TOREX XP151A12A2MR

XP151A12A2MR
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N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.1Ω (max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 23 Package
■ General Description
Power MOS FET
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Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
■ Features
The XP151A12A2MR is a N-Channel Power MOS FET with low on
Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V )
state resistance and ultra high-speed switching characteristics.
Rds (on) = 0.16Ω ( Vgs = 2.5V )
Because high-speed switching is possible, the IC can be efficiently
Ultra high-speed switching
set thereby saving energy.
Gate Protect Diode Built-in
In order to counter static, a gate protect diode is built-in.
Operational Voltage : 2.5V
The small SOT-23 package makes high density mounting possible.
High density mounting : SOT - 23
■ Pin Configuration
■ Pin Assignment
u
D
3
FUNCTION
PIN NUMBER
PIN NAME
1
G
Gate
2
S
Source
3
D
Drain
2
S
1
G
SOT - 23 Top View
■ Equivalent Circuit
■ Absolute Maximum Ratings
Ta=25 OC
PARAMETER
Drain - Source Voltage
3
2
N - Channel MOS FET
( 1 device built-in )
458
RATINGS
20
UNITS
V
Gate - Source Voltage
Vgss
Id
+ 12
1
V
Drain Current (DC)
Drain Current (Pulse)
Idp
4
A
Reverse Drain Current
Idr
1
A
W
Continuous Channel
1
SYMBOL
Vdss
A
Pd
0.5
Power Dissipation (note)
Channel Temperature
Tch
150
O
C
Storage Temperature
Tstg
-55 to 150
O
C
( note ) : When implemented on a ceramic PCB
■ Electrical Characteristics
DC characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Ta=25°C
UNITS
µA
Drain Cut-off Current
Idss
Vds = 20 , Vgs = 0V
10
Gate-Source Leakage Current
Igss
Vgs = ± 12 , Vds = 0V
± 10
µA
Gate-Source Cut-off Voltage
Vgs (off )
Id = 1mA , Vds = 10V
1.4
V
Drain-Source On-state Resistance
( note )
Rds ( on )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
0.7
Id = 0.5A , Vgs = 4.5V
0.075
0.1
Ω
Id = 0.5A , Vgs = 2.5V
0.12
0.16
Ω
| Yfs |
Id = 0.5A , Vds = 10V
3.3
Vf
If = 1A , Vgs = 0V
0.8
1.1
V
SYMBOL
CONDITIONS
TYP
MAX
Ta=25°C
UNITS
S
( note ) : Effective during pulse test.
Dynamic characteristics
PARAMETER
MIN
Input Capacitance
Ciss
180
pF
Output Capacitance
Coss
Vds = 10V , Vgs = 0V
120
pF
Feedback Capacitance
Crss
f = 1 MHz
45
pF
PARAMETER
SYMBOL
CONDITIONS
Turn-on Delay Time
td ( on )
Rise Time
tr
Vgs = 5V , Id = 0.5A
Turn-off Delay Time
td ( off )
Vdd = 10V
Fall Time
tf
u
Switching characteristics
MIN
TYP
MAX
Ta=25°C
UNITS
10
ns
15
ns
50
ns
45
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a ceramic
PCB
MIN
TYP
250
MAX
UNITS
°C / W
459
XP151A12A2MR
Power MOS FET
■ XP151A12A2MR Electrical Characteristics
Drain Current vs. Drain/Source Voltage
Ta=25℃, Pulse Test
4
3.5
2V
2.5V
2.5
3
Drain Current:Id (A)
3.5V
3V
3
Vds=10V, Pulse Test
4
5V, 4.5V, 4V
3.5
Drain Current:Id (A)
Drain Current vs. Gate/Source Voltage
2
1.5
1
2.5
2
1.5
Vgs=1.5V
0.5
25℃
1
Ta=125℃
-55℃
0.5
0
0
0
0.5
1
1.5
2
2.5
3
0
Drain/Source Voltage:Vds (V)
0.25
0.2
Id=1A
0.15
0.5A
0.1
0.05
2.5
3
2.5V
0.1
4.5V
0.01
0
2
4
6
8
10
0
1
Gate/Source Voltage:Vgs (V)
0.2
Id=1A
Vgs=2.5V
0.5A
0.1
0.5A, 1A
0.05
0
-50
4.5V
0
50
100
Ambient Temp. :Topr (℃)
4
150
Vds=10V, Id=1mA
0.4
Gate/Source Cut Off Voltage Variance
:Vgs(off) Variance (V)
0.25
0.15
3
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Pulse Test
0.3
2
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
Drain/Source On-State Resistance
:Rds(on) (Ω)
2
Ta=25℃, Pulse Test
1
0
460
1.5
Drain/Source On-State Resistance vs. Drain Current
Ta=25℃, Pulse Test
Drain/Source On-State Resistance
:Rds(on) (Ω)
Drain/Source On-State Resistance
:Rds(on) (Ω)
u
1
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
0.3
0.5
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-50
0
50
100
Ambient Temp. :Topr (℃)
150
■ XP151A12A2MR Electrical Characteristics
Capacitance vs. Drain/Source Voltage
Vgs=0V, f=1MHz, Ta=25℃
Ciss
Coss
100
Crss
Vgs=5V, Vdd≒10V, PW=10μs, duty≦1%, Ta=25℃
1000
Switching Time:t (ns)
1000
Capacitance:C (pF)
Switching Time vs. Drain Current
10
100
td(off)
tf
tr
10
td(on)
1
0
5
10
15
20
0
0.5
Drain/Source Voltage:Vds (V)
2
Reverse Drain Current vs. Source/Drain Voltage
Vds=10V, Id=1A, Ta=25℃
8
6
4
2
Ta=25℃, Pulse Test
4
Reverse Drain Current:Idr (A)
Gate/Source Voltage:Vgs (V)
1.5
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
10
1
0
3.5
3
4.5V
u
2.5V
2.5
2
Vgs=0V, -4.5V
1.5
1
0.5
0
0
2
4
6
8
0
Gate Charge:Qg (nc)
0.2
0.4
0.6
0.8
1
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance:γs(t)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth(ch-a)=250℃/W, (Implemented on a ceramic PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
461