VS-150EBU04 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • Designed and JEDEC-JESD47 Anode qualified according to • Compliant to RoHS Directive 2002/95/EC • PowerTab® package PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRODUCT SUMMARY • Reduced parts count Package PowerTab® IF(AV) 150 A VR 400 V VF at IF 1.3 V trr (typ.) See recovery table TJ max. 175 °C Diode variation Single die DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 400 V VR Continuous forward current IF(AV) TC = 104 °C 150 Single pulse forward current IFSM TC = 25 °C 1500 Maximum repetitive forward current IFRM Square wave, 20 kHz 300 Operating junction and storage temperatures TJ, TStg A - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 400 - - IF = 150 A - 1.07 1.3 IF = 150 A, TJ = 175 °C - 0.9 1.1 IF = 150 A, TJ = 125 °C - 0.96 1.17 VR = VR rated - - 50 μA IR = 200 μA UNITS V Reverse leakage current IR TJ = 150 °C, VR = VR rated - - 4 mA Junction capacitance CT VR = 400 V - 100 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 16-Jun-11 Document Number: 93003 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - - 60 TJ = 25 °C - 93 - TJ = 125 °C - 172 - - 11 - - 20 - IF = 150 A VR = 200 V dIF/dt = 200 A/μs TJ = 25 °C TJ = 125 °C UNITS ns A TJ = 25 °C - 490 - TJ = 125 °C - 1740 - MIN. TYP. MAX. - - 0.35 - 0.2 - - - 5.02 - 0.18 - oz. - 2.4 (20) N·m (lbf · in) nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, junction to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth and greased Weight 1.2 (10) Mounting torque Marking device Revision: 16-Jun-11 UNITS Case style PowerTab® g 150EBU04 Document Number: 93003 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors 1000 Reverse Current - I R (µA) T J = 175˚C 100 125˚C 10 1 25˚C 0.1 0.01 100 0.001 0 T = 175˚C J 100 200 300 400 Reverse Voltage - VR (V) T = 125˚C J Fig. 1 - Typical Values of Reverse Current vs. Reverse Voltage T = 25˚C J 10000 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 1000 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 T J = 25˚C 1000 100 10 10 1.8 Forward Voltage Drop - VFM (V) 100 1000 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 1 D = 0.50 0.1 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (Seconds) Fig. 2 - Maximum Thermal Impedance ZthJC Characteristics Revision: 16-Jun-11 Document Number: 93003 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors 250 160 Vr = 200V Tj = 125˚C Tj = 25˚C IF = 150A IF = 75A 200 140 DC 120 trr ( ns ) Allowable Case Temperature (°C) 180 100 Square wave (D = 0.50) 80 Rated Vr applied 60 150 100 see note (1) 40 0 50 100 150 200 250 Average Forward Current - IF(AV) (A) 50 100 1000 di F /dt (A/µs ) Fig. 4 - Typical Reverse Recovery Time vs. dIF/dt Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current 5000 4500 4000 250 3500 RMS Limit 200 150 Qrr ( nC ) Average Power Loss ( Watts ) 300 D = 0.01 D = 0.02 D = 0.05 D = 0.10 DDC = 0.20 D = 0.50 DC 100 50 0 0 50 100 150 200 3000 Vr = 200V Tj = 125˚C Tj = 25˚C IF = 150A IF = 75A 2500 2000 1500 1000 250 Average Forward Current - IF(AV) (A) 500 0 100 1000 di F /dt (A/µs ) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 16-Jun-11 Document Number: 93003 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 16-Jun-11 Document Number: 93003 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 150 E B U 04 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (150 = 150 A) 3 - Single diode 4 - PowerTab® (ultrafast/hyperfast only) 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 Application note www.vishay.com/doc?95179 Revision: 16-Jun-11 Document Number: 93003 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 1.35 (0.05) 1.20 (0.04) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) Lead 2 3.09 (0.12) 3.00 (0.11) 5.45 REF. (0.21 REF.) 0.60 (0.02) 0.40 (0.01) 39.8 (1.56) 39.6 (1.55) 12.10 (0.47) 12.40 (0.48) Lead 1 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 18.25 (0.71) 18.00 (0.70) 4.20 (0.16) 4.00 (0.15) 8.45 (0.33) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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