VTP Process Photodiodes VTP8440 PACKAGE DIMENSIONS inch (mm) CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP8440 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 50 V RSH Shunt Resistance H = 0, V = 10 mV TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 15 V Re Responsivity 940 nm SR Sensitivity @ Peak 30 Typ. 55 µA .20 %/°C 15 .5 nA GΩ 15 pF A/(W/cm2) .025 .55 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±50 Degrees NEP Noise Equivalent Power 1.3 x 10 -13 (Typ.) W ⁄ Hz Specific Detectivity 1.8 x 10 12 (Typ.) cm Hz / W D* 400 50 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1150 nm 925 nm 140 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 62