W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture DDR200, DDR266 and DDR333: The W3EG72126S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eighteen 128Mx4 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin FR4 substrate. • JEDEC design specifications Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input. Auto and self refresh Serial presence detect Power supply: VCC = 2.5V ± 0.20V JEDEC standard 184 pin DIMM package Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. * This product is under development, is not qualified or characterized and is subject to change without notice. • Package height options: JD3: 30.48mm (1.20") and AJD3: 28.70mm (1.13") • Consult factory for availability of lead-free products. OPERATING FREQUENCIES DDR333 @CL=2.5 DDR266 @CL=2 DDR266 @CL=2 DDR266 @CL=2.5 DDR200 @CL=2 Clock Speed 166MHz 133MHz 133MHz 133MHz 100MHz CL-tRCD-tRP 2.5-3-3 2-2-2 2-3-3 2.5-3-3 2-2-2 November 2004 Rev. 3 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY PIN CONFIGURATION PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 SYMBOL VREF DQ0 VSS DQ1 DQS0 DQ2 VCC DQ3 NC RESET# VSS DQ8 DQ9 DQS1 VCCQ NC NC VSS DQ10 DQ11 CKE0 VCCQ DQ16 DQ17 DQS2 VSS A9 DQ18 A7 VCCQ DQ19 A5 DQ24 VSS DQ25 DQS3 A4 VCC DQ26 DQ27 A2 VSS A1 CB0 CB1 VCC November 2004 Rev. 3 PIN 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 SYMBOL DQS8 A0 CB2 VSS CB3 BA1 DQ32 VCCQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 VCCQ WE# DQ41 CAS# VSS DQS5 DQ42 DQ43 VCC NC DQ48 DQ49 VSS NC NC VCCQ DQS6 DQ50 DQ51 VSS VCCID DQ56 DQ57 VCC DQS7 DQ58 DQ59 VSS NC SDA SCL PIN 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 SYMBOL VSS DQ4 DQ5 VCCQ DQS9 DQ6 DQ7 VSS NC NC NC VCCQ DQ12 DQ13 DQS10 VCC DQ14 DQ15 NC VCCQ NC DQ20 A12 VSS DQ21 A11 DQS11 VCC DQ22 A8 DQ23 VSS A6 DQ28 DQ29 VCCQ DQS12 A3 DQ30 VSS DQ31 CB4 CB5 VCCQ CK0 CK0# PIN NAMES PIN 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 A0-A12 BA0-BA1 DQ0-DQ63 CB0-CB7 DQS0-DQS17 CK0 CK0# CKE0 CS0# RAS# CAS# WE# VCC VCCQ VSS VREF VCCSPD SDA SCL SA0-SA2 VCCID NC RESET# SYMBOL VSS DQS17 A10 CB6 VCCQ CB7 VSS DQ36 DQ37 VCC DQS13 DQ38 DQ39 VSS DQ44 RAS# DQ45 VCCQ CS0# NC DQS14 VSS DQ46 DQ47 NC VCCQ DQ52 DQ53 NC VCC DQS15 DQ54 DQ55 VCCQ NC DQ60 DQ61 VSS DQS16 DQ62 DQ63 VCCQ SA0 SA1 SA2 VCCSPD 2 Address input (Multiplexed) Bank Select Address Data Input/Output Check bits Data Strobe Input/Output Clock Input Clock Input Clock Enable input Chip Select Input Row Address Strobe Column Address Strobe Write Enable Power Supply Power Supply for DQS Ground Power Supply for Reference Serial EEPROM Power Supply Serial data I/O Serial clock Address in EEPROM VCC Indentification Flag No Connect Reset Enable White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY FUNCTIONAL BLOCK DIAGRAM VSS RCS0# DQS0 DQS9 CS# DQ0 DQ1 DQ2 DQ3 DQS I/O 3 I/O 2 I/O 1 I/O 0 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DQ8 DQ9 DQ10 DQ11 CS# DQ16 DQ17 DQ18 DQ19 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DQ24 DQ25 DQ26 DQ27 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DQ32 DQ33 DQ34 DQ35 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DQ40 DQ41 DQ42 DQ43 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DQ48 DQ49 DQ50 DQ51 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DQ56 DQ57 DQ58 DQ59 DQS I/O 3 I/O 2 I/O 1 I/O 0 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# CB0 CB1 CB2 CB3 DM DQ4 DQ5 DQ6 DQ7 DQS1 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DM DQS I/O 3 I/O 2 I/O 1 I/O 0 CS# DQS10 DM DQ12 DQ13 DQ14 DQ15 DQS2 