F12 N6 0 WF WFF 12N6 N60 on N-C hannel MOS FET Silic Silico N-Ch MOSF Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 39nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Desc Descrription This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well G D suited for high efficiency switch model power supplies, power factor TO220F S correction and half bridge and full bridge resonant topology line a Electronic lamp ballast. olute Max ngs Abs Abso Maxiimum Rati Ratin Symbol VDSS ID Parameter Value Units 600 V Continuous Drain Current(@Tc=25℃) 12* A Continuous Drain Current(@Tc=100℃) 7.6* A 48* A ±30 V 880 mJ 25 mJ 4.5 V/ns 51 W 0.41 W/℃ -55~150 ℃ 300 ℃ Drain Source Voltage IDM Drain Current Pulsed VGS Gate to Source Voltage Single Pulsed Avalanche Energy 2) Repetitive Avalanche Energy 1) EAS EAR dv/dt (Note1) Peak Diode Recovery dv/dt (Note (Note (Note 3) Total Power Dissipation(@Tc=25℃) PD TJ, Tstg TL Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes *Drain current limited by maximum junction temperature ermal Charac Th The Charactterist eristiics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 2.45 ℃/W RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev. C Nov.2008 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T03-1 F12 N6 0 WF WFF 12N6 N60 al Charac Electric Electrica Charactterist eristiics (Tc = 25 25°°C) Characteristics Gate leakage current Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS = 600 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 600 - - V Break Voltage Temperature Coefficient ΔBVDSS/ ID=250μA, Referenced to 25℃ - 0.5 - V/℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 3 - 4.5 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID =6.0A - - 0.65 Ω Forward Transconductance gfs VDS = 50 V, ID =6.0A - 15 Input capacitance Ciss VDS = 25 V, - 1790 2355 Reverse transfer capacitance Crss VGS = 0 V, - 23 31 Output capacitance Coss f = 1 MHz - 175 232 Turn−on Rise time tr VDD =300 V, - 133 175 Turn−on Delay time ton ID =12 A - 80 100 Turn−off Fall time tf RG=9.1 Ω - 100 160 Turn−off Delay time toff RD=31 Ω - 233 310 Total gate charge (gate−source plus gate−drain) Qg VDD = 400 V, - 39 52 Gate−source charge Qgs VGS = 10 V, - 8.5 - Gate−drain (“miller”) Charge Qgd ID =1 A - 19 - Gate−source breakdown voltage Drain cut−off current Switchi ng time ΔTJ S pF ns (Note4,5) (Note4,5) nC −Drain Rati ngs and Charac Source Source− Ratin Charactterist eristiics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 12 A Pulse drain reverse current IDRP - - - 48 A Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 12 A, VGS = 0 V, - 418 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 4.85 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /7 Steady, keep you advance F12 N6 0 WF WFF 12N6 N60 Fig. 1 On-State Characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 Breakdown Voltage Variation vs Temperature Fig.6 Gate Charge Characteristics 3 /7 Steady, keep you advance F12 N6 0 WF WFF 12N6 N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4 /7 Steady, keep you advance F12 N6 0 WF WFF 12N6 N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5 /7 Steady, keep you advance F12 N6 0 WF WFF 12N6 N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6 /7 Steady, keep you advance F12 N6 0 WF WFF 12N6 N60 22 0F Pa ckage Dimension TOO-22 220 Pac Unit: mm 7 /7 Steady, keep you advance