Composite Transistors XP1114 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1114 × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 ● 0.65 ■ Features 0.65 0.425 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO –50 V VCEO –50 V IC –100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 0.2±0.1 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 7Q Internal Connection 1 Tr1 5 2 3 ■ Electrical Characteristics Parameter 4 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Collector cutoff current *1 Tr2 ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA – 0.2 mA – 0.25 V Emitter cutoff current IEBO VEB = –6V, IC = 0 Forward current transfer ratio hFE VCE = –10V, IC = –5mA 80 Forward current transfer hFE ratio hFE (small/large)*1 VCE = –10V, IC = –5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz 0.99 –4.9 V – 0.2 Transition frequency fT Input resistance R1 –30% 10 80 +30% Resistance ratio R1/R2 0.17 0.21 0.25 V MHz kΩ Ratio between 2 elements 1 Composite Transistors XP1114 PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC Collector current IC (mA) IB=–1.0mA –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA –20 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –140 0 0 –2 –4 –6 –8 –10 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –1 –3 –10 –10000 –30 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO VO=–5V Ta=25˚C –1000 –3000 –300 –1000 –100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 200 IO — VIN f=1MHz IE=0 Ta=25˚C 5 300 Collector current IC (mA) Cob — VCB 6 VCE=–10V –25˚C –0.01 –0.1 –0.3 –12 400 IC/IB=10 –30 Collector to emitter voltage VCE (V) –300 –100 –30 –10 VO=–0.2V Ta=25˚C –30 –10 –3 –1 1 –0.3 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 2 hFE — IC –100 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.1 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100