HITACHI 2SK974

2SK974 L , 2SK974 S
Silicon N-Channel MOS FET
Application
4
DPAK-1
High speed power switching
4
Features
12
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
2, 4
3
12
S type
3
L type
1. Gate
2. Drain
3. Source
4. Drain
1
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
3
A
———————————————————————————————————————————
Drain peak current
ID(peak)*
12
A
———————————————————————————————————————————
Body to drain diode reverse drain current
IDR
3
A
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
**
PW ≤ 10 µs, duty cycle ≤ 1 %
Value at TC = 25 °C
2SK974 L , 2SK974 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
100
µA
VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.15
0.18
Ω
ID = 2 A, VGS = 10 V *
———————
——————————–
0.20
ID = 2 A, VGS = 4 V *
0.25
———————————————————————————————————————————
Forward transfer admittance
|yfs|
2.4
4.0
—
S
ID = 2 A, VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
400
—
pF
VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance
Coss
—
230
—
pF
f = 1 MHz
————————————————————————————————
Reverse transfer capacitance
Crss
—
60
—
pF
———————————————————————————————————————————
Turn-on delay time
td(on)
—
5
—
ns
————————————————————————————————
Rise time
tr
—
25
—
ns
ID = 2 A, VGS = 10 V,
RL = 15 Ω
————————————————————————————————
Turn-off delay time
td(off)
—
180
—
ns
————————————————————————————————
Fall time
tf
—
75
—
ns
———————————————————————————————————————————
Body to drain diode forward
voltage
VDF
—
0.9
—
V
IF = 3 A, VGS = 0
———————————————————————————————————————————
Body to drain diode reverse
recovery time
trr
—
85
—
ns
IF = 3 A, VGS = 0,
diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
2SK974 L , 2SK974 S
Maximum Safe Operation Area
Power vs. Temperature Derating
100
a
20
10
10
3
0
50
100
Case Temperature TC (°C)
150
Pulse Test
8
6
4
2
3V
2.5 V
10
0
=
DC
10
µs
m
Op s (1
e
(T rat Sho
C = ion t)
25
°C
)
Typical Transfer Characteristics
5V
4V
3.5 V
PW
10
Drain Current ID (A)
Drain Current ID (A)
8
10 V
Ta = 25°C
10 µs
0.1
0.1 0.3
30
100
1.0
3
10
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10
is )
th (on
in DS
n R
tio
ra d by
e
p
O mite
li
1.0
0.3
is
e
ar
s
m
Drain Current ID (A)
30
1
Channel Dissipation Pch (W)
30
VDS = 10 V
Pulse Test
6
4
2
75°C
–25°C
TC= 25°C
VGS = 2 V
0
6
2
4
8
10
Drain to Source Voltage VDS (V)
0
3
1
2
4
Gate to Source Voltage VGS (V)
5
2SK974 L , 2SK974 S
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
VDS (on) (V)
1.0
Pulse Test
0.8
5A
0.6
0.4
2A
ID = 1 A
0.2
0
6
2
4
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
2
1.0
0.5
Forward Transfer Admittance  yfs  (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
0.2
Pulse Test
ID = 5 A
1 A, 2 A
VGS = 4 V
5A
1 A, 2 A
0.1
0
–40
VGS = 10 V
0
40
120
80
Case Temperature TC (°C)
10 V
0.1
0.05
0.2
0.5
1.0 2
5
10
Drain Current ID (A)
20
Forward Transfer Admittance
vs. Drain Current
0.4
0.3
VGS = 4 V
0.2
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
160
10
VDS = 10 V
5 Pulse Test
2
–25°C
TC = 25°C
75°C
1.0
0.5
0.2
0.1
0.05
0.1
2
0.2
0.5 1.0
Drain Current ID (A)
5
2SK974 L , 2SK974 S
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
10000
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
VGS = 0
f = 1 MHz
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
10
1000
Ciss
300
Coss
100
Crss
30
10
5
0.2
0.5 1.0
2
5
10
Reverse Drain Current IDR (A)
0
20
Switching Characteristics
80
16
25 V
60
40
VDD = 50 V
20
25 V
10 V
0
12
10 V
VDS
4
VGS
ID = 3 A
8
12
16
Gate Charge Qg (nc)
8
4
0
20
500
td (off)
200
Switching Time t (ns)
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
100
VDD = 50 V
10
20
30
40
50
Drain to Source Voltage VDS (V)
100
tf
50 VGS = 10 V
PW = 2 µs, duty < 1 %
tr
20
10
5
0.1
td (on)
0.2
0.5 1.0
2
Drain Current ID (A)
5
10
2SK974 L , 2SK974 S
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
10
Pulse Test
8
6
10 V
15 V
4
5V
2
VGS = 0, –5 V
0.8
0.4
1.2
2.0
1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γs (t)
0
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
0.1
0.05
0.02
θch–c (t) = γs (t) · θch–c
θch–c = 6.25°C/W, TC = 25°C
0.1
0.03
0.01
10 µ
PDM
lse
0.01 ot Pu
h
1S
100µ
D =PW
T
PW
T
1m
10 m
Pulse Width PW (s)
100 m
1
10
2SK974 L , 2SK974 S
Switching Time Test Circuit
Wavewforms
Vin Monitor
90 %
Vout Monitor
D.U.T
RL
Vin
Vout
10 %
10 %
10 %
50 Ω
Vin = 10 V
. 30 V
VDD =
.
td (on)
90 %
tr
90 %
td (off)
tf