DQS11 DM DQ20 DQ21 DQ22 DQ23 DQS3 DQS12 DM DQ28 DQ29 DQ30 DQ31 DQS4 DQ36 DQ37 DQ38 DQ39 SDRAM PLL DQS13 DM CKO# REGISTER DQS14 DQS5 DM DQ44 DQ45 DQ46 DQ47 DQS6 Serial PD SCL DQ52 DQ53 DQ54 DQ55 SDA WP DQS15 DM A0 A1 A2 SA0 SA1 SA2 DQS16 DQS7 DM DQ60 DQ61 DQ62 DQ63 DQS17 DQS8 DM CS0# BA0-BA1 RAS# A0-A12 CAS# CKE0 WE# PCK PCK# CB4 CB5 CB6 CB7 R E G I S T E R RCS0# RBA0 - RBA1 RA0 - RA12 RRAS# RCAS# RCKE0 RWE# DM VCCSPD SPD VCC/VCCQ DDR SDRAMs VREF DDR SDRAMs VSS DDR SDRAMs BA0 - BA1: DDR SDRAMs A0 - A12: DDR SDRAMs RAS#: DDR SDRAMs CAS#: DDR SDRAMs CKE: DDR SDRAMs WE: DDR SDRAMs RESET# Notes: 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/S relationships must be maintained as shown. NOTE: All resistor values are 22 ohms unless otherwise specified November 2004 Rev. 3 CKO 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Voltage on any pin relative to VSS VIN, VOUT -0.5 to 3.6 V Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 to 3.6 V TSTG -55 to +150 °C Power Dissipation PD 27 W Short Circuit Current IOS 50 mA Storage Temperature Note: Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability DC CHARACTERISTICS 0°C ≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V Parameter Symbol Min Max Unit Supply Voltage VCC 2.3 2.7 V Supply Voltage VCCQ 2.3 2.7 V Reference Voltage VREF 1.15 1.35 V Termination Voltage VTT 1.15 1.35 V Input High Voltage VIH VREF + 0.15 VCCQ + 0.3 V Input Low Voltage VIL -0.3 VREF -0.15 V Output High Voltage VOH VTT + 0.76 — V Output Low Voltage VOL — VTT-0.76 V CAPACITANCE TA = 25°C. f = 1MHz, VCC = 2.5V ± 0.2V Parameter Symbol Max Unit Input Capacitance (A0-A12) CIN1 6.25 pF Input Capacitance (RAS#,CAS#,WE#) CIN2 6.25 pF Input Capacitance (CKE0) CIN3 6.25 pF Input Capacitance (CK0#,CK0) CIN4 5.5 pF Input Capacitance (CS0#) CIN5 6.25 pF Input Capacitance (DQM0-DQM8) CIN6 8 pF Input Capacitance (BA0-BA1) CIN7 6.25 pF Data input/output capacitance (DQ0-DQ63)(DQS) COUT 8 pF Data input/output capacitance (CB0-CB7) COUT 8 pF November 2004 Rev. 3 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY IDD SPECIFICATIONS AND TEST CONDITIONS 0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V Includes DDR SDRAM component only Parameter Symbol Conditions DDR333@CL=2.5 Max DDR266@CL=2, 2.5 Max DDR200@CL=2 Max Units Operating Current IDD0 One device bank; Active - Precharge; tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. 2340 2340 2340 mA Operating Current IDD1 One device bank; Active-ReadPrecharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs changing once per clock cycle. 2880 2880 2880 mA Precharge PowerDown Standby Current IDD2P All device banks idle; Power-down mode; tCK=tCK (MIN); CKE=(low) 90 90 90 rnA Idle Standby Current IDD2F CS# = High; All device banks idle; tCK=tCK (MIN); CKE = high; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. 810 810 810 mA Active Power-Down Standby Current IDD3P One device bank active; Power-Down mode; tCK (MIN); CKE=(low) 630 630 630 mA Active Standby Current IDD3N CS# = High; CKE = High; One device bank; Active-Precharge; tRC=tRAS (MAX); tCK=tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. 