Code 100 °C...130 °C 100 ca. 5 K/s 2 K/s 50 forced cooling 0 0 50 100 150 200 250 Time (s) Figure 27. Double wave soldering of opto devices (all packages) www.vishay.com 10 Document Number 81336 Rev. 1.0, 04-May-07 VLM.33.. Vishay Semiconductors DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. L E V E L CAUTION This bag contains MOISTURE –SENSITIVE DEVICES 2a 1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260°C) must be: a) Mounted within 672 hours at factory condition of < 30°C/60%RH or b) Stored at <10% RH. Aluminum bag 3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23°C + 5°C or b) 2a or 2b is not met. Label 4. If baking is required, devices may be baked for: 192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen) or o or 96 hours at 60±5 Cand <5%RH For all device containers 24 hours at 100±5°C Not suitable for reels or tubes Reel Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113 19786 15973 Example of JESD22-A112 Level 2a label FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 672 hours under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/nitrogen) or 96 hours at 60 °C + 5 °C and < 5 % RH for all device containers or 24 hours at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2a label is included on all dry bags. Document Number 81336 Rev. 1.0, 04-May-07 ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR-CODE LABELS The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. www.vishay.com 11 VLM.33.. Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 12 Document Number 81336 Rev. 1.0, 04-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1