WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 n FEATURES n Access Times of 15, 17, 20, 25, 35, 45, 55ns n Commercial, Industrial and Military Temperature Ranges n MIL-STD-883 Compliant Devices Available n Low Power Data Retention - only available in G2T package type n 5 Volt Power Supply Packaging n Low Power CMOS • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400) • 68 lead, 40mm CQFP (G4T)1, 3.56mm (0.140") (Package 502). • 68 lead, 22.4mm CQFP (G2T)1, 4.57mm (0.180"), (Package 509) • 68 lead, 23.9mm Low Profile CQFP (G1U), 3.57mm (0.140"), (Package 519) • 68 lead, 23.9mm Low Profile CQFP (G1T), 4.06 mm (0.160"), (Package 524) n Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8 n TTL Compatible Inputs and Outputs n Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation n Weight: WS128K32-XG1UX - 5 grams typical WS128K32-XG1TX - 5 grams typical WS128K32-XG2TX 1 - 8 grams typical WS128K32-XH1X - 13 grams typical WS128K32-XG4TX1 - 20 grams typical n All devices are upgradeable to 512Kx32 Note 1: Package Not Recommended For New Design FIG. 1 PIN CONFIGURATION FOR WS128K32N-XH1X PIN DESCRIPTION T OP VIEW I/O0-31 Data Inputs/Outputs A0-16 Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable V CC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM November 2001 Rev. 9 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX FIG. 2 PIN C ONFIGURATION F OR WS128K32-XG4TX 1 PIN DESCRIPTION T OP VIEW I/O0-31 Data Inputs/Outputs A0-16 Address Inputs WE Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM Note 1: Package Not Recommended For New Design FIG. 3 PIN C ONFIGURATION F OR WS128K32-XG2TX1, WS128K32-XG1TX AND WS128K32-XG1UX PIN DESCRIPTION T OP VIEW I/O 0-31 Data Inputs/Outputs A0-16 Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM Note 1: Package Not Recommended For New Design White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 2 WS128K32-XXX ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 +125 °C °C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active Operating Temperature Storage Temperature TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 °C 7.0 V Supply Voltage VCC -0.5 CAPACITANCE (TA = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 V CC + 0.3 V Input Low Voltage VIL -0.3 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C Symbol Conditions Max OE capacitance COE VIN = 0 V, f = 1.0 MHz WE1-4 capacitance HIP (PGA) H1 CQFP G4 CQFP G2T CQFP G1U/G1T CWE VIN = 0 V, f = 1.0 MHz Unit 50 pF pF 20 50 20 20 CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 20 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 20 pF Address input capacitance C AD VIN = 0 V, f = 1.0 MHz 50 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C Parameter Sym Conditions +125°C) TO -15 Min -17 Max Min -20 Max Min -25 Max Min Units Max Input Leakage Current I LI VCC = 5.5, VIN = GND to VCC 10 10 10 10 Output Leakage Current I LO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 10 µA Operating Supply Current I CC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 600 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 80 80 80 60 mA Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 0.4 0.4 0.4 V Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 Parameter Sym 2.4 2.4 Conditions 2.4 -35 Min 2.4 -45 Max Min µA V -55 Max Min Units Max Input Leakage Current I LI VCC = 5.5, VIN = GND to VCC 10 10 10 Output Leakage Current I LO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 µA Operating Supply Current I CC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 60 60 60 mA Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 0.4 0.4 V IOH = -1.0mA, VCC = 4.5 Output High Voltage VOH NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V DATA (TA = -55°C Characteristic Sym TO 2.4 2.4 2.4 µA V CHARACTERISTICS* RETENTION +125°C), (TA = -40°C Conditions TO +85°C) Typ Max Data Retention Voltage VCC VCC = 2.0V 2 - - V Data Retention Quiescent Current I CCDR CS • VCC -0.2V - 1 2 mA Chip Disable to Data Retention Time (1) T CDR VIN • VCC -0.2V 0 - or VIN - 0.2V Operation Recovery Time (1) TR NOTE: Parameter guaranteed, but not tested. *Low Power Data Retention available only in G2T Package Type. Min TRC 3 Units - ns - ns White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX AC CHARACTERISTICS (V CC = 5.0V, GND = 0V, T A = -55°C Parameter Symbol Read Cycle -15 Min Read Cycle Time t RC Address Access Time tAA Output Hold from Address Change tOH Chip Select Access Time t ACS -17 Max 15 Min -20 Max 17 0 Min Min 10 0 Min 45 Units Max 55 ns 55 ns 55 ns 30 ns 0 35 15 Min 45 0 25 12 -55 Max 35 0 20 10 -45 Max 25 0 17 Min 35 20 0 -35 Max 25 17 15 +125°C) -25 Max 20 15 TO ns 45 Output Enable to Output Valid