X006 0.8 A sensitive gate SCRs Features ■ IT(RMS) = 0.8 A ■ VDRM/VRRM = 600 V ■ IGT = 200 µA A G K Description Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interrupters, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, etc. A K K Rev 5 G A TO-92 (X00602A) Available in though-hole or surface-mount packages, these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power losses and high reliability in harsh environments. April 2008 G A SOT-223 (X00602N) 1/9 www.st.com 9 Characteristics X006 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter IT(RMS) RMS on-state current (180 °Conduction angle) IT(AV) Average on-state current (180 °Conduction angle) ITSM Non repetitive surge peak on-state current I ²t TO-92 Tl = 85 °C SOT-223 Ttab = 100 °C TO-92 Tl = 85 °C SOT-223 Ttab = 100 °C tp = 8.3 ms tp = 10 ms Value Unit 0.8 A 0.5 A 10 Tj = 25 °C A 9 I²t Value for fusing tp = 10 ms Tj = 25 °C 0.4 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125 °C 1 A Tj = 125 °C 0.1 W - 40 to + 150 - 40 to + 125 °C PG(AV) Tstg Tj Table 2. Average gate power dissipation Storage junction temperature range Operating junction temperature range Electrical characteristics Symbol IGT Test Conditions Value Unit MIN. 15 MAX. 200 MAX. 0.8 V MIN. 0.2 V µA VD = 12 V, RL = 140 Ω VGT VGD VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ Tj = 125 °C VRG IRG = 10 µA MIN. 5 V IH IT = 50 mA, RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA, RGK = 1 kΩ MAX. 6 mA dV/dt VD = 67% VDRM, RGK = 1 kΩ Tj = 125 °C MIN. 25 V/µs VTM ITM = 1 A, tp = 380 µs Tj = 25 °C MAX. 1.35 V Vt0 Threshold voltage Tj = 125 °C MAX. 0.85 V Rd Dynamic resistance Tj = 125 °C MAX. 245 mΩ Tj = 25 °C MAX. 1 Tj = 125 °C MAX. 100 IDRM IRRM 2/9 VDRM = VRRM , RGK = 1 kΩ µA X006 Characteristics Table 3. Thermal resistances Symbol Parameter Value TO-92 150 SOT-223 60 Junction to lead (DC) TO-92 70 Junction to tab (DC) SOT-223 30 Rth(j-a) Junction to ambient (DC) Rth(j-l) Rth(j-t) 2 S = 5 cm Unit °C/W Figure 1. Maximum average power Figure 2. dissipation versus average on-state current P(W) Average and DC on-state current versus case temperature (TO-92) IT(AV)(A) 0.6 1.0 α = 180° TO-92 0.9 D.C. 0.5 0.8 0.7 0.4 0.6 0.3 α = 180° 0.5 0.4 0.2 0.3 360° 0.2 0.1 α IT(AV)(A) 0.1 Tl(°C) 0.0 0.0 0.0 0.1 Figure 3. 0.2 0.3 0.4 0.5 0 0.6 Average and D.C. on-state current Figure 4. versus ambient temperature (epoxy printed circuit board FR4, copper thickness = 35 µm, SCU = 0.5 cm2) (TO-92) IT(AV)(A) 25 50 75 100 125 Average and DC on-state current versus case temperature (SOT-223) IT(AV)(A) 1.0 1.0 TO-92 SCU = 0.5 cm2 0.9 D.C. SOT-223 0.9 D.C. 0.8 0.8 0.7 0.7 0.6 0.6 α = 180° α = 180° 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 Tamb(°C) 0.0 Ttab(°C) 0.0 0 25 50 75 100 125 0 25 50 75 100 125 3/9 Characteristics Figure 5. X006 Average and DC on-state current Figure 6. versus ambient temperature (epoxy PCB FR4, copper thickness = 35 µm, SCU = 5 cm2) (SOT-223) Relative variation of thermal impedance junction to ambient versus pulse duration (PCB FR4, copper thickness = 35 µm, SCU = 0.5 cm2) (TO-92) Zth(j-a)/Rth(j-a) IT(AV)(A) 1.00 1.0 TO-92 SCU = 0.5 cm2 SOT-223 SCU = 0.5 cm2 0.9 D.C. 0.8 0.7 0.6 α = 180° 0.10 0.5 0.4 0.3 0.2 0.1 Tamb(°C) tp(s) 0.0 0.01 0 25 Figure 7. 