VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-92 TO-243AA* Die -500V 30Ω -0.2A VP2450N3 VP2450N8 VP2450ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Features Product marking for TO-243AA: ❏ Free from secondary breakdown VP4E❋ ❏ Low power drive requirement Where ❋ = 2-week alpha date code ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability Advanced DMOS Technology ❏ Integral Source-Drain diode These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits Package Options ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings D G Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* D S SGD TO-92 TO-243AA (SOT-89) -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 07/08/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP2450 Thermal Characteristics Package ID (continuous)* TO-92 -0.1A TO-243AA * † ID (pulsed) Power Dissipation @ TC = 25°C θjc θja °C/W °C/W 1W 125 15 -0.3A -0.16A -0.80A 1.6W † IDR* IDRM 170 -0.1A -0.3A 78 -0.16A -0.80A ID (continuous) is limited by max rated Tj. Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage -500 VGS(th) Gate Threshold Voltage -1.5 ∆V GS(th) Typ Max Unit Conditions V VGS = 0V, ID = -250µA -3.5 V VGS = VDS, ID = -1mA Change in VGS(th) with Temperature -4.8 mV/°C VGS = VDS, ID = -1mA IGSS Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µA VGS = 0V, VDS = Max Rating -1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = -4.5V, VDS = -15V ID(ON) ON-State Drain Current -75 -200 VGS = -10V, VDS = -15V Static Drain-to-Source ON-State Resistance 35 Ω 30 ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 75 CRSS Reverse Transfer Capacitance 20 td(ON) Turn-ON Delay Time 10 tr Rise Time 25 td(OFF) Turn-OFF Delay Time 45 tf Fall Time 25 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 150 320 VGS = -4.5V, ID = -50mA VGS = -10V, ID = -100mA %/°C m Ω RDS(ON) VGS = -10V, ID = -100mA VDS = -15V, ID = -100mA 190 pF VGS = 0V, VDS =- 25V f = 1 MHz ns VDD = -25V ID = -200mA RGEN = 25Ω V VGS = 0V, ISD = -100mA ns VGS = 0V, ISD = -100mA -1.8 300 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 VP2450 Typical Performance Curves Output Characteristics -1.0 Saturation Characteristics -0.6 VGS=-10V VGS = -6.0V VGS=-4.5V -0.5 VGS=-6.0V -0.6 ID (Amperes) ID (Amperes) -0.8 VGS = -10V VGS=-3.5V -0.4 VGS = -4.5V -0.3 VGS = -3.5V -0.4 -0.2 -0.2 -0.1 0.0 0.0 0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 1.0 2.0 V DS =-20V TO-243AA T 0.6 A T T A 1.5 =-55¡C A PD (Watts) GFS (Siemens) 0.8 =25¡C =125¡C 1.0 TO-92 0.4 0.5 0.2 0.0 0.0 0 -100 -200 -300 -400 -500 0 25 50 ID (Milliamperes) Maximum Rated Safe Operating Area 100 125 150 Thermal Response Characteristics 1.0 -1.0 Thermal Resistance (normalized) TO-243AA (pulsed) TO-92 (pulsed) TO-243AA (DC) ID (amperes) 75 TA (¡C) -0.1 TO-92 (DC) -0.01 0.8 TO-243AA ° TA = 2 5 C 0.6 PD = 1 . 6 W 0.4 0.2 TO-92 PD = 1W T A ° TC = 25 C =25¡C -0.001 0 -1 -10 -100 -1000 0.001 VDS (Volts) 0.01 0.1 tp (seconds) 3 1 10 VP2450 Typical Performance Curves !" # ! $% 4& &!! ) +! % 4& !,-( &' 0 & &' 0 & +. °$ &' !( &!! )* +! % +!/ $!!" " & 0 & + 0 °$ &' !,-( + 0 °$ &+1 2 !,-( + 0 °$ 2 &3 +. °$ &' &, '! # 7!" $!!" " $!!" !" # ! %" &, !5 0 / 0 61- &0& &0& &' #, $ "/!!( $ $ $ 8' !"%,9 & #, 07/08/02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com