Composite Transistors XP04501 (XP4501) Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) × 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 ■ Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 50 V VEBO 7 V IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 5H Internal Connection 1 Parameter Collector to base voltage Tr1 6 5 2 3 ■ Electrical Characteristics 0.2±0.1 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Collector cutoff current 160 460 0.3 V Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XP04501 PT — Ta IC — VCE IB — VBE 1200 60 250 100 50 1000 140µA 40 120µA 100µA 30 80µA 20 60µA 40µA 10 600 400 200 0 20 40 60 0 0 80 100 120 140 160 2 4 6 8 10 0 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) IC — VBE Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C Collector current IC (mA) 200 160 25˚C Ta=75˚C –25˚C 80 40 160 120 80 40 0 0 0.4 0.8 1.2 1.6 0 2.0 0 Base to emitter voltage VBE (V) 200 hFE — IC 400 600 300 –25˚C 200 100 0.3 1 3 1 0.3 10 30 Collector current IC (mA) 100 25˚C 0.1 Ta=75˚C –25˚C 0.03 0.3 1 3 10 30 100 Collector current IC (mA) NV — IC 240 240 Noise voltage NV (mV) Transition frequency fT (MHz) 25˚C IC/IB=10 3 0.01 0.1 1000 VCB=10V Ta=25˚C Ta=75˚C 400 1.0 10 fT — I E VCE=10V 0 0.1 800 300 500 0.8 30 Base current IB (µA) 600 0.6 100 VCE=10V 200 0.4 VCE(sat) — IC 240 120 0.2 Base to emitter voltage VBE (V) IC — I B 240 Collector current IC (mA) 800 20µA 0 Forward current transfer ratio hFE Base current IB (µA) 150 0 2 VCE=10V Ta=25˚C 50 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=160µA 180 120 60 VCE=10V GV=80dB 200 Function=FLAT Ta=25˚C 160 Rg=100kΩ 120 80 22kΩ 4.7kΩ 40 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 10 20 30 50 100 200 300 500 1000 Collector current IC (µA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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