MOSFET SMD Type N-Channel Power MOSFET XP151A13 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-state resistance : 0.4 3 RDS(on) = 0.25Ω Max ( VGS = 1.5V ) 1 ● Ultra high-speed switching 0.55 RDS(on) = 0.14ΩMax ( VGS = 2.5V ) +0.1 1.3-0.1 +0.1 2.4-0.1 RDS(on) = 0.1ΩMax ( VGS = 4.5V ) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Gate Protect Diode Built-in 0-0.1 +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 1 A IDP 4 A Drain Current-Continuous -Pulse Drain Current Maximum Power Dissipation * Thermal Resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range PD 0.5 W RθJA 250 ℃/W TJ,TSTG - 55 to 150 ℃ * When implemented on a ceramic PCB ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Zero Gate Voltage Drain Current IDSS VGS = 20V , VDS = 0V 10 μA Gate-Body Leakage IGSS VDS = ±8V , VGS = 0V ±10 μA 1.2 V Gate Source cutoff Voltage Drain-Source On-State Resistance Forward Transfer Adittance Body Drain Diode Forward Voltage Vgs(off) RDS(on) |Yfs| VF ID=1mA,VDS=10V 0.5 VGS = 4.5V , ID =0.5A 0.075 0.1 VGS = 2.5V , ID = 0.5A 0.1 0.14 0.25 VGS = 1.5V , ID = 0.1A 0.17 ID=0.5A,VDS=10V 4.2 IF=1A,,VGS=0V 0.8 VDS = 10V , VGS = 0V,f = 1.0MHz 120 Ω S 1.1 V Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Turn-On Delay Time td(on) 10 ns tr 15 ns td(off) 75 ns tf 65 ns Rise Time Turn-Off Delay Time Fall Time 220 pF 45 VGS= 5V , ID = 0.5A , VDD=10V www.kexin.com.cn 1 MOSFET SMD Type XP151A13 Drain Current vs. Drain/Source Voltage 4 3.5 3V 3.5 3 2.5V 3 2V 2.5 Vds=10V, Pulse Test 4 3.5V, 4V, 5V Drain Current:Id (A) Drain Current :Id (A) Drain Current vs. Gate/Source Voltage Ta=25℃, Pulse Test 1.5V 2 1.5 1 2.5 2 1.5 25℃ Ta=125℃ 1 0.5 -55℃ 0.5 Vgs=1V 0 0 0 0.5 1 1.5 2 2.5 3 0 Drain/Source Voltage:Vds (V) Drain/Source On-State Resistance :Rds(on) (Ω) 0.2 Id=1A 0.5A 0.1 0.05 0 2.5 Vgs=1.5V 2.5V 0.1 4.5V 0.01 0 1 2 3 4 0 5 1 Gate/Source Voltage:Vgs (V) Pulse Test 0.25 0.2 Id=0.5A Vgs=1.5V 0.1A 0.15 0.5A, 1A 2.5V 0.1 0.5A, 1A 0.05 0 -50 3 4 4.5V Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Vds=10V, Id=1mA 0.4 Gate/Source Cut Off Voltage Variance :Vgs(off) Variance (V) 0.3 2 Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Drain/Source On-State Resistance :Rds(on) (Ω) 2 Ta=25℃, Pulse Test 1 0.15 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 0 50 100 Ambient Temp. :Topr (℃) 2 1.5 Drain/Source On-State Resistance vs. Drain Current Ta=25℃, Pulse Test 0.25 Drain/Source On-State Resistance :Rds(on) (Ω) 1 Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage 0.3 0.5 www.kexin.com.cn 150 -50 0 50 100 Ambient Temp. :Topr (℃) 150 MOSFET SMD Type XP151A13 Capacitance vs. Drain/Source Voltage Vgs=0V, f=1MHz, Ta=25℃ 1000 Ciss Coss 100 Crss Vgs=5V, Vdd≒10V, PW=10μs, duty≦1%, Ta=25℃ 1000 Switching Time:t (ns) 10000 Capacitance:C (pF) Switching Time vs. Drain Current 10 100 td(off) tf tr 10 td(on) 1 0 5 10 15 20 0 0.5 Drain/Source Voltage:Vds (V) 2 Reverse Drain Current vs. Source/Drain Voltage Vds=10V, Id=1A, Ta=25℃ 4 3 2 1 Reverse Drain Current:Idr (A) Gate/Source Voltage:Vgs (V) 1.5 Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge 5 1 Ta=25℃, Pulse Test 4 3.5 3 4.5V 2.5V 1.5V 2.5 2 Vgs=0V, -4.5V 1.5 1 0.5 0 0 0 2 4 6 8 0 Gate Charge:Qg (nc) 0.2 0.4 0.6 0.8 1 Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance:γs(t) Standardized Transition Thermal Resistance vs. Pulse Width Rth(ch-a)=250℃/W, (Implemented on a ceramic PCB) 1 Single Pulse 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width:PW (s) www.kexin.com.cn 3