TOREX 0785_XP161A1355PR

Power MOS FET
◆N-Channel Power MOS FET
■Applications
◆DMOS Structure
●Notebook PCs
◆Low On-State Resistance : 0.05Ω (max)
●Cellular and portable phones
◆Ultra High-Speed Switching
◆SOT-89 Package
●On-board power supplies
●Li-ion battery systems
◆Gate Protect Diode Built-in
■General Description
■Features
The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.05Ω ( Vgs = 4.5V )
: Rds (on) = 0.07Ω ( Vgs = 2.5V )
: Rds (on) = 0.15Ω ( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage
: 1.5V
High density mounting : SOT-89
■Pin Configuration
1
G
２
D
３
S
SOT-89
（TOP VIEW）
11
■Equivalent Circuit
■Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
G
Gate
2
D
Drain
3
S
Source
■Absolute Maximum Ratings
Ta=25 C
O
1
２
３
PARAMETER
SYMBOL
RATINGS
UNITS
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Vdss
Vgss
Id
20
±8
4
V
V
A
Idp
Idr
Pd
16
4
2
A
A
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
- 55 ~ 150
Power Dissipation (note)
N-Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
846
O
C
O
C
XP161A1355PR
■Electrical Characteristics
DC Characteristics
PARAMETER
SYMBOL
Drain Cut-off Current
Gate-Source Leakage Current
Idss
Igss
Vds = 20V , Vgs = 0V
Vgs = ± 8V , Vds = 0V
Gate-Source Cut-off Voltage
Vgs (off )
Id = 1mA , Vds = 10V
Drain-Source On-state Resistance
Rds ( on )
Id = 2A , Vgs = 4.5V
Body Drain Diode
Forward Voltage
MIN
TYP
0.5
MAX
Ta=25°C
UNITS
10
µA
± 10
µA
1.2
V
0.05
0.07
Ω
Id = 2A , Vgs = 2.5V
0.37
0.05
Id = 0.5A , Vgs = 1.5V
0.1
0.15
Ω
| Yfs |
Id = 2A , Vds = 10V
10
Vf
If = 4A , Vgs = 0V
0.85
1.1
V
TYP
MAX
Ta=25°C
UNITS
( note )
Forward Transfer Admittance
( note )
CONDITIONS
Ω
S
( note ) : Effective during pulse test.
Dynamic Characteristics
PARAMETER
SYMBOL
Input Capacitance
Ciss
Output Capacitance
Coss
Feedback Capacitance
Crss
CONDITIONS
MIN
Vds = 10V , Vgs = 0V
f = 1 MHz
390
pF
210
pF
pF
90
Switching Characteristics
PARAMETER
SYMBOL
Turn-on Delay Time
td ( on )
Rise Time
Turn-off Delay Time
tr
td ( off )
Fall Time
tf
CONDITIONS
MIN
TYP
MAX
Ta=25°C
UNITS
10
ns
Vgs = 5V , Id = 2A
15
ns
Vdd = 10V
85
ns
45
ns
11
Thermal Characteristics
PARAMETER
Thermal Resistance
( channel-ambience )
SYMBOL
CONDITIONS
Rth ( ch-a )
Implement on a ceramic PCB
MIN
TYP
62.5
MAX
UNITS
°C / W
847
XP161A1355PR
■Typical Performance Characteristics
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Ta=25℃, Pulse Test
5V, 4.5V
14
12
Drain Current:Id (A)
14
3.5V
3V
4V
Vds=10V, Pulse Test
16
2.5V
2V
12
Drain Current:Id (A)
16
10
8
6
1.5V
4
25℃
Ta=-55℃
10
125℃
8
6
4
2
2
Vgs=1V
0
0
0
0.5
1
1.5
2
2.5
0
3
Ta=25℃, Pulse Test
0.12
0.09
Id=4A
2A
0.03
0
0
2
4
6
2.5V
4.5V
0.01
0
5
Id=2A
Vgs=1.5V
0.5A
0.09
2A, 4A
2.5V
2A, 4A
0.03
0
-50
4.5V
0
50
100
Ambient Temp.:Topr (℃)
848
10
15
20
Drain Current:Id (A)
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Pulse Test
0.06
3
0.1
8
150
Vds=10V, Id=1mA
0.4
Gate-Source Cut-Off Voltage Variance
:Vgs(off) Variance (V)
Drain-Source On-State Resistance
:Rds(on) (Ω)
0.12
2.5
Vgs=1.5V
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
0.15
2
Ta=25℃, Pulse Test
1
Gate-Source Voltage:Vgs (V)
11
1.5
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Drain-Source On-State Resistance:Rds(on) (Ω)
Drain-Source On-State Resistance:Rds(on) (Ω)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.06
1
Gate-Source Voltage:Vgs (V)
Drain-Source Voltage:Vds (V)
0.15
0.5
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-50
0
50
100
Ambient Temp.:Topr (℃)
150
XP161A1355PR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
Vgs=0V, f=1MHz, Ta=25℃
1000
Ciss
Coss
Crss
100
Vgs=5V, Vdd≒10V, PW=10μs, duty≤1%, Ta=25℃
1000
Switching Time:t (ns)
10000
Capacitance:C (pF)
SWITCHING TIME vs. DRAIN CURRENT
10
tf
100
td(off)
tr
10
td(on)
1
0
5
10
15
20
0
2
6
8
10
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=10V, Id=4A, Ta=25℃
5
4
Drain Current:Id (A)
Drain-Source Voltage:Vds (V)
Ta=25℃, Pulse Test
16
Reverse Drain Current:Idr (A)
Gate-Source Voltage:Vgs (V)
14
4
3
2
1
0
2.5V
12
4.5V
10
1.5V
8
6
Vgs=0V, -4.5V
4
2
0
0
2
4
6
8
10
0
Gate Charge:Qg (nc)
0.2
0.4
0.6
0.8
1
Source-Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance:γs(t)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a)=62.5℃/W, Implemented on a ceramic PCB
1
Single Pulse
0.1
11
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
849