900 900 900 mA Operating Current IDD4R Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; TCK= TCK (MIN); lOUT = 0mA. 2970 2970 2970 mA Operating Current IDD4W Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle. 3150 2790 2790 rnA Auto Refresh Current IDD5 tRC = tRC (MIN) 5220 5220 5220 mA Self Refresh Current IDD6 CKE ≤ 0.2V Operating Current IDD7A Four bank interleaving Reads (BL=4) with auto precharge with tRC=tRC (MIN); tCK=tCK (MIN); Address and control inputs change only during Active Read or Write commands. November 2004 Rev. 3 5 90 90 90 mA 7290 7200 7200 mA White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY IDD SPECIFICATIONS AND TEST CONDITIONS 0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V Includes PLL and register power Parameter Symbol Conditions DDR333@CL=2.5 Max DDR266@CL=2, 2.5 Max DDR200@CL=2 Max Units Operating Current IDD0 One device bank; Active - Precharge; tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. 2615 2615 2615 mA Operating Current IDD1 One device bank; Active-ReadPrecharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs changing once per clock cycle. 3155 3155 3155 mA Precharge PowerDown Standby Current IDD2P All device banks idle; Power-down mode; tCK=tCK (MIN); CKE=(low) 90 90 90 rnA Idle Standby Current IDD2F CS# = High; All device banks idle; tCK=tCK (MIN); CKE = high; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. 1120 1120 1120 mA Active Power-Down Standby Current IDD3P One device bank active; Power-Down mode; tCK (MIN); CKE=(low) 630 630 630 mA Active Standby Current IDD3N CS# = High; CKE = High; One device bank; Active-Precharge; tRC=tRAS (MAX); tCK=tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. 1210 1210 1210 mA Operating Current IDD4R Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; TCK= TCK (MIN); lOUT = 0mA. 3245 3245 3245 mA Operating Current IDD4W Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK=tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle. 3425 3065 3065 rnA Auto Refresh Current IDD5 tRC = tRC (MIN) 5530 5530 5530 mA Self Refresh Current IDD6 CKE ≤ 0.2V 400 400 400 mA Operating Current IDD7A Four bank interleaving Reads (BL=4) with auto precharge with tRC=tRC (MIN); tCK=tCK (MIN); Address and control inputs change only during Active Read or Write commands. 7565 7475 7475 mA November 2004 Rev. 3 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A IDD1 : OPERATING CURRENT : ONE BANK IDD7A : OPERATING CURRENT : FOUR BANKS 1. Typical Case : VCC=2.5V, T=25°C 1. Typical Case : VCC=2.5V, T=25°C 2. Worst Case : VCC=2.7V, T=10°C 2. Worst Case : VCC=2.7V, T=10°C 3. Only one bank is accessed with tRC (min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. IOUT = 0mA 3. Four banks are being interleaved with tRC (min), Burst Mode, Address and Control inputs on NOP edge are not changing. Iout=0mA 4. Timing Patterns : 4. Timing Patterns : • DDR200 (100 MHz, CL=2) : tCK=10ns, CL2, BL=4, tRCD=2*tCK, tRAS=5*tCK Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst • DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst • DDR266 (133MHz, CL=2) : tCK=7.5ns, CL=2, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst • DDR333 (166MHz, CL=2.5) : tCK=6ns, BL=4, tRCD=10*tCK, tRAS=7*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst • DDR200 (100 MHz, CL=2) : tCK=10ns, CL2, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst • DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRRD=3*tCK, tRCD=3*tCK Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst • DDR266 (133MHz, CL=2) : tCK=7.5ns, CL2=2, BL=4, tRRD=2*tCK, tRCD=2*tCK Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst • DDR333 (166MHz, CL=2.5) : tCK=6ns, BL=4, tRRD=3*tCK, tRCD=3*tCK, Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP A (0-3) = Activate Bank 0-3 R (0-3) = Read Bank 0-3 November 2004 Rev. 3 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V AC Characteristics 335 Parameter 262 263/265 