VBO 13 IdAV = 18 A VRRM = 800-1600 V Single Phase Rectifier Bridge Standard and Avalanche Types VRSM VBRmin① VRRM V 900 1300 1500 1700 V V 800 1200 1400 1600 1230 1430 1630 Standard Avalanche Types Types VBO 13-08NO2 VBO 13-12NO2 VBO 13-14NO2 VBO 13-16NO2 VBO 13-12AO2 VBO 13-14AO2 VBO 13-16AO2 + ~ – ~ ~ + – ~ ① For Avalanche Types only Symbol Conditions IdAV ② IdAVM PRSM TC = 85°C, module module TVJ = TVJM t = 10 µs 18 30 2.5 A A kW IFSM TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 220 230 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 180 190 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 240 220 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 160 150 A2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ • Easy to mount with one screw • Space and weight savings • Improved temperature and power cycling 1.5-2 13-18 15 Nm lb.in. g Dimensions in mm (1 mm = 0.0394") I2t Maximum Ratings TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Weight Mounting torque (M5) (10-32 UNF) typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM ≤ ≤ VF IF TVJ = 25°C ≤ VT0 rT For power-loss calculations only TVJ = TVJM RthJC RthJK dS dA a = 55 A; t = 1 min t=1s Features • Avalanche rated parts available • Package with DCB ceramic base plate • Isolation voltage 3600 V~ • Planar passivated chips • Low forward voltage drop • ¼" fast-on terminals • UL registered E 72873 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages Characteristic Values 0.3 5 mA mA 1.8 V 0.85 17 V mΩ per diode; DC current per module per diode, DC current per module 5.6 1.4 6.0 1.5 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air ③ Max. allowable acceleration 13 9.5 50 mm mm m/s2 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 420 Data according to IEC 60747 and refer to a single diode unless otherwise stated ② for resistive load at bridge output, ③ with isolated fast-on tabs. 1-2 VBO 13 Fig. 1 Surge overload current per diode IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per diode Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Rthi (K/W) ti (s) 0.059 2.714 3.227 0.00217 0.159 2.34 IXYS reserves the right to change limits, test conditions and dimensions. 2-2 420 Fig. 5 Transient thermal impedance junction to heatsink per diode © 2004 IXYS All rights reserved