XP151A12A2MR ◆ ◆ ◆ ◆ ◆ ◆ N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package ■ General Description Power MOS FET ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems ■ Features The XP151A12A2MR is a N-Channel Power MOS FET with low on Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) state resistance and ultra high-speed switching characteristics. Rds (on) = 0.16Ω ( Vgs = 2.5V ) Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching set thereby saving energy. Gate Protect Diode Built-in In order to counter static, a gate protect diode is built-in. Operational Voltage : 2.5V The small SOT-23 package makes high density mounting possible. High density mounting : SOT - 23 ■ Pin Configuration ■ Pin Assignment u D 3 FUNCTION PIN NUMBER PIN NAME 1 G Gate 2 S Source 3 D Drain 2 S 1 G SOT - 23 Top View ■ Equivalent Circuit ■ Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage 3 2 N - Channel MOS FET ( 1 device built-in ) 458 RATINGS 20 UNITS V Gate - Source Voltage Vgss Id + 12 1 V Drain Current (DC) Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A W Continuous Channel 1 SYMBOL Vdss A Pd 0.5 Power Dissipation (note) Channel Temperature Tch 150 O C Storage Temperature Tstg -55 to 150 O C ( note ) : When implemented on a ceramic PCB ■ Electrical Characteristics DC characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX Ta=25°C UNITS µA Drain Cut-off Current Idss Vds = 20 , Vgs = 0V 10 Gate-Source Leakage Current Igss Vgs = ± 12 , Vds = 0V ± 10 µA Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 1.4 V Drain-Source On-state Resistance ( note ) Rds ( on ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage 0.7 Id = 0.5A , Vgs = 4.5V 0.075 0.1 Ω Id = 0.5A , Vgs = 2.5V 0.12 0.16 Ω | Yfs | Id = 0.5A , Vds = 10V 3.3 Vf If = 1A , Vgs = 0V 0.8 1.1 V SYMBOL CONDITIONS TYP MAX Ta=25°C UNITS S ( note ) : Effective during pulse test. Dynamic characteristics PARAMETER MIN Input Capacitance Ciss 180 pF Output Capacitance Coss Vds = 10V , Vgs = 0V 120 pF Feedback Capacitance Crss f = 1 MHz 45 pF PARAMETER SYMBOL CONDITIONS Turn-on Delay Time td ( on ) Rise Time tr Vgs = 5V , Id = 0.5A Turn-off Delay Time td ( off ) Vdd = 10V Fall Time tf u Switching characteristics MIN TYP MAX Ta=25°C UNITS 10 ns 15 ns 50 ns 45 ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS °C / W 459 XP151A12A2MR Power MOS FET ■ XP151A12A2MR Electrical Characteristics Drain Current vs. Drain/Source Voltage Ta=25℃, Pulse Test 4 3.5 2V 2.5V 2.5 3 Drain Current:Id (A) 3.5V 3V 3 Vds=10V, Pulse Test 4 5V, 4.5V, 4V 3.5 Drain Current:Id (A) Drain Current vs. Gate/Source Voltage 2 1.5 1 2.5 2 1.5 Vgs=1.5V 0.5 25℃ 1 Ta=125℃ -55℃ 0.5 0 0 0 0.5 1 1.5 2 2.5 3 0 Drain/Source Voltage:Vds (V) 0.25 0.2 Id=1A 0.15 0.5A 0.1 0.05 2.5 3 2.5V 0.1 4.5V 0.01 0 2 4 6 8 10 0 1 Gate/Source Voltage:Vgs (V) 0.2 Id=1A Vgs=2.5V 0.5A 0.1 0.5A, 1A 0.05 0 -50 4.5V 0 50 100 Ambient Temp. :Topr (℃) 4 150 Vds=10V, Id=1mA 0.4 Gate/Source Cut Off Voltage Variance :Vgs(off) Variance (V) 0.25 0.15 3 Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Pulse Test 0.3 2 Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Drain/Source On-State Resistance :Rds(on) (Ω) 2 Ta=25℃, Pulse Test 1 0 460 1.5 Drain/Source On-State Resistance vs. Drain Current Ta=25℃, Pulse Test Drain/Source On-State Resistance :Rds(on) (Ω) Drain/Source On-State Resistance :Rds(on) (Ω) u 1 Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage 0.3 0.5 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -50 0 50 100 Ambient Temp. :Topr (℃) 150 ■ XP151A12A2MR Electrical Characteristics Capacitance vs. Drain/Source Voltage Vgs=0V, f=1MHz, Ta=25℃ Ciss Coss 100 Crss Vgs=5V, Vdd≒10V, PW=10μs, duty≦1%, Ta=25℃ 1000 Switching Time:t (ns) 1000 Capacitance:C (pF) Switching Time vs. Drain Current 10 100 td(off) tf tr 10 td(on) 1 0 5 10 15 20 0 0.5 Drain/Source Voltage:Vds (V) 2 Reverse Drain Current vs. Source/Drain Voltage Vds=10V, Id=1A, Ta=25℃ 8 6 4 2 Ta=25℃, Pulse Test 4 Reverse Drain Current:Idr (A) Gate/Source Voltage:Vgs (V) 1.5 Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge 10 1 0 3.5 3 4.5V u 2.5V 2.5 2 Vgs=0V, -4.5V 1.5 1 0.5 0 0 2 4 6 8 0 Gate Charge:Qg (nc) 0.2 0.4 0.6 0.8 1 Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance:γs(t) Standardized Transition Thermal Resistance vs. Pulse Width Rth(ch-a)=250℃/W, (Implemented on a ceramic PCB) 1 Single Pulse 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width:PW (s) 461