TOREX XP131A0616SR

XP131A0616SR
Power MOSFET
◆ N-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance: 0.016Ω MAX
◆ Ultra High-Speed Switching
■
●
●
●
●
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
◆ SOP-8 Package
■ General Description
■ Features
The XP131A0616SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V)
Rds(on)=0.022Ω(Vgs=2.5V)
Rds(on)=0.045Ω(Vgs=1.5V)
Ultra high-speed switching
Operational Voltage: 1.5V
High density mounting: SOP-8
u
■ Pin Configuration
■ Pin Assignment
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
PIN
NUMBER
PIN
NAME
FUNCTION
1~3
S
Source
4
G
Gate
5~8
D
Drain
SOP-8
(TOP VIEW)
■ Absolute Maximum Ratings
■ Equivalent Circuit
1
8
2
7
3
6
4
5
N-Channel MOS FET
(1 device built-in)
Ta=25:
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss
±8
V
Drain Current (DC)
Id
10
A
Drain Current (Pulse)
Idp
30
A
Reverse Drain Current
Idr
10
A
Continuous Channel
Power Dissipation (note)
Pd
2.5
W
Channel Temperature
Tch
150
:
Storage Temperature
Tstg
-55~150
:
Note: When implemented on a glass epoxy PCB
345
XP131A0616SR
Power MOSFET
■ Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Ta=25:
SYMBOL
Idss
CONDITIONS
Vds=20V, Vgs=0V
Gate-Source Leakage Current
Igss
Gate-Source Cut-off Voltage
Vgs(off)
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
MIN
TYP
0.5
MAX
10
UNITS
µA
±1
µA
V
Ω
1.2
0.016
0.022
0.045
Rds(on)
Id=5A, Vgs=4.5V
Id=5A, Vgs=2.5V
Id=1.5A, Vgs=1.5V
0.012
0.016
0.028
Forward Transfer Admittance
(note)
Yfs
Id=5A, Vds=10V
28
Body Drain Diode
Forward Voltage
Vf
If=10A, Vgs=0V
0.85
1.1
V
SYMBOL
CONDITIONS
TYP
MAX
UNITS
Drain-Source On-state
Resistance (note)
Ω
Ω
S
Note: Effective during pulse test.
Dynamic characteristics
PARAMETER
Ta=25:
Input Capacitance
Ciss
Output Capacitance
Coss
Feedback Capacitance
Crss
MIN
Vds=10V, Vgs=0V
f=1MHz
2100
pF
1000
pF
pF
400
u
Switching characteristics
Ta=25:
PARAMETER
SYMBOL
CONDITIONS
MIN
Turn-on Delay Time
td (on)
15
ns
Rise Time
tr
100
ns
Turn-off Delay Time
Fall Time
td (off)
tf
100
20
ns
ns
Vgs=5V, Id=5A
Vdd=10V
TYP
MAX
UNITS
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
346
SYMBOL
CONDITIONS
Rth (ch-a)
Implement on a glass epoxy
resin PCB
MIN
TYP
50
MAX
UNITS
˚C/W
■ Electrical Characteristics
Drain Current vs. Gate/Source Voltage
Drain Current vs. Drain /Source Voltage
Pulse Test, Ta=25:
30
25
2.5V
Drain Current:Id (A)
Drain Current:Id (A)
25
Pulse Test, Vds=10V
30
5V
4V
3V
20
2A
15
1.5V
10
5
20
15
Topr＝25 ℃
10
5
125 ℃
Vgs＝1V
0
0
1
0
2
3
0
1
Drain/Source Voltage:Vds (V)
Pulse Test, Ta=25˚C
Drain/Source On-State Resistance
:Rds (on) (Ω)
0.1
0.04
0.03
Id＝5A
3
Drain/Source On-State Resistance
vs. Drain Current
Pulse Test, Ta=25:
0.05
Drain /Source On-State Resistance
:Rds (on) (Ω)
2
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance
vs. Gate/Source Voltage
10V
0.02
0.01
0
u
Vgs＝1.5V
2.5V
4.5V
0.01
0
2
4
6
8
0
5
10
Gate/Source Voltage:Vgs (V)
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
0.04
Id＝10A
0.03
Vgs＝1.5V
10A
5A
5A
0.02
2.5V
5A,10A
0.01
4.5A
0
-60
20
25
30
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Pulse Test
0.05
15
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
Drain/Source On-State Resistance
:Rds (on) (Ω)
-55 ℃
Vds=10V, Id=1mA
1
0.5
0
-0.5
-1
-30
0
30
60
90
120
Ambient Temperature:Topr (:)
150
-60
-30
0
30
60
90
120
150
Ambient Temperature:Topr (:)
347
XP131A0616SR
Power MOSFET
■ Electrical Characteristics
Drain/Source Voltage vs. Capacitance
Vgs=0V, f=1MHz
Vgs=5V, Vdd≒10V, PW=10µsec. duty≦1%
1000
Switching Time:t (ns)
10000
Capacitance:Ciss, Coss, Crss (pF)
Switching Time vs. Drain Current
Ciss
1000
Coss
tf
td（off）
100
Crss
tr
100
td（on）
10
0
5
10
15
20
0.1
1
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Pulse Test
30
Reverse Drain Current:Id (A)
Gate/Source Voltage:Vgs (V)
Reverse Drain Current vs. Source/Drain Voltage
Vds=10V, Id=10A
5
u
10
4
3
2
1
0
25
Vgs＝4.5V
20
2.5V
15
1.5V
10
0,-4.5V
5
0
0
10
20
30
40
50
0
Gate Charge:Qg (nc)
0.2
0.4
0.6
0.8
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance:γs(t)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
Pulse Width:PW (sec)
348
1
10
100
1