VUO 80 IdAVM = 82 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 80-08NO1 VUO 80-12NO1 VUO 80-14NO1 VUO 80-16NO1 VUO 80-18NO1 Symbol Test Conditions IdAV IdAVM TK = 90°C, module module IFSM TVJ = 45°C; VR = 0 4 5 1/2 Type 12 10 8 6 8 4/5 10 6 Maximum Ratings Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop Leads suitable for PC board soldering UL registered E72873 ● 82 82 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 640 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 520 555 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1720 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1295 A2s A2s -40...+150 150 -40...+130 °C °C °C 3000 3600 V~ V~ ● ● ● ● ● VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32UNF) Weight typ. Symbol Test Conditions IR VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM £ £ 0.3 6 mA mA VF IF TVJ = 25°C £ 1.5 V VT0 rT For power-loss calculations only 0.8 7.5 V mW RthJH per diode, 120° rect. per module, 120° rect. 1.42 0.24 K/W K/W dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 2 - 2.5 18-22 35 Nm lb.in. g ● ● Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ● ● TVJ TVJM Tstg = 80 A; Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors 934 I2t ● 1-2 VUO 80 104 500 80 50Hz, 80% VRRM A 70 2 As A 400 IFSM IF 60 50 VR = 0 V I2t TVJ = 45°C 300 TVJ = 45°C 103 40 TVJ = 150°C 200 TVJ=150°C TVJ= 25°C 30 TVJ = 150°C 20 100 10 0 0.0 0.5 1.0 1.5 102 0 0.001 V 2.0 0.01 0.1 VF 1 s 1 2 3 t Fig. 1 Forward current versus voltage drop per diode 4 5 6 78 ms910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 200 100 A W RthHA : 80 0.5 K/W 1.0 K/W 1.5K/W 2.0 K/W 3.0 K/W 4.0 K/W 6.0 K/W 150 Ptot 100 Id(AV)M 60 40 50 20 0 0 0 10 20 30 40 50 60 70 Id(AV)M 80 A 0 20 40 60 80 100 120 140 °C 0 Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature 20 40 60 80 100 120 140 °C TH Fig. 5 Max. forward current versus heatsink temperature 1.6 K/W 1.4 ZthJH 1.2 1.0 0.8 Constants for ZthJH calculation: 0.6 i 0.4 0.2 0.0 0.001 VUO 80 0.01 0.1 Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 1 s 1 2 3 4 Rthi (K/W) ti (s) 0.005 0.21 0.795 0.41 0.01 0.05 0.14 0.5 10 t 2-2