202 Symbol Min Max Min Max Min Max Min Max Units Access window of DQs from CK, CK# tAC -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 -0.75 +0.75 ns CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK 16 tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK 16 CL=2.5 tCK (2.5) 6 13 7.5 13 7.5 13 7.5 13 ns 22 CL=2 tCK (2) 7.5 13 7.5 13 7.5 13 CK low-level width Clock cycle time Notes DQ and DM input hold time relative to DQS tDH 0.45 DQ and DM input setup time relative to DQS tDS 0.45 0.5 0.5 DQ and DM input pulse width (for each input) tDIPW 1.75 1.75 1.75 Access window of DQS from CK, CK# tDQSCK -0.6 DQS input high pulse width tDQSH 0.35 DQS input low pulse width tDQSL 0.35 DQS-DQ skew, DQS to last DQ valid, per group, per access tDQSQ Write command to first DQS latching transition tDQSS 0.75 DQS falling edge to CK rising - setup time tDSS 0.2 DQS falling edge from CK rising - hold time tDSH 0.2 0.2 Half clock period tHP tCH, tCL tCH, tCL 0.5 +0.6 -0.75 0.5 +0.75 0.35 1.25 1.25 0.2 +0.7 22 14,17 0.5 ns 14,17 1.75 ns 17 -0.75 1.25 0.2 0.75 ns tCK 0.35 0.5 0.75 +0.75 0.35 0.35 0.5 0.75 +0.75 0.35 0.35 0.45 -0.75 ns ns 0.5 tCK 0.5 ns 1.25 tCK 13,14 0.2 tCK 0.2 0.2 tCK tCH, tCL tCH, tCL ns 18 Data-out high-impedance window from CK, CK# tHZ ns 8,19 Data-out low-impedance window from CK, CK# tLZ -0.7 -0.75 +0.75 -0.75 +0.75 -0.75 +0.75 ns 8,20 Address and control input hold time (fast slew rate) tIHf 0.75 0.90 0.90 0.90 ns 6 Address and control input set-up time (fast slew rate) tISf 0.75 0.90 0.90 0.90 ns 6 Address and control input hold time (slow slew rate) tIHs 0.8 1 1 1 ns 6 Address and control input setup time (slow slew rate) tISs 0.8 1 1 1 ns 6 Address and control input pulse width (for each input) tIPW 2.2 2.2 2.2 2.2 ns LOAD MODE REGISTER command cycle time tMRD 12 15 15 15 ns DQ-DQS hold, DQS to first DQ to go non-valid, per access tQH tHPtQHS tHPtQHS tHPtQHS tHPtQHS ns Data hold skew factor tQHS ACTIVE to PRECHARGE command tRAS 42 ACTIVE to READ with Auto precharge command tRAP 15 15 15 15 ns ACTIVE to ACTIVE/AUTO REFRESH command period tRC 60 60 60 60 ns AUTO REFRESH command period tRFC 72 75 75 75 ns November 2004 Rev. 3 0.55 70,000 8 0.75 40 120,000 0.75 40 120,000 40 0.75 ns 120,000 ns 13,14 15 21 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (continued) 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V AC Characteristics Parameter 335 262 Max Min 263/265 Max Min Max 202 Symbol Min Min Max Units ACTIVE to READ or WRITE delay tRCD 15 15 15 15 ns PRECHARGE command period tRP 15 15 15 15 ns DQS read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK DQS read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK ACTIVE bank a to ACTIVE bank b command tRRD 12 15 15 15 ns DQS write preamble tWPRE 0.25 0.25 0.25 0.25 tCK DQS write preamble setup time tWPRES 0 DQS write postamble tWPST 0.4 Write recovery time tWR 15 15 15 15 ns Internal WRITE to READ command delay tWTR 1 1 1 1 tCK Data valid output window NA tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ 0 0.6 0.4 0 0.6 0.4 0 0.6 0.4 0.6 Notes 19 ns 10,11 tCK 9 ns 13 REFRESH to REFRESH command interval tREFC 70.3 70.3 70.3 70.3 μs 12 Average periodic refresh interval tREFI 7.8 7.8 7.8 7.8 μs 12 Terminating voltage delay to VCC tVTD 0 0 0 0 ns Exit SELF REFRESH to non-READ command tXSNR 75 75 75 75 ns Exit SELF REFRESH to READ command tXSRD 200 200 200 200 tCK November 2004 Rev. 3 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs W3EG72126S-D3 -JD3 -AJD3 PRELIMINARY Notes 1. All voltages referenced to VSS 2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at normal reference / supply voltage levels, but the related specifications and device operations are guaranteed for the full voltage range specified. 