50 75 100 125 1.E-03 1.E-02 Figure 8. Relative variation of thermal impedance junction to ambient versus pulse duration (PCB FR4, copper thickness = 35 µm, SCU = 0.5 cm2) (SOT-223) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Thermal resistance junction to ambient versus copper surface under tab (PCB FR4, copper thickness = 35 µm) (SOT-223) Rth(j-a)(°C/W) Zth(j-a)/Rth(j-a) 130 1.00 SOT-223 SCU = 0.5 cm2 120 110 100 90 80 70 0.10 60 50 40 30 20 S(cm²) 10 tp(s) 0.01 0 1.E-03 Figure 9. 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 10. Relative variation of holding current versus gate-cathode resistance (typical values) IH[RGK] / IH[RGK=1kΩ] IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 1.6 3.5 1.4 3.0 1.2 2.5 1.0 2.0 IH & IL 0.8 1.5 0.6 IGT 1.0 0.4 0.5 0.2 RGK(kΩ) Tj(°C) 0.0 0.0 -40 -30 -20 -10 4/9 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 5.0 X006 Characteristics Figure 11. Relative variation of dV/dt immunity Figure 12. Relative variation of dV/dt immunity versus gate-cathode resistance versus gate-cathode capacitance (typical values) (typical values) dV/dt[RGK] / dV/dt[RGK=1kΩ] dV/dt[CGK] / dV/dt[RGK=1kΩ] 100 100.0 VD = 0.67 x VDRM RGK = 1kΩ VD = 0.67 x VDRM 10.0 10 1.0 RGK(kΩ) CGK(nF) 1 0.1 1.0E-01 1.0E+00 1 1.0E+01 10 Figure 13. Surge peak on-state current versus Figure 14. Non repetitive surge peak on-state number of cycles current for a sinusoidal pulse with width tP < 10ms, and corresponding value of I2t ITSM(A) ITSM(A), I2t (A2s) 10 1.E+02 Tj initial = 25°C 9 8 ITSM tp=10ms 7 One cycle 1.E+01 Non repetitive Tj initial=25°C 6 5 4 Repetitive TC=25°C 1.E+00 3 I2t 2 1 tp(ms) Number of cycles 0 1.E-01 1 10 100 1000 0.01 0.10 1.00 10.00 Figure 15. On-state characteristics (maximum values) ITM(A) 10.00 Tj max.: Vt0=0.85V Rd=245mΩ 1.00 Tj=125°C Tj=25°C 0.10 VTM(V) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 5/9 Ordering information scheme 2 X006 Ordering information scheme Figure 16. Ordering information scheme X 006 02 M ZBlank 1AA2 Sensitive SCR series Current 006 = 0.8 A Sensitivity 02 = 200 µA Voltage M = 600 V Package A = TO-92 (A"Blank") N = SOT-223 (N"No Blank”) Packing mode 1AA2 = Bulk 2AL2 = Ammopack 5AL2 = Tape & reel (TO-92) 5BA4 = Tape & reel (SOT-223) 6/9 X006 3 Package information Package information ● Epoxy meets UL94, V0 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 4. TO-92 (plastic) dimensions Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A a B A 1.35 B C 4.70 C D F Table 5. E 0.053 0.185 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.50 0.019 SOT-223 dimensions Dimensions Ref. V A A1 B Millimeters Min. c A A1 e1 Typ. Inches Max. Min. Typ. Max. 1.80 0.071 0.02 0.10 0.001 0.004 B 0.60 0.70 0.85 0.024 0.027 0.033 B1 2.90 3.00 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 0.009 0.010 0.014 (1) 6.30 6.50 6.70 0.248 0.256 0.264 D B1 D 4 H E 1 2 e 3 e 2.3 0.090 e1 4.6 0.181 E(1) 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V 10° max 1. Do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm (0.006inches) 7/9 Ordering information X006 Figure 17. SOT-223 footprint (dimensions in mm)t 3.25 1.32 5.16 7.80 1.32 2.30 4 0.95 Ordering information Table 6. Ordering information Order code Marking Package Weight X00602MA 1AA2 X00602MA 2AL2 X0602 MA TO-92 0.2 g X00602MA 5AL2 Base qty Delivery mode 2500 Bulk 2000 Ammopack 2000 Tape and reel X00602MN5BA4 5 SOT-223 0.12 g 1000 Revision history Table 7. 8/9 X06 2M Document revision history Date Revision Changes Jan-2002 3 Last update. 08-Aug-2006 4 SOT-223 package added. 1-Apr-2008 5 Reformatted to current standards. Device X00605 removed. Updated dimensions in Table 5. X006 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9