tOE Chip Select to Output in Low Z t CLZ 1 3 3 3 3 3 20 3 25 3 Output Enable to Output in Low Z t OLZ 1 0 0 0 0 0 0 0 Chip Disable to Output in High Z t CHZ 1 12 12 12 12 20 20 20 ns Output Disable to Output in High Z t OHZ 1 12 12 12 12 20 20 20 ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (V CC = 5.0V, GND = 0V, T A = -55°C Parameter Symbol Write Cycle -15 Min -17 Max Min TO -20 Max Min +125°C) -25 Max Min -35 Max Min -45 Max Min -55 Max Min Units Max Write Cycle Time t WC 15 17 20 25 35 45 t CW 14 14 15 20 25 30 WS128K32-XXX / 55 EDI8C32128C 45 ns Chip Select to End of Write Address Valid to End of Write t AW 14 15 15 20 25 30 45 ns Data Valid to End of Write t DW 10 10 12 15 20 25 25 ns Write Pulse Width t WP 14 14 15 20 25 30 45 ns Address Setup Time t AS 0 0 0 0 0 0 0 ns Address Hold Time t AH 0 0 0 0 0 0 0 ns Output Active from End of Write t OW 1 3 3 3 3 4 4 4 Write Enable to Output in High Z t WHZ 1 Data Hold Time tDH 10 0 10 12 0 0 15 0 20 0 25 ns 25 0 ns 0 ns ns 1. This parameter is guaranteed by design but not tested. FIG. 4 AC T EST CIRCUIT AC T EST C ONDITIONS Parameter Typ Unit Input Pulse Levels VIL = 0, V IH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 4 WS128K32-XXX FIG. 5 T IMING WAVEFORM - FIG. 6 READ C YCLE WRITE CYCLE - WE C ONTROLLED FIG. 7 WRITE CYCLE - CS CONTROLLED WS32K32-XHX 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 502: 68 LEAD, CERAMIC QUAD FL AT PACK, LOW PROFILE CQFP (G4T)1 ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Note 1: Package Not Recommended For New Design White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 6 WS128K32-XXX PACKAGE 509: 68 LEAD, LOW PROFILE CERAMIC QUAD FL AT PACK, CQFP (G2T)1 ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Note 1: Package Not Recommended For New Design PACKAGE 519: 68 LEAD, CERAMIC QUAD FL AT PACK, LOW PROFILE CQFP (G1U) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 8 WS128K32-XXX ORDERING INFORMATION W S 128K 32 X - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE: H1= 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400) G2T 1 = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509) G1U = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 519) G1T = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 524) G4T1 = 40 mm Low Profile CQFP (Package 502) ACCESS TIME (ns) IMPROVEMENT MARK: N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades L = Low Power * ORGANIZATION, 128Kx32 User configurable as 256Kx16 or 512Kx8 SRAM WHITE ELECTRONIC DESIGNS CORPORATION * Low Power Data Retention only available in G2T Package Type Note 1: Package Not Recommended For New Design 9 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX DEVICE TYPE SPEED PACKAGE SMD NO. 128K x 32 SRAM Module 55ns 66 pin HIP (H1) 5962-93187 05H4X 128K x 32 SRAM Module 45ns 66 pin HIP (H1) 5962-93187 06H4X 128K x 32 SRAM Module 35ns 66 pin HIP (H1) 5962-93187 07H4X 128K x 32 SRAM Module 25ns 66 pin HIP (H1) 5962-93187 08H4X 128K x 32 SRAM Module 20ns 66 pin HIP (H1) 5962-93187 09H4X 128K x 32 SRAM Module 17ns 66 pin HIP (H1) 5962-93187 10H4X 128K x 32 SRAM Module 15ns 66 pin HIP (H1) 5962-93187 11H4X 128K x 32 SRAM Module 55ns 68 lead CQFP Low Profile (G4T)1 5962-95595 05HYX1 128K x 32 SRAM Module 45ns 68 lead CQFP Low Profile (G4T) 1 5962-95595 06HYX1 128K x 32 SRAM Module 35ns 68 lead CQFP Low Profile (G4T) 1 5962-95595 07HYX1 128K x 32 SRAM Module 25ns 68 lead CQFP Low Profile (G4T) 1 5962-95595 08HYX1 128K x 32 SRAM Module 20ns 68 lead CQFP Low Profile (G4T) 1 5962-95595 09HYX1 128K x 32 SRAM Module 17ns 68 lead CQFP Low Profile (G4T)1 5962-95595 10HYX1 128K x 32 SRAM Module 15ns 68 lead CQFP Low Profile (G4T)1 5962-95595 11HYX1 128K x 32 SRAM Module 55ns 68 lead CQFP/J (G2T)1 5962-95595 05HMX1 128K x 32 SRAM Module 45ns 68 lead CQFP/J (G2T) 1 5962-95595 06HMX1 128K x 32 SRAM Module 35ns 68 lead CQFP/J (G2T)1 5962-95595 07HMX1 128K x 32 SRAM Module 25ns 68 lead CQFP/J (G2T)1 5962-95595 08HMX1 128K x 32 SRAM Module 20ns 68 lead CQFP/J (G2T) 1 5962-95595 09HMX1 128K x 32 SRAM Module 17ns 68 lead CQFP/J (G2T) 1 5962-95595 10HMX1 128K x 32 SRAM Module 15ns 68 lead CQFP/J (G2T) 1 5962-95595 11HMX1 128K x 32 SRAM Module 55ns 68 lead CQFP/J(G1U) 5962-95595 05H9X 128K x 32 SRAM Module 45ns 68 lead CQFP/J (G1U) 5962-95595 06H9X 128K x 32 SRAM Module 35ns 68 lead CQFP/J (G1U) 5962-95595 07H9X 128K x 32 SRAM Module 25ns 68 lead CQFP/J (G1U) 5962-95595 08H9X 128K x 32 SRAM Module 20ns 68 lead CQFP/J (G1U) 5962-95595 09H9X 128K x 32 SRAM Module 17ns 68 lead CQFP/J (G1U) 5962-95595 10H9X 128K x 32 SRAM Module 15ns 68 lead CQFP/J (G1U) 5962-95595 11H9X Note 1: Package Not Recommended For New Design White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 10