3. Outputs are measured with equivalent load: 11. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be high during this time, depending on tDQSS. 12. The refresh period is 64ms. This equates to an average refresh rate of 7.8125µs. However, an AUTO REFRESH command must be asserted at least once every 70.3µs; burst refreshing or posting by the DRAM controller greater than eight refresh cycles is not allowed. 13. The valid data window is derived by achieving other specifications - tHP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycled variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55. VTT Output (VOUT) 4. 5. 6. 50 50Ω Reference Point 30pF AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between VIL(AC) and VIH(AC). The AC and DC input level specifications are defined in the SSTL_ 2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [high] level). For slew rates less than 1V/ns and greater than or equal to 0.5V/ ns. If the slew rate is less than 0.5V/ns, timing must be derated: tIS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns. tIH has 0ps added, that is, it remains constant. If the slew rate exceeds 4.5V/ns, functionality is uncertain. For 335, slew rates must be greater than or equal to 0.5V/ns. 14. Referenced to each output group: x4 = DQS with DQ0-DQ3. 15. READs and WRITEs with auto precharge are not allowed to be issued until tRAS (MIN) can be satisfied prior to the internal precharge command being issued. 16. JEDEC specifies CK and CK# input slew rate must be > 1V/ns (2V/ns differentially). 17. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100mV/ns reduction in slew rate. If slew rates exceed 4V/ns, functionality is uncertain. 18. tHP min is the lesser of tCL min and tCH min actually applied to the device CK and CK# inputs, collectively during bank active. 7. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.3 x VCCQ is recognized as LOW. 19. tHZ (MAX) will prevail over the tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will prevail over tDQSCK (MIN) + PRE (MAX) condition. 8. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) and begins driving (LZ). 20. For slew rates greater than 1V/ns the (LZ) transition will start about 310ps earlier. 21. CKE must be active (High) during the entire time a refresh command is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until tRFC has been satisfied. 22. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands). 9. 10. The intent of the “Don’t Care” state after completion of the postamble is the DQS-driven signal should either be HIGH, LOW, or high-Z, and that any signal transition within the input switching region must follow valid input requirements. That is, if DQS transitions HIGH (above VIHDC (MIN) then it must not transition LOW (below VIHDC) prior to tDQSH (MIN). This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. November 2004 Rev. 3 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY ORDERING INFORMATION FOR JD3 Part Number Speed CAS Latency tRCD tRP Height* W3EG72126S335JD3 166MHz/333Mb/s 2.5 3 3 30.48 (1.20") W3EG72126S262JD3 133MHz/266Mb/s 2 2 2 30.48 (1.20") W3EG72126S263JD3 133MHz/266Mb/s 2 3 3 30.48 (1.20") W3EG72126S265JD3 133MHz/266Mb/s 2.5 3 3 30.48 (1.20") W3EG72126S202JD3 100MHz/200Mb/s 2 2 2 30.48 (1.20") Note: Consult factory for availability of lead-free products. (F = Lead-Free, G = RoHS compliant) Vendor Code: M = Micron, S = Samsung PACKAGE DIMENSIONS FOR JD3 133.48 (5.255" MAX.) 131.34 (5.171") 128.95 (5.077") 3.99 (0.157 (2x)) 3.81 (0.150 MAX) 30.48 (1.20 MAX) 17.78 (0.700) 10.01 (0.394) 6.35 (0.250) 64.77 (2.550) 6.35 (0.250) 49.53 (1.950) 1.27 (0.050 TYP.) 1.78 (0.070) 2.31 (0.091) (2x) 3.00 (0.118) (4x) 3.99 (0.157) (MIN) 1.27 ± 0.10 (0.050 ± 0.004) * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES) November 2004 Rev. 3 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY ORDERING INFORMATION FOR AJD3 Part Number Speed CAS Latency tRCD tRP Height* W3EG72126S335AJD3 166MHz/333Mb/s 2.5 3 3 28.70 (1.13") W3EG72126S262AJD3 133MHz/266Mb/s 2 2 2 28.70 (1.13") W3EG72126S263AJD3 133MHz/266Mb/s 2 3 3 28.70 (1.13") W3EG72126S265AJD3 133MHz/266Mb/s 2.5 3 3 28.70 (1.13") W3EG72126S202AJD3 100MHz/200Mb/s 2 2 2 28.70 (1.13") Note: Consult factory for availability of lead-free products. (F = Lead-Free, G = RoHS compliant) Vendor Code: M = Micron, S = Samsung PACKAGE DIMENSIONS FOR AJD3 133.48 (5.255" MAX.) 131.34 (5.171") 128.95 (5.077") 3.99 (0.157 (2x)) 3.81 (0.150 MAX) 28.70 (1.13 MAX) 17.78 (0.700) 10.01 (0.394) 6.35 (0.250) 64.77 (2.550) 6.35 (0.250) 49.53 (1.950) 1.27 (0.050 TYP.) 1.78 (0.070) 2.31 (0.091) (2x) 3.00 (0.118) (4x) 3.99 (0.157) (MIN) 1.27 ± 0.10 (0.050 ± 0.004) * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES) November 2004 Rev. 3 12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY ORDERING INFORMATION FOR D3 Part Number Speed CAS Latency tRCD tRP Height* W3EG72126S335D3 166MHz/333Mb/s 2.5 3 3 28.58 (1.125") W3EG72126S262D3 133MHz/266Mb/s 2 2 2 28.58 (1.125") W3EG72126S263D3 133MHz/266Mb/s 2 3 3 28.58 (1.125") W3EG72126S265D3 133MHz/266Mb/s 2.5 3 3 28.58 (1.125") W3EG72126S202D3 100MHz/200Mb/s 2 2 2 28.58 (1.125") Note: Consult factory for availability of lead-free products. (F = Lead-Free, G = RoHS compliant) Vendor Code: M = Micron, S = Samsung PACKAGE DIMENSIONS FOR D3 Not recommended for new designs D E D N 133.48 (5.255" MAX.) 131.34 (5.171") 128.95 (5.077") 3.99 (0.157 (2x)) E M M O C E 17.78 (0.700) R T 10.01 (0.394) 6.35 (0.250) O N 64.77 (2.550) 3.81 (0.150 MAX) 6.35 (0.250) 49.53 (1.950) 28.58 (1.125 MAX) 1.27 (0.050 TYP.) 1.78 (0.070) 2.31 (0.091) (2x) 3.00 (0.118) (4x) 3.99 (0.157) (MIN) 1.27 ± 0.10 (0.050 ± 0.004) * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES) November 2004 Rev. 3 13 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY PART NUMBERING GUIDE W 3 E G 72 126M S xxx D3 x F/G WEDC SDRAM DDR GOLD BUS WIDTH DEPTH: 256 = 256Mb 2.5V SPEED (MHz): 166, 133, 100MHZ PACKAGE: JD3, AJD3 COMPONENT VENDOR: M = Micron, S = Samsung F = LEAD-FREE, G = RoHS COMPLIANT November 2004 Rev. 3 14 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY Document Title 1GB - 128Mx72, DDR SDRAM Registered Module Revision History Rev # History Release Date Status Rev 0 Initial Release 3-18-02 Advanced Rev 1 Added 333MHz Speed 1-30-03 Advanced 3-3-04 Preliminary November 2004 Preliminary Rev 2 Corrected Incidentals (abbreviations, / & — to #, symbols, etc.) 2.1 Corrected pages 1, 2, 4, 5, 6, 8, 9, 10 2.2 Corrected page 7 : Spec Items and Test Conditions 2.3 Added JD3 and AJD3 package options 2.4 Added "Not recommended for New Designs" to D3 2.5 Added document title page 2.6 Removed "ED" for Part Marking Rev 3 3.1 Added Lead-Free and RoHS note 3.2 Added vendor code options M = Micron S = Samsung November 2004 Rev. 